DE69104918D1 - Verfahren zur Herstellung eines Verbundkörpers auf der Basis von Siliziumcarbid. - Google Patents

Verfahren zur Herstellung eines Verbundkörpers auf der Basis von Siliziumcarbid.

Info

Publication number
DE69104918D1
DE69104918D1 DE69104918T DE69104918T DE69104918D1 DE 69104918 D1 DE69104918 D1 DE 69104918D1 DE 69104918 T DE69104918 T DE 69104918T DE 69104918 T DE69104918 T DE 69104918T DE 69104918 D1 DE69104918 D1 DE 69104918D1
Authority
DE
Germany
Prior art keywords
producing
silicon carbide
composite body
body based
composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69104918T
Other languages
English (en)
Other versions
DE69104918T2 (de
Inventor
Tadahisa Arahori
Shigetoshi Hayashi
Kazuhiro Minagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2183641A external-priority patent/JPH0474734A/ja
Priority claimed from JP2251223A external-priority patent/JPH04130060A/ja
Priority claimed from JP2251222A external-priority patent/JPH04130059A/ja
Priority claimed from JP26159990A external-priority patent/JPH04139033A/ja
Priority claimed from JP2271669A external-priority patent/JPH04149017A/ja
Priority claimed from JP9118091A external-priority patent/JPH0532462A/ja
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Application granted granted Critical
Publication of DE69104918D1 publication Critical patent/DE69104918D1/de
Publication of DE69104918T2 publication Critical patent/DE69104918T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)
DE69104918T 1990-07-10 1991-07-09 Verfahren zur Herstellung eines Verbundkörpers auf der Basis von Siliziumcarbid. Expired - Fee Related DE69104918T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2183641A JPH0474734A (ja) 1990-07-10 1990-07-10 ＳｉＯ↓２―Ｃ複合材および炭化珪素の製造方法
JP2251223A JPH04130060A (ja) 1990-09-19 1990-09-19 炭化珪素質材料の製造方法
JP2251222A JPH04130059A (ja) 1990-09-19 1990-09-19 炭化珪素質管および二酸化珪素―炭化珪素の複合体管の製造方法
JP26159990A JPH04139033A (ja) 1990-09-28 1990-09-28 ＳｉＯ↓２―Ｃ複合材およびＳｉＯ↓２―ＳｉＣ複合材の製造方法
JP2271669A JPH04149017A (ja) 1990-10-09 1990-10-09 炭化珪素粉末及びその製造方法
JP9118091A JPH0532462A (ja) 1991-02-08 1991-02-08 接合形成される炭化珪素質成形体の製造方法

Publications (2)

Publication Number Publication Date
DE69104918D1 true DE69104918D1 (de) 1994-12-08
DE69104918T2 DE69104918T2 (de) 1995-06-08

Family

ID=27548766

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69104918T Expired - Fee Related DE69104918T2 (de) 1990-07-10 1991-07-09 Verfahren zur Herstellung eines Verbundkörpers auf der Basis von Siliziumcarbid.

Country Status (3)

Country Link
US (1) US5380511A (de)
EP (1) EP0466109B1 (de)
DE (1) DE69104918T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5529949A (en) * 1994-03-17 1996-06-25 Kent State University Process of making thin film 2H α-sic by laser ablation
JPH09268067A (ja) * 1996-03-29 1997-10-14 Asahi Glass Co Ltd 炭化ケイ素部材の製造方法
US5942454A (en) * 1996-08-27 1999-08-24 Asahi Glass Company Ltd. Highly corrosion-resistant silicon carbide product
US6858526B2 (en) * 1998-07-14 2005-02-22 Micron Technology, Inc. Methods of forming materials between conductive electrical components, and insulating materials
US6333556B1 (en) * 1997-10-09 2001-12-25 Micron Technology, Inc. Insulating materials
US6350679B1 (en) * 1999-08-03 2002-02-26 Micron Technology, Inc. Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry
US6455395B1 (en) * 2000-06-30 2002-09-24 Integrated Materials, Inc. Method of fabricating silicon structures including fixtures for supporting wafers
US7767021B2 (en) * 2005-09-29 2010-08-03 Neosemitech Corporation Growing method of SiC single crystal
US20100310952A1 (en) * 2006-05-10 2010-12-09 Sincono Ag Oil-bearing sands and shales and their mixtures as starting substances for producing silicon nitride and/or silicon carbide
US20070264183A1 (en) * 2006-05-10 2007-11-15 Sincono Ag Oil-bearing sands and shales and their mixtures as starting substances for binding or decomposing carbon dioxide and nox, and for preparing crystalline silicon and hydrogen gas, and for producing nitride, silicon carbide, and silanes
DE202014007322U1 (de) * 2014-09-08 2015-12-09 Innovative ThermoAnalytic Instruments KG Heizhaubenvorrichtung mit neuartiger Anordnung der Heizeinrichtung
CN114149007B (zh) * 2020-09-04 2023-06-30 中国科学院过程工程研究所 一种碳化硅的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
JPS5673615A (en) * 1979-11-14 1981-06-18 Toshiba Corp Manufacture of silicon carbide
US4456634A (en) * 1980-06-16 1984-06-26 United Technologies Corporation Reaction sintered silicon carbide
DE3337949C1 (de) * 1983-10-19 1985-04-18 Hutschenreuther Ag, 8672 Selb Verfahren zum Herstellen von SiC-Fasern und Fasergebilden
JPS616109A (ja) * 1984-06-20 1986-01-11 Kawasaki Steel Corp ｓｉｃの製造法
JPH01141812A (ja) * 1987-11-27 1989-06-02 Kawasaki Steel Corp 炭素系微小中空体の製造方法

Also Published As

Publication number Publication date
US5380511A (en) 1995-01-10
EP0466109B1 (de) 1994-11-02
DE69104918T2 (de) 1995-06-08
EP0466109A1 (de) 1992-01-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee