DE69115205D1 - Optisch schaltbare Vorrichtung. - Google Patents
Optisch schaltbare Vorrichtung.Info
- Publication number
- DE69115205D1 DE69115205D1 DE69115205T DE69115205T DE69115205D1 DE 69115205 D1 DE69115205 D1 DE 69115205D1 DE 69115205 T DE69115205 T DE 69115205T DE 69115205 T DE69115205 T DE 69115205T DE 69115205 D1 DE69115205 D1 DE 69115205D1
- Authority
- DE
- Germany
- Prior art keywords
- optically switchable
- switchable device
- optically
- switchable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01716—Optically controlled superlattice or quantum well devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9020733A GB2248117A (en) | 1990-09-24 | 1990-09-24 | An optical device |
GB9022757A GB2248967A (en) | 1990-10-19 | 1990-10-19 | A high mobility semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69115205D1 true DE69115205D1 (de) | 1996-01-18 |
DE69115205T2 DE69115205T2 (de) | 1996-06-27 |
Family
ID=26297691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69115205T Expired - Fee Related DE69115205T2 (de) | 1990-09-24 | 1991-09-18 | Optisch schaltbare Vorrichtung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5119227A (de) |
EP (1) | EP0478060B1 (de) |
JP (1) | JP3260149B2 (de) |
DE (1) | DE69115205T2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5265107A (en) * | 1992-02-05 | 1993-11-23 | Bell Communications Research, Inc. | Broadband absorber having multiple quantum wells of different thicknesses |
US5268785A (en) * | 1993-02-08 | 1993-12-07 | The United States Of America As Represented By The Secretary Of The Army | All-optical switch utilizing inversion of two-level systems |
US5408480A (en) * | 1993-07-15 | 1995-04-18 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Laser with optically driven Q-switch |
FR2713788B1 (fr) * | 1993-12-09 | 1996-03-01 | France Telecom | Opérateur optique à hétérostructure à puits quantiques. |
DE69428187T2 (de) * | 1994-05-06 | 2002-06-20 | Commissariat Energie Atomique | Optisch gesteuerte Lichtmodulator-Vorrichtung |
US5615143A (en) * | 1994-09-19 | 1997-03-25 | Cornell Research Foundation, Inc. | Optomechanical terabit data storage system |
US5963358A (en) * | 1995-04-26 | 1999-10-05 | Kabushiki Kaisha Toshiba | Semiconductor device and method for its operation |
GB2306692B (en) * | 1995-10-27 | 1998-01-07 | Toshiba Cambridge Res Center | Optically activated semiconductor devices |
FR2734920B1 (fr) * | 1995-05-29 | 1997-07-11 | Alcatel Nv | Procede et dispositif pour combiner des signaux optiques |
JPH09326528A (ja) * | 1996-06-05 | 1997-12-16 | Kokusai Denshin Denwa Co Ltd <Kdd> | 短光パルス波形整形装置 |
JPH11194374A (ja) * | 1998-01-07 | 1999-07-21 | Kdd | 光処理装置 |
FR2780203B1 (fr) * | 1998-06-23 | 2003-07-04 | Thomson Csf | Detecteur a puits quantique avec couche de stockage des electrons photoexcites |
GB0111822D0 (en) * | 2001-05-15 | 2001-07-04 | Marconi Comm Ltd | Signal addition to a wave division multiplex system |
US6462865B1 (en) | 2001-06-29 | 2002-10-08 | Super Light Wave Corp. | All-optical logic with wired-OR multi-mode-interference combiners and semiconductor-optical-amplifier inverters |
US7341142B2 (en) * | 2001-11-09 | 2008-03-11 | Cabot Corporation | Elastomer composite materials in low density forms and methods |
US7417788B2 (en) * | 2005-11-21 | 2008-08-26 | Aditya Narendra Joshi | Optical logic device |
WO2008011445A1 (en) * | 2006-07-18 | 2008-01-24 | Raytheon Company | Optical digital to analog converter |
KR101133154B1 (ko) | 2011-02-03 | 2012-04-06 | 디지털옵틱스 코포레이션 이스트 | 상이한 파장을 균일하게 수광하기 위한 차등 높이 실리콘을 포함하는 이면 조사 센서 패키지 |
KR101095945B1 (ko) | 2011-02-03 | 2011-12-19 | 테쎄라 노쓰 아메리카, 아이엔씨. | 상이한 파장을 균일하게 수광하기 위한 흡광 재료를 포함하는 이면 조사 센서 패키지 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4163237A (en) * | 1978-04-24 | 1979-07-31 | Bell Telephone Laboratories, Incorporated | High mobility multilayered heterojunction devices employing modulated doping |
US4705361A (en) * | 1985-11-27 | 1987-11-10 | Texas Instruments Incorporated | Spatial light modulator |
JPS6371826A (ja) * | 1986-09-16 | 1988-04-01 | Hitachi Ltd | 光半導体装置 |
JPH0721594B2 (ja) * | 1987-01-19 | 1995-03-08 | 国際電信電話株式会社 | 光スイツチ |
FR2637092B1 (fr) * | 1988-05-11 | 1991-04-12 | Thomson Csf | Modulateur d'onde electromagnetique a puits quantiques couples, et application a un detecteur d'onde electromagnetique |
EP0358229B1 (de) * | 1988-09-09 | 1996-03-06 | Fujitsu Limited | Optische Halbleitervorrichtung mit nichtlinearer Betriebscharakteristik |
US5047810A (en) * | 1989-01-09 | 1991-09-10 | At&T Bell Laboratories | Optically controlled resonant tunneling electronic devices |
-
1991
- 1991-09-18 DE DE69115205T patent/DE69115205T2/de not_active Expired - Fee Related
- 1991-09-18 EP EP91202393A patent/EP0478060B1/de not_active Expired - Lifetime
- 1991-09-23 US US07/764,670 patent/US5119227A/en not_active Expired - Lifetime
- 1991-09-24 JP JP24365291A patent/JP3260149B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0478060B1 (de) | 1995-12-06 |
DE69115205T2 (de) | 1996-06-27 |
EP0478060A3 (en) | 1992-07-01 |
US5119227A (en) | 1992-06-02 |
JP3260149B2 (ja) | 2002-02-25 |
JPH04234171A (ja) | 1992-08-21 |
EP0478060A2 (de) | 1992-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8339 | Ceased/non-payment of the annual fee |