DE69119809T2 - Optisches Detektionsverfahren mit verstellbarer Detektionsschwelle - Google Patents

Optisches Detektionsverfahren mit verstellbarer Detektionsschwelle

Info

Publication number
DE69119809T2
DE69119809T2 DE69119809T DE69119809T DE69119809T2 DE 69119809 T2 DE69119809 T2 DE 69119809T2 DE 69119809 T DE69119809 T DE 69119809T DE 69119809 T DE69119809 T DE 69119809T DE 69119809 T2 DE69119809 T2 DE 69119809T2
Authority
DE
Germany
Prior art keywords
adjustable
detection method
threshold
optical
optical detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69119809T
Other languages
English (en)
Other versions
DE69119809D1 (de
Inventor
Pierre Antoine Badoz
Jean-Yves Duboz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Publication of DE69119809D1 publication Critical patent/DE69119809D1/de
Application granted granted Critical
Publication of DE69119809T2 publication Critical patent/DE69119809T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
DE69119809T 1990-03-22 1991-03-20 Optisches Detektionsverfahren mit verstellbarer Detektionsschwelle Expired - Fee Related DE69119809T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9003668A FR2660114B1 (fr) 1990-03-22 1990-03-22 Dispositif de detection optique a seuil de detection variable.

Publications (2)

Publication Number Publication Date
DE69119809D1 DE69119809D1 (de) 1996-07-04
DE69119809T2 true DE69119809T2 (de) 1997-01-02

Family

ID=9394995

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69119809T Expired - Fee Related DE69119809T2 (de) 1990-03-22 1991-03-20 Optisches Detektionsverfahren mit verstellbarer Detektionsschwelle

Country Status (5)

Country Link
US (1) US5140381A (de)
EP (1) EP0448465B1 (de)
JP (1) JPH05322646A (de)
DE (1) DE69119809T2 (de)
FR (1) FR2660114B1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4410799C2 (de) * 1994-03-29 1996-02-08 Forschungszentrum Juelich Gmbh Diode
US5459332A (en) * 1994-03-31 1995-10-17 The United States Of America As Represented By The Secretary Of The Navy Semiconductor photodetector device
US5652435A (en) * 1995-09-01 1997-07-29 The United States Of America As Represented By The Secretary Of The Air Force Vertical structure schottky diode optical detector
DE19948415A1 (de) * 1999-10-07 2001-04-19 Forschungszentrum Juelich Gmbh Verfahren zur Umwandlung von Lichtpulsen in elektrische Signale
FR2805395B1 (fr) * 2000-02-23 2002-05-10 Centre Nat Rech Scient Transistor mos pour circuits a haute densite d'integration
US6710351B2 (en) 2001-09-18 2004-03-23 Euv, Llc EUV mirror based absolute incident flux detector
JP5067710B2 (ja) * 2007-08-09 2012-11-07 ｎｕｓｏｌａ株式会社 光電変換素子及びその製造方法
JP5147935B2 (ja) * 2008-12-10 2013-02-20 ｎｕｓｏｌａ株式会社 薄膜光電変換素子と薄膜光電変換素子の製造方法
EP2839509B1 (de) * 2012-04-19 2020-05-27 Carnegie Mellon University Metall-halbleiter-metall (msm)-heteroübergangsdiode
KR102056522B1 (ko) * 2017-10-13 2019-12-16 건국대학교 산학협력단 빛의 에너지에 따른 세기 추출 방법 및 이를 수행하는 장치들

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2432770A1 (fr) * 1978-08-02 1980-02-29 Commissariat Energie Atomique Generateur photovoltaique
US4903101A (en) * 1988-03-28 1990-02-20 California Institute Of Technology Tunable quantum well infrared detector
US4908686A (en) * 1988-08-01 1990-03-13 California Institute Of Technology Stacked silicide/silicon mid- to long-wavelength infrared detector

Also Published As

Publication number Publication date
US5140381A (en) 1992-08-18
EP0448465A1 (de) 1991-09-25
JPH05322646A (ja) 1993-12-07
EP0448465B1 (de) 1996-05-29
FR2660114B1 (fr) 1997-05-30
DE69119809D1 (de) 1996-07-04
FR2660114A1 (fr) 1991-09-27

Similar Documents

Publication Publication Date Title
DE69322674D1 (de) Optischer Empfänger mit Direkt-Detektion
DE69117731T2 (de) Immunochromatografisches Nachweisverfahren
DE69000367T2 (de) Vorhang mit motorisierter aufwickelvorrichtung.
DE69124842D1 (de) Winkelmesser mit CCD
DE69225096D1 (de) Verzerrungsarme optische Vorrichtung mit Schwelle
DE69109181T2 (de) Gel-Elektrophorese mit Fluoreszenz-Nachweisverfahren.
DE69118597T2 (de) Elektrooptische Vorrichtung
DE69423324T2 (de) Linsenanordnung mit Abstandmesssystem
DE69119809T2 (de) Optisches Detektionsverfahren mit verstellbarer Detektionsschwelle
DE69116707T2 (de) Elektrooptische Vorrichtung
ATE175277T1 (de) Hormonnachweisverfahren
TR25064A (tr) Akrilamit iceren polimerlerin hidroksifenilalkonel lerle peltelestirilmesi
DE69110012T2 (de) Linienerkennungsverfahren.
DE69128005T2 (de) Figurverarbeitungsverfahren
NO921377L (no) Undervannsdeteksjonssystem
DE69128004D1 (de) Figurverarbeitungsverfahren
DE69126950D1 (de) Brennpunktermittlungsvorrichtung
DE69227550D1 (de) Optischer Demodulator
DE69126715T2 (de) Fokussierungs-Erfassungsvorrichtung
DE69026168D1 (de) Lichtdetektionsmethode
DE69126800D1 (de) Gerät zur Fokusdetektion
DE69200585D1 (de) Optische abtastmethode.
KR920013674U (ko) 슬리브 방향 검출장치
DE3888178T2 (de) Optische schwellenwertanordnung und methode.
KR920009907U (ko) 수위감지장치

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee