DE69016113T2 - Verfahren zur Korrosionsinhibierung in einer elektronischen Packung. - Google Patents

Verfahren zur Korrosionsinhibierung in einer elektronischen Packung.

Info

Publication number
DE69016113T2
DE69016113T2 DE69016113T DE69016113T DE69016113T2 DE 69016113 T2 DE69016113 T2 DE 69016113T2 DE 69016113 T DE69016113 T DE 69016113T DE 69016113 T DE69016113 T DE 69016113T DE 69016113 T2 DE69016113 T2 DE 69016113T2
Authority
DE
Germany
Prior art keywords
electronic package
inhibiting corrosion
inhibiting
corrosion
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69016113T
Other languages
English (en)
Other versions
DE69016113D1 (de
Inventor
Cheng Shirley Nmn
Constance Joan Araps
Allen Joseph Arnold
Jeffrey Thomas Coffin
Luu Thanh Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69016113D1 publication Critical patent/DE69016113D1/de
Publication of DE69016113T2 publication Critical patent/DE69016113T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/12—Oxygen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/14—Nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F15/00—Other methods of preventing corrosion or incrustation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Detergent Compositions (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
DE69016113T 1989-06-22 1990-04-10 Verfahren zur Korrosionsinhibierung in einer elektronischen Packung. Expired - Fee Related DE69016113T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/370,355 US5049201A (en) 1989-06-22 1989-06-22 Method of inhibiting corrosion in an electronic package

Publications (2)

Publication Number Publication Date
DE69016113D1 DE69016113D1 (de) 1995-03-02
DE69016113T2 true DE69016113T2 (de) 1995-06-29

Family

ID=23459279

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69016113T Expired - Fee Related DE69016113T2 (de) 1989-06-22 1990-04-10 Verfahren zur Korrosionsinhibierung in einer elektronischen Packung.

Country Status (4)

Country Link
US (1) US5049201A (de)
EP (1) EP0407324B1 (de)
JP (1) JPH0760929B2 (de)
DE (1) DE69016113T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4002327A1 (de) * 1990-01-26 1991-08-01 Wacker Chemitronic Verfahren zur nasschemischen behandlung von halbleiteroberflaechen und loesung zu seiner durchfuehrung
US6121217A (en) 1990-11-05 2000-09-19 Ekc Technology, Inc. Alkanolamine semiconductor process residue removal composition and process
US6242400B1 (en) 1990-11-05 2001-06-05 Ekc Technology, Inc. Method of stripping resists from substrates using hydroxylamine and alkanolamine
US7205265B2 (en) * 1990-11-05 2007-04-17 Ekc Technology, Inc. Cleaning compositions and methods of use thereof
US20040018949A1 (en) * 1990-11-05 2004-01-29 Wai Mun Lee Semiconductor process residue removal composition and process
US6000411A (en) * 1990-11-05 1999-12-14 Ekc Technology, Inc. Cleaning compositions for removing etching residue and method of using
US6110881A (en) * 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US5753601A (en) * 1991-01-25 1998-05-19 Ashland Inc Organic stripping composition
US5332444A (en) * 1992-11-25 1994-07-26 Air Products And Chemicals, Inc. Gas phase cleaning agents for removing metal containing contaminants from integrated circuit assemblies and a process for using the same
US7144849B2 (en) * 1993-06-21 2006-12-05 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
JPH08231989A (ja) * 1995-02-23 1996-09-10 Kurita Water Ind Ltd 洗浄剤組成物及び洗浄方法
DE19631363C1 (de) * 1996-08-02 1998-02-12 Siemens Ag Wässrige Reinigungslösung für ein Halbleitersubstrat
US6066609A (en) * 1997-07-31 2000-05-23 Siemens Aktiengesellschaft Aqueous solution for cleaning a semiconductor substrate
US6147225A (en) * 1998-06-02 2000-11-14 Betzdearborn Inc. Thiacrown ether compound
US6187227B1 (en) * 1998-06-02 2001-02-13 Betzdearborn Thiacrown ether compound corrosion inhibitors for alkanolamine units
US6641933B1 (en) * 1999-09-24 2003-11-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting EL display device
DE102015121344B4 (de) 2015-12-08 2023-11-02 Infineon Technologies Austria Ag Halbleitervorrichtung und verfahren zu ihrer herstellung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3993123A (en) * 1975-10-28 1976-11-23 International Business Machines Corporation Gas encapsulated cooling module
US4271425A (en) * 1979-11-02 1981-06-02 Western Electric Company, Inc. Encapsulated electronic devices and encapsulating compositions having crown ethers
US4396796A (en) * 1980-10-30 1983-08-02 Western Electric Company, Inc. Encapsulated electronic devices and encapsulating compositions
US4711853A (en) * 1982-06-07 1987-12-08 The President And Trustees Of The Miami University Method of detecting potassium ions using trifluoromethyl-substituted chromogenic crown ethers
SU1344814A1 (ru) * 1985-07-08 1987-10-15 Всесоюзный Научно-Исследовательский Инструментальный Институт Раствор дл очистки поверхности металлических изделий
JPH02103292A (ja) * 1988-10-12 1990-04-16 Fujitsu Ltd フラックス残渣洗浄液
JPH03208343A (ja) * 1990-01-10 1991-09-11 Fujitsu Ltd 半導体基板用洗浄剤
DE4002327A1 (de) * 1990-01-26 1991-08-01 Wacker Chemitronic Verfahren zur nasschemischen behandlung von halbleiteroberflaechen und loesung zu seiner durchfuehrung

Also Published As

Publication number Publication date
DE69016113D1 (de) 1995-03-02
JPH0760929B2 (ja) 1995-06-28
EP0407324A2 (de) 1991-01-09
JPH0344091A (ja) 1991-02-25
US5049201A (en) 1991-09-17
EP0407324B1 (de) 1995-01-18
EP0407324A3 (en) 1993-03-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee