DE69123813T2 - Bidirektionale Stromabtastung für Leistungsmosfets - Google Patents

Bidirektionale Stromabtastung für Leistungsmosfets

Info

Publication number
DE69123813T2
DE69123813T2 DE69123813T DE69123813T DE69123813T2 DE 69123813 T2 DE69123813 T2 DE 69123813T2 DE 69123813 T DE69123813 T DE 69123813T DE 69123813 T DE69123813 T DE 69123813T DE 69123813 T2 DE69123813 T2 DE 69123813T2
Authority
DE
Germany
Prior art keywords
current sensing
power mosfets
directional current
directional
mosfets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69123813T
Other languages
English (en)
Other versions
DE69123813D1 (de
Inventor
Mansour Izadinia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Application granted granted Critical
Publication of DE69123813D1 publication Critical patent/DE69123813D1/de
Publication of DE69123813T2 publication Critical patent/DE69123813T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P7/00—Arrangements for regulating or controlling the speed or torque of electric DC motors
    • H02P7/03—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors
    • H02P7/04—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors by means of a H-bridge circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Measurement Of Current Or Voltage (AREA)
DE69123813T 1990-10-19 1991-10-08 Bidirektionale Stromabtastung für Leistungsmosfets Expired - Fee Related DE69123813T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/600,040 US5084633A (en) 1990-10-19 1990-10-19 Bidirectional current sensing for power MOSFETS

Publications (2)

Publication Number Publication Date
DE69123813D1 DE69123813D1 (de) 1997-02-06
DE69123813T2 true DE69123813T2 (de) 1997-07-10

Family

ID=24402129

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69123813T Expired - Fee Related DE69123813T2 (de) 1990-10-19 1991-10-08 Bidirektionale Stromabtastung für Leistungsmosfets

Country Status (5)

Country Link
US (1) US5084633A (de)
EP (1) EP0481328B1 (de)
JP (1) JPH04290965A (de)
KR (1) KR0170404B1 (de)
DE (1) DE69123813T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134310A (en) * 1991-01-23 1992-07-28 Ramtron Corporation Current supply circuit for driving high capacitance load in an integrated circuit
US5179292A (en) * 1992-06-05 1993-01-12 Acumos, Inc. CMOS current steering circuit
GB9223219D0 (en) * 1992-11-05 1992-12-16 Smiths Industries Plc Current measurement cricuits
GB2272300B (en) * 1992-11-05 1995-12-13 Smiths Industries Plc Current measurement circuits
US5498984A (en) * 1994-09-30 1996-03-12 Maxim Integrated Products High side, current sense amplifier using a symmetric amplifier
EP0764365A2 (de) * 1995-04-10 1997-03-26 Koninklijke Philips Electronics N.V. Pegelschieber und damit ausgerüsteter treiber für die seite mit den hohen spannungen
DE19706946C2 (de) * 1997-02-21 2000-06-21 Daimler Chrysler Ag Battierüberwachungseinheit
JP4371387B2 (ja) * 1999-10-06 2009-11-25 ローム株式会社 制御駆動回路および制御駆動方法
KR100920424B1 (ko) * 2007-12-31 2009-10-08 한국지질자원연구원 전기비저항탐사 송신전극 자동배전 제어 장치 및 방법
JP2011226886A (ja) * 2010-04-19 2011-11-10 Miyama Electric Co Ltd 電流検出抵抗モジュール
US8836525B2 (en) 2011-06-06 2014-09-16 Lear Corporation Isolated resistive current sensor
US9213351B2 (en) 2013-11-22 2015-12-15 Analog Devices, Inc. Bi-directional current sensor
CN103616916A (zh) * 2013-11-27 2014-03-05 苏州贝克微电子有限公司 一种低电压差稳压器的电压差的电路
US9784785B2 (en) * 2014-12-09 2017-10-10 Asco Power Technologies, L.P. Method of detecting metal oxide varistor (MOV) failure within a surge protection device
TWI585421B (zh) * 2015-05-22 2017-06-01 登騰電子股份有限公司 電流感測模組及應用其之電源轉換裝置與電子裝置
CN116203373B (zh) * 2023-03-03 2023-11-07 中山大学 一种多功能半导体场效应晶体管测试电路与方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2334013C3 (de) * 1973-07-04 1982-10-07 Metabowerke KG Closs, Rauch & Schnizler, 7440 Nürtingen Elektromotorisch angetriebene und mit einer Drehzahlregel- oder Steuerelektronik ausgerüstete Hans- oder Schlagbohrmaschine
JPS55150791A (en) * 1979-05-14 1980-11-22 Hitachi Ltd Motor driving circuit
DE3139545C2 (de) * 1981-10-05 1984-02-02 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur Stromsteuerung eines Gleichstrommotors
US4454454A (en) * 1983-05-13 1984-06-12 Motorola, Inc. MOSFET "H" Switch circuit for a DC motor
YU174183A (en) * 1983-08-23 1986-04-30 Iskra Sozd Elektro Indus Electronic circuit for organizinga the control of a transistor bridge
DE3811799A1 (de) * 1988-04-08 1989-10-19 Siemens Ag Schaltungsanordnung zum bidirektionalen ansteuern von gleichstrommotoren oder gleichstromstellgliedern

Also Published As

Publication number Publication date
EP0481328A3 (en) 1993-08-18
EP0481328B1 (de) 1996-12-27
DE69123813D1 (de) 1997-02-06
US5084633A (en) 1992-01-28
KR920008498A (ko) 1992-05-28
KR0170404B1 (ko) 1999-03-30
JPH04290965A (ja) 1992-10-15
EP0481328A2 (de) 1992-04-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee