DE69104763D1 - Nach oben abstrahlende, oberflächenemittierende Laserstrukturen. - Google Patents

Nach oben abstrahlende, oberflächenemittierende Laserstrukturen.

Info

Publication number
DE69104763D1
DE69104763D1 DE69104763T DE69104763T DE69104763D1 DE 69104763 D1 DE69104763 D1 DE 69104763D1 DE 69104763 T DE69104763 T DE 69104763T DE 69104763 T DE69104763 T DE 69104763T DE 69104763 D1 DE69104763 D1 DE 69104763D1
Authority
DE
Germany
Prior art keywords
radiating
upward
emitting laser
laser structures
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69104763T
Other languages
English (en)
Other versions
DE69104763T2 (de
Inventor
Yong H Lee
Benjamin Tell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69104763D1 publication Critical patent/DE69104763D1/de
Publication of DE69104763T2 publication Critical patent/DE69104763T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE69104763T 1990-04-13 1991-04-03 Nach oben abstrahlende, oberflächenemittierende Laserstrukturen. Expired - Lifetime DE69104763T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/509,653 US5115442A (en) 1990-04-13 1990-04-13 Top-emitting surface emitting laser structures

Publications (2)

Publication Number Publication Date
DE69104763D1 true DE69104763D1 (de) 1994-12-01
DE69104763T2 DE69104763T2 (de) 1995-03-02

Family

ID=24027564

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69104763T Expired - Lifetime DE69104763T2 (de) 1990-04-13 1991-04-03 Nach oben abstrahlende, oberflächenemittierende Laserstrukturen.

Country Status (8)

Country Link
US (1) US5115442A (de)
EP (1) EP0452032B1 (de)
JP (1) JP3289920B2 (de)
KR (1) KR100195767B1 (de)
CA (1) CA2037013C (de)
DE (1) DE69104763T2 (de)
HK (1) HK193595A (de)
SG (1) SG31295G (de)

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* Cited by examiner, † Cited by third party
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US5212701A (en) * 1992-03-25 1993-05-18 At&T Bell Laboratories Semiconductor surface emitting laser having enhanced optical confinement
US5274655A (en) * 1992-03-26 1993-12-28 Motorola, Inc. Temperature insensitive vertical cavity surface emitting laser
US5223704A (en) * 1992-03-31 1993-06-29 At&T Bell Laboratories Planar buried quantum well photodetector
US5245622A (en) * 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
US5343487A (en) * 1992-10-01 1994-08-30 Optical Concepts, Inc. Electrical pumping scheme for vertical-cavity surface-emitting lasers
US5567646A (en) * 1992-12-28 1996-10-22 Philips Electronics North America Corporation Method of making a stripe-geometry II/VI semiconductor gain-guided injection laser structure using ion implantation
JPH07118570B2 (ja) * 1993-02-01 1995-12-18 日本電気株式会社 面発光素子およびその製造方法
US5337327A (en) * 1993-02-22 1994-08-09 Motorola, Inc. VCSEL with lateral index guide
US5331654A (en) * 1993-03-05 1994-07-19 Photonics Research Incorporated Polarized surface-emitting laser
US6156582A (en) * 1993-06-14 2000-12-05 Motorola, Inc. Method of fabricating top emitting ridge VCSEL with self-aligned contact and sidewall reflector
JP3323324B2 (ja) * 1993-06-18 2002-09-09 株式会社リコー 発光ダイオードおよび発光ダイオードアレイ
SE501723C2 (sv) * 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Optisk förstärkningsanordning samt användning av anordningen
SE501722C2 (sv) * 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Ytemitterande laseranordning med vertikal kavitet
GB2283612B (en) * 1993-10-27 1997-07-30 Toshiba Cambridge Res Center Semiconductor laser device
US5412680A (en) * 1994-03-18 1995-05-02 Photonics Research Incorporated Linear polarization of semiconductor laser
US5606572A (en) * 1994-03-24 1997-02-25 Vixel Corporation Integration of laser with photodiode for feedback control
US5653892A (en) * 1994-04-04 1997-08-05 Texas Instruments Incorporated Etching of ceramic materials with an elevated thin film
US5679267A (en) * 1994-04-04 1997-10-21 Texas Instruments Incorporated Dual etching of ceramic materials with an elevated thin film
FR2724056B1 (fr) * 1994-08-23 1996-11-15 France Telecom Composant optique, optoelectronique ou photonique comportant au moins une cavite optique confinee lateralement et procede pour sa realisation
US5627854A (en) * 1995-03-15 1997-05-06 Lucent Technologies Inc. Saturable bragg reflector
US5568499A (en) * 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors
US5513204A (en) * 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
US5574738A (en) * 1995-06-07 1996-11-12 Honeywell Inc. Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser
US5978401A (en) * 1995-10-25 1999-11-02 Honeywell Inc. Monolithic vertical cavity surface emitting laser and resonant cavity photodetector transceiver
US5719891A (en) * 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
KR0178492B1 (ko) * 1995-12-21 1999-04-15 양승택 기울어진 공진기로 편광특성이 제어된 표면방출 레이저 다이오드 제조방법
US5748665A (en) * 1996-01-16 1998-05-05 Motorola, Inc. Visible VCSEL with hybrid mirrors
US5940422A (en) * 1996-06-28 1999-08-17 Honeywell Inc. Laser with an improved mode control
US5764674A (en) * 1996-06-28 1998-06-09 Honeywell Inc. Current confinement for a vertical cavity surface emitting laser
US5745515A (en) * 1996-07-18 1998-04-28 Honeywell Inc. Self-limiting intrinsically eye-safe laser utilizing an increasing absorption layer
US5812581A (en) * 1996-07-26 1998-09-22 Honeywell Inc. Lens for a semiconductive device with a laser and a photodetector in a common container
US5799030A (en) * 1996-07-26 1998-08-25 Honeywell Inc. Semiconductor device with a laser and a photodetector in a common container
US5774487A (en) * 1996-10-16 1998-06-30 Honeywell Inc. Filamented multi-wavelength vertical-cavity surface emitting laser
KR100243656B1 (ko) * 1996-12-05 2000-02-01 정선종 수소화된 수직공진형 표면방출 레이저 및 그 제조방법
JPH10200204A (ja) 1997-01-06 1998-07-31 Fuji Xerox Co Ltd 面発光型半導体レーザ、その製造方法およびこれを用いた面発光型半導体レーザアレイ
US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
US5903588A (en) * 1997-03-06 1999-05-11 Honeywell Inc. Laser with a selectively changed current confining layer
US6055262A (en) * 1997-06-11 2000-04-25 Honeywell Inc. Resonant reflector for improved optoelectronic device performance and enhanced applicability
US6080987A (en) * 1997-10-28 2000-06-27 Raytheon Company Infrared-sensitive conductive-polymer coating
US6083557A (en) * 1997-10-28 2000-07-04 Raytheon Company System and method for making a conductive polymer coating
US6064683A (en) * 1997-12-12 2000-05-16 Honeywell Inc. Bandgap isolated light emitter
GB2333896B (en) 1998-01-31 2003-04-09 Mitel Semiconductor Ab Vertical cavity surface emitting laser
JP3697903B2 (ja) * 1998-07-06 2005-09-21 富士ゼロックス株式会社 面発光レーザおよび面発光レーザアレイ
US6301281B1 (en) * 1998-08-31 2001-10-09 Agilent Technologies, Inc. Semiconductor laser having co-doped distributed bragg reflectors
US6876006B1 (en) 1999-04-27 2005-04-05 Schlumberger Technology Corporation Radiation source
US6465811B1 (en) 1999-07-12 2002-10-15 Gore Enterprise Holdings, Inc. Low-capacitance bond pads for high speed devices
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
US6674777B1 (en) 2000-08-31 2004-01-06 Honeywell International Inc. Protective side wall passivation for VCSEL chips
US6905900B1 (en) * 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
US7065124B2 (en) * 2000-11-28 2006-06-20 Finlsar Corporation Electron affinity engineered VCSELs
US6990135B2 (en) * 2002-10-28 2006-01-24 Finisar Corporation Distributed bragg reflector for optoelectronic device
US6727520B2 (en) 2000-12-29 2004-04-27 Honeywell International Inc. Spatially modulated reflector for an optoelectronic device
TWI227799B (en) * 2000-12-29 2005-02-11 Honeywell Int Inc Resonant reflector for increased wavelength and polarization control
US6836501B2 (en) * 2000-12-29 2004-12-28 Finisar Corporation Resonant reflector for increased wavelength and polarization control
US6782027B2 (en) 2000-12-29 2004-08-24 Finisar Corporation Resonant reflector for use with optoelectronic devices
US6534331B2 (en) 2001-07-24 2003-03-18 Luxnet Corporation Method for making a vertical-cavity surface emitting laser with improved current confinement
US6680963B2 (en) 2001-07-24 2004-01-20 Lux Net Corporation Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement
US6553053B2 (en) 2001-07-25 2003-04-22 Luxnet Corporation Vertical cavity surface emitting laser having improved light output function
US6606199B2 (en) 2001-10-10 2003-08-12 Honeywell International Inc. Graded thickness optical element and method of manufacture therefor
US7026178B2 (en) 2001-11-13 2006-04-11 Applied Optoelectronics, Inc. Method for fabricating a VCSEL with ion-implanted current-confinement structure
KR100427583B1 (ko) 2002-01-16 2004-04-28 한국전자통신연구원 장파장 수직 공진 표면광 레이저의 제조 방법
TW567292B (en) 2002-07-31 2003-12-21 Benq Corp Lamp module and back light device having the same
US6965626B2 (en) * 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
US6813293B2 (en) * 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
JP4184769B2 (ja) * 2002-11-26 2008-11-19 株式会社東芝 面発光型半導体レーザ及びその製造方法
US20040222363A1 (en) * 2003-05-07 2004-11-11 Honeywell International Inc. Connectorized optical component misalignment detection system
US20040247250A1 (en) * 2003-06-03 2004-12-09 Honeywell International Inc. Integrated sleeve pluggable package
US7298942B2 (en) 2003-06-06 2007-11-20 Finisar Corporation Pluggable optical optic system having a lens fiber stop
US7433381B2 (en) 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
US7054345B2 (en) 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
US7075962B2 (en) * 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US7277461B2 (en) * 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
US7149383B2 (en) * 2003-06-30 2006-12-12 Finisar Corporation Optical system with reduced back reflection
US6961489B2 (en) * 2003-06-30 2005-11-01 Finisar Corporation High speed optical system
US20060056762A1 (en) * 2003-07-02 2006-03-16 Honeywell International Inc. Lens optical coupler
US20050013542A1 (en) * 2003-07-16 2005-01-20 Honeywell International Inc. Coupler having reduction of reflections to light source
US7210857B2 (en) * 2003-07-16 2007-05-01 Finisar Corporation Optical coupling system
US20050013539A1 (en) * 2003-07-17 2005-01-20 Honeywell International Inc. Optical coupling system
US6887801B2 (en) * 2003-07-18 2005-05-03 Finisar Corporation Edge bead control method and apparatus
US7257141B2 (en) * 2003-07-23 2007-08-14 Palo Alto Research Center Incorporated Phase array oxide-confined VCSELs
US7031363B2 (en) * 2003-10-29 2006-04-18 Finisar Corporation Long wavelength VCSEL device processing
TWI231154B (en) * 2004-08-03 2005-04-11 Au Optronics Corp Top emitting OLED structure and fabrication method thereof
CN100359711C (zh) * 2004-08-17 2008-01-02 友达光电股份有限公司 顶发光型有机发光二极管结构及其制作方法
US7596165B2 (en) * 2004-08-31 2009-09-29 Finisar Corporation Distributed Bragg Reflector for optoelectronic device
US7829912B2 (en) * 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
US7920612B2 (en) * 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
KR100696389B1 (ko) * 2006-06-05 2007-03-21 정병재 이어폰 볼륨 조절장치용 엘리먼트 및 그 제조방법
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
DE102007046752B4 (de) * 2007-09-28 2022-09-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Quasisubstrat für ein optoelektronisches Bauelement und optoelektronisches Bauelement
JP2015509669A (ja) * 2012-03-06 2015-03-30 ソラア インコーポレーテッドＳｏｒａａ Ｉｎｃ． 導波光効果を低減させる低屈折率材料層を有する発光ダイオード
US9625647B2 (en) 2014-01-29 2017-04-18 The University Of Connecticut Optoelectronic integrated circuit
WO2017178299A1 (en) * 2016-04-15 2017-10-19 Lumileds Holding B.V. Broadband mirror
FR3078834B1 (fr) * 2018-03-08 2020-03-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif d’emission lumineuse comportant au moins un vcsel et une lentille de diffusion
CN112117638B (zh) * 2019-06-21 2023-05-16 光环科技股份有限公司 垂直共振腔面发射激光结构

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JPS6083389A (ja) * 1983-10-13 1985-05-11 Res Dev Corp Of Japan 面発光レ−ザ発振装置
JPH0740619B2 (ja) * 1985-10-14 1995-05-01 松下電器産業株式会社 半導体レ−ザ装置
JPH0738457B2 (ja) * 1986-07-18 1995-04-26 株式会社東芝 光・電子双安定素子
JPS63278292A (ja) * 1987-05-09 1988-11-15 Fujitsu Ltd 電荷注入形半導体レ−ザ
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US4943970A (en) * 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US4949350A (en) * 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser

Also Published As

Publication number Publication date
KR100195767B1 (ko) 1999-06-15
HK193595A (en) 1996-01-05
US5115442A (en) 1992-05-19
CA2037013C (en) 1994-02-08
DE69104763T2 (de) 1995-03-02
EP0452032A2 (de) 1991-10-16
SG31295G (en) 1995-08-18
JPH04226093A (ja) 1992-08-14
CA2037013A1 (en) 1991-10-14
JP3289920B2 (ja) 2002-06-10
EP0452032A3 (en) 1992-04-08
EP0452032B1 (de) 1994-10-26
KR910019295A (ko) 1991-11-30

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