DE69107038D1 - Vorrichtung und Tiegel zur Abscheidung aus der Gasphase. - Google Patents
Vorrichtung und Tiegel zur Abscheidung aus der Gasphase.Info
- Publication number
- DE69107038D1 DE69107038D1 DE69107038T DE69107038T DE69107038D1 DE 69107038 D1 DE69107038 D1 DE 69107038D1 DE 69107038 T DE69107038 T DE 69107038T DE 69107038 T DE69107038 T DE 69107038T DE 69107038 D1 DE69107038 D1 DE 69107038D1
- Authority
- DE
- Germany
- Prior art keywords
- compartments
- crucible
- diffusers
- compartment
- separation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/08—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions in conditions of zero-gravity or low gravity
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9015368A FR2670219B1 (fr) | 1990-12-07 | 1990-12-07 | Appareil et creuset pour depot en phase vapeur. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69107038D1 true DE69107038D1 (de) | 1995-03-09 |
DE69107038T2 DE69107038T2 (de) | 1995-06-22 |
Family
ID=9403020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69107038T Expired - Fee Related DE69107038T2 (de) | 1990-12-07 | 1991-11-29 | Vorrichtung und Tiegel zur Abscheidung aus der Gasphase. |
Country Status (9)
Country | Link |
---|---|
US (1) | US5140939A (de) |
EP (1) | EP0490727B1 (de) |
JP (1) | JPH04293768A (de) |
AT (1) | ATE117736T1 (de) |
CA (1) | CA2056816A1 (de) |
DE (1) | DE69107038T2 (de) |
ES (1) | ES2070463T3 (de) |
FR (1) | FR2670219B1 (de) |
IE (1) | IE914131A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0421780A (ja) * | 1990-05-14 | 1992-01-24 | Sharp Corp | 気相成長装置 |
US5253266A (en) * | 1992-07-20 | 1993-10-12 | Intevac, Inc. | MBE effusion source with asymmetrical heaters |
KR100401544B1 (ko) | 2001-02-06 | 2003-10-17 | 삼성전자주식회사 | 반도체 공정에 사용되는 가스를 제공하는 방법 및 장치그리고 이를 갖는 가공 장치 |
KR100754404B1 (ko) * | 2006-05-25 | 2007-08-31 | 삼성전자주식회사 | 확산튜브와, 확산공정용 도펀트 소스 및 상기 확산튜브와도펀트 소스를 이용한 확산방법 |
CN108004512A (zh) * | 2018-01-17 | 2018-05-08 | 京东方科技集团股份有限公司 | 一种蒸发源以及蒸镀装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1112044B (de) * | 1959-12-05 | 1961-08-03 | Akad Wissenschaften Ddr | Verfahren und Vorrichtung zur Gewinnung von Kristallen aus der Dampfphase |
US3343518A (en) * | 1964-09-30 | 1967-09-26 | Hayes Inc C I | High temperature furnace |
US3828722A (en) * | 1970-05-01 | 1974-08-13 | Cogar Corp | Apparatus for producing ion-free insulating layers |
US3632429A (en) * | 1970-06-30 | 1972-01-04 | Matsushita Electric Ind Co Ltd | Method for making metal oxide film resistors |
DE2033444C3 (de) * | 1970-07-06 | 1979-02-15 | Siemens Ag | Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial |
AU485215B2 (en) * | 1973-11-28 | 1976-05-20 | Unisearch Limited | Method for vapour growing crystals |
US4211182A (en) * | 1978-05-05 | 1980-07-08 | Rca Corporation | Diffusion apparatus |
US4204893A (en) * | 1979-02-16 | 1980-05-27 | Bell Telephone Laboratories, Incorporated | Process for depositing chrome doped epitaxial layers of gallium arsenide utilizing a preliminary formed chemical vapor-deposited chromium oxide dopant source |
JPS62153192A (ja) * | 1985-12-26 | 1987-07-08 | Sharp Corp | 化合物半導体の結晶成長方法 |
-
1990
- 1990-12-07 FR FR9015368A patent/FR2670219B1/fr not_active Expired - Fee Related
-
1991
- 1991-11-27 IE IE413191A patent/IE914131A1/en unknown
- 1991-11-29 AT AT91403232T patent/ATE117736T1/de not_active IP Right Cessation
- 1991-11-29 EP EP91403232A patent/EP0490727B1/de not_active Expired - Lifetime
- 1991-11-29 ES ES91403232T patent/ES2070463T3/es not_active Expired - Lifetime
- 1991-11-29 DE DE69107038T patent/DE69107038T2/de not_active Expired - Fee Related
- 1991-12-02 CA CA002056816A patent/CA2056816A1/en not_active Abandoned
- 1991-12-03 US US07/802,085 patent/US5140939A/en not_active Expired - Fee Related
- 1991-12-06 JP JP3323399A patent/JPH04293768A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0490727B1 (de) | 1995-01-25 |
JPH04293768A (ja) | 1992-10-19 |
ATE117736T1 (de) | 1995-02-15 |
FR2670219B1 (fr) | 1993-03-19 |
ES2070463T3 (es) | 1995-06-01 |
CA2056816A1 (en) | 1992-06-08 |
DE69107038T2 (de) | 1995-06-22 |
EP0490727A1 (de) | 1992-06-17 |
US5140939A (en) | 1992-08-25 |
IE914131A1 (en) | 1992-06-17 |
FR2670219A1 (fr) | 1992-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TR26217A (tr) | GAZ üRETME MADDELERINDEN GAZ üRETILMESI ICIN VE VEYA BIR GAZIN ISLAH EDILMESI ICIN ISLEM VE AYGIT VE BU ISLEMIN GERCEKLESTIRILMESI ICIN YüKSEK SICAKLIK ISI ESANJÖRü. | |
FR2631165B1 (fr) | Support conditionneur de temperature pour petits objets tels que des composants semi-conducteurs et procede de regulation thermique utilisant ce support | |
ES535550A0 (es) | Aparato para deposicion quimica de vapor | |
DE59814433D1 (de) | Thermopile-Sensor und Strahlungsthermometer mit einem Thermopile-Sensor | |
ATE103062T1 (de) | Verfahren und vorrichtung zur schnellregulierung einer wandtemperatur. | |
SE7606679L (sv) | Sett och anordning for kylning | |
BR9506833A (pt) | Resfriador refratário interno | |
DE69107038D1 (de) | Vorrichtung und Tiegel zur Abscheidung aus der Gasphase. | |
NL184429C (nl) | Inrichting voor het koelen van hoogovengas. | |
ATE121556T1 (de) | Tiefkühlbarer elektrischer hohlleiter. | |
IT7924578A0 (it) | Dispositivo di raffreddamento per gas caldi in condotte, in particolare di forni. | |
FR2671628B1 (fr) | Appareil pour mesurer la temperature de chauffage dans un champ electrique intense de micro-ondes. | |
DE69409950T2 (de) | Wärmeverteilvorrichtung für gasgrill | |
IL31844A (en) | Process for the cooling of cleavage-gas or synthesised gas and similar gases as well as heat exchanger for carrying out this process | |
NO152883C (no) | Hoeytemperaturbrenner og fremgangsmaate ved drift av saadan. | |
DE69115854D1 (de) | Rost zur thermischen Behandlung mit hoher Temperatur | |
FR2508064B1 (fr) | Procede de degraissage d'une bande laminee a froid | |
FI882207A (fi) | Haollarelement av grafit foer uppvaermningsstavar i industriugnar. | |
ATE75182T1 (de) | Kuehlungs- oder heizungsvorrichtung fuer z.b. gasleitungen. | |
FR2860862B1 (fr) | Procede de traitement thermique d'une serie d'objets et appareil associe | |
JPS5394872A (en) | Fixing supporter for molecule beam evaporation source cell | |
KR920012920U (ko) | 금속열처리 시편의 재사용이 가능한 내부온도 측정장치 | |
IT1183148B (it) | Dispositivo di isolamento termico, particolarmente applicabile a complessi di regolazione e comando degli apparecchi di cottura | |
ATE184695T1 (de) | Vorrichtung zum festlegen von rohrleitungen | |
PL201219A1 (pl) | Urzadzenie do regulacji temperatury przy podgrzewaniu lub chlodzeniu cieczy i gazow |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: SOCIETE NATIONALE D'ETUDE ET DE CONSTRUCTION DE MO |
|
8339 | Ceased/non-payment of the annual fee |