DE69115941D1 - Elektronenwellegekoppelte Halbleiterschaltanordnung - Google Patents

Elektronenwellegekoppelte Halbleiterschaltanordnung

Info

Publication number
DE69115941D1
DE69115941D1 DE69115941T DE69115941T DE69115941D1 DE 69115941 D1 DE69115941 D1 DE 69115941D1 DE 69115941 T DE69115941 T DE 69115941T DE 69115941 T DE69115941 T DE 69115941T DE 69115941 D1 DE69115941 D1 DE 69115941D1
Authority
DE
Germany
Prior art keywords
semiconductor switching
switching arrangement
electron wave
coupled semiconductor
wave coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69115941T
Other languages
English (en)
Other versions
DE69115941T2 (de
Inventor
Noraki Dr Tsukada
Klaus Dr Ploog
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Application granted granted Critical
Publication of DE69115941D1 publication Critical patent/DE69115941D1/de
Publication of DE69115941T2 publication Critical patent/DE69115941T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69115941T 1990-01-23 1991-01-21 Elektronenwellegekoppelte Halbleiterschaltanordnung Expired - Fee Related DE69115941T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP90101333 1990-01-23

Publications (2)

Publication Number Publication Date
DE69115941D1 true DE69115941D1 (de) 1996-02-15
DE69115941T2 DE69115941T2 (de) 1996-05-30

Family

ID=8203527

Family Applications (2)

Application Number Title Priority Date Filing Date
DE4020813A Withdrawn DE4020813A1 (de) 1990-01-23 1990-06-29 Elektronenwellen-gekoppeltes halbleiter-schaltelement
DE69115941T Expired - Fee Related DE69115941T2 (de) 1990-01-23 1991-01-21 Elektronenwellegekoppelte Halbleiterschaltanordnung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE4020813A Withdrawn DE4020813A1 (de) 1990-01-23 1990-06-29 Elektronenwellen-gekoppeltes halbleiter-schaltelement

Country Status (3)

Country Link
US (1) US5148242A (de)
JP (1) JPH04356970A (de)
DE (2) DE4020813A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289014A (en) * 1992-08-17 1994-02-22 Motorola, Inc. Semiconductor device having a vertical quantum well via and method for making
GB9311111D0 (en) * 1993-05-28 1993-07-14 Hitachi Europ Ltd Quantum structure devices
US5459604A (en) * 1994-07-22 1995-10-17 National Research Council Of Canada Coherent switch of currents in semiconductors
US7547907B2 (en) * 2004-12-29 2009-06-16 Intel Corporation Non-blocking switch having carbon nanostructures and Mach-Zehnder interferometer
US7440227B2 (en) * 2005-02-28 2008-10-21 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head having a hall effect sensor and circuit for detecting recorded bits from magnetic recording media
JP2008288346A (ja) * 2007-05-16 2008-11-27 Hiroshima Univ 半導体素子
CN103219944B (zh) * 2013-04-23 2015-09-16 华南师范大学 一种基于低维半导体结构的倍频器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4799091A (en) * 1984-07-02 1989-01-17 Texas Instruments Incorporated Quantum device output switch
US4733282A (en) * 1985-08-13 1988-03-22 International Business Machines Corporation One-dimensional quantum pipeline type carrier path semiconductor devices
US4810664A (en) * 1986-08-14 1989-03-07 Hewlett-Packard Company Method for making patterned implanted buried oxide transistors and structures
JPS63316484A (ja) * 1987-06-19 1988-12-23 Fujitsu Ltd 量子効果半導体装置
NL8703119A (nl) * 1987-12-23 1989-07-17 Philips Nv Element voor toepassing in een elektrische schakeling.
JPH0226077A (ja) * 1988-07-15 1990-01-29 Fujitsu Ltd 半導体機能素子

Also Published As

Publication number Publication date
DE69115941T2 (de) 1996-05-30
US5148242A (en) 1992-09-15
DE4020813A1 (de) 1991-07-25
JPH04356970A (ja) 1992-12-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee