DE69119446D1 - Dekodierschaltung - Google Patents
DekodierschaltungInfo
- Publication number
- DE69119446D1 DE69119446D1 DE69119446T DE69119446T DE69119446D1 DE 69119446 D1 DE69119446 D1 DE 69119446D1 DE 69119446 T DE69119446 T DE 69119446T DE 69119446 T DE69119446 T DE 69119446T DE 69119446 D1 DE69119446 D1 DE 69119446D1
- Authority
- DE
- Germany
- Prior art keywords
- decoding circuit
- decoding
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M7/00—Conversion of a code where information is represented by a given sequence or number of digits to a code where the same, similar or subset of information is represented by a different sequence or number of digits
- H03M7/02—Conversion to or from weighted codes, i.e. the weight given to a digit depending on the position of the digit within the block or code word
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4506690 | 1990-02-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69119446D1 true DE69119446D1 (de) | 1996-06-20 |
DE69119446T2 DE69119446T2 (de) | 1996-10-31 |
Family
ID=12708979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69119446T Expired - Fee Related DE69119446T2 (de) | 1990-02-26 | 1991-02-26 | Dekodierschaltung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5159215A (de) |
EP (1) | EP0444602B1 (de) |
KR (1) | KR940005515B1 (de) |
DE (1) | DE69119446T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9007790D0 (en) * | 1990-04-06 | 1990-06-06 | Lines Valerie L | Dynamic memory wordline driver scheme |
GB9007791D0 (en) | 1990-04-06 | 1990-06-06 | Foss Richard C | High voltage boosted wordline supply charge pump and regulator for dram |
JP2977321B2 (ja) * | 1991-05-20 | 1999-11-15 | 株式会社東芝 | マルチプレクサ |
US5255224A (en) * | 1991-12-18 | 1993-10-19 | International Business Machines Corporation | Boosted drive system for master/local word line memory architecture |
US5327026A (en) * | 1993-02-17 | 1994-07-05 | United Memories, Inc. | Self-timed bootstrap decoder |
JP2591907B2 (ja) * | 1994-05-24 | 1997-03-19 | 日本電気アイシーマイコンシステム株式会社 | 読み出し専用半導体記憶装置のデコード回路 |
JP4198201B2 (ja) * | 1995-06-02 | 2008-12-17 | 株式会社ルネサステクノロジ | 半導体装置 |
JPH1116365A (ja) * | 1997-06-20 | 1999-01-22 | Oki Micro Design Miyazaki:Kk | アドレスデコーダおよび半導体記憶装置、並びに半導体装置 |
US6137318A (en) * | 1997-12-09 | 2000-10-24 | Oki Electric Industry Co., Ltd. | Logic circuit having dummy MOS transistor |
US7230453B2 (en) * | 2003-12-29 | 2007-06-12 | Stmicroelectronics Pvt. Ltd. | Output buffer providing multiple voltages |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5472691A (en) * | 1977-11-21 | 1979-06-11 | Toshiba Corp | Semiconductor device |
US4618784A (en) * | 1985-01-28 | 1986-10-21 | International Business Machines Corporation | High-performance, high-density CMOS decoder/driver circuit |
US5051959A (en) * | 1985-08-14 | 1991-09-24 | Fujitsu Limited | Complementary semiconductor memory device including cell access transistor and word line driving transistor having channels of different conductivity type |
JPS6238591A (ja) * | 1985-08-14 | 1987-02-19 | Fujitsu Ltd | 相補型の半導体メモリ装置 |
US4760560A (en) * | 1985-08-30 | 1988-07-26 | Kabushiki Kaisha Toshiba | Random access memory with resistance to crystal lattice memory errors |
JPS62229870A (ja) * | 1986-01-22 | 1987-10-08 | Mitsubishi Electric Corp | 半導体集積回路 |
EP0300184B1 (de) * | 1987-06-10 | 1992-08-26 | Siemens Aktiengesellschaft | Schaltungsanordnung in einer integrierten Halbleiterschaltung |
US4918663A (en) * | 1987-09-16 | 1990-04-17 | Motorola, Inc. | Latch-up control for a CMOS memory with a pumped well |
US4843261A (en) * | 1988-02-29 | 1989-06-27 | International Business Machines Corporation | Complementary output, high-density CMOS decoder/driver circuit for semiconductor memories |
JP2547615B2 (ja) * | 1988-06-16 | 1996-10-23 | 三菱電機株式会社 | 読出専用半導体記憶装置および半導体記憶装置 |
-
1991
- 1991-02-26 DE DE69119446T patent/DE69119446T2/de not_active Expired - Fee Related
- 1991-02-26 EP EP91102811A patent/EP0444602B1/de not_active Expired - Lifetime
- 1991-02-26 KR KR1019910003083A patent/KR940005515B1/ko not_active IP Right Cessation
- 1991-02-26 US US07/660,818 patent/US5159215A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0444602A3 (en) | 1992-07-15 |
DE69119446T2 (de) | 1996-10-31 |
KR940005515B1 (ko) | 1994-06-20 |
EP0444602B1 (de) | 1996-05-15 |
EP0444602A2 (de) | 1991-09-04 |
KR920000182A (ko) | 1992-01-10 |
US5159215A (en) | 1992-10-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |