DE69013190D1 - Halbleitereinrichtung mit pin-Photodiode. - Google Patents

Halbleitereinrichtung mit pin-Photodiode.

Info

Publication number
DE69013190D1
DE69013190D1 DE69013190T DE69013190T DE69013190D1 DE 69013190 D1 DE69013190 D1 DE 69013190D1 DE 69013190 T DE69013190 T DE 69013190T DE 69013190 T DE69013190 T DE 69013190T DE 69013190 D1 DE69013190 D1 DE 69013190D1
Authority
DE
Germany
Prior art keywords
semiconductor device
pin photodiode
photodiode
pin
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69013190T
Other languages
English (en)
Other versions
DE69013190T2 (de
Inventor
Masao Makiuchi
Tatsuyuki Sanada
Osamu Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1061544A external-priority patent/JPH02239674A/ja
Priority claimed from JP1125585A external-priority patent/JPH02305480A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69013190D1 publication Critical patent/DE69013190D1/de
Publication of DE69013190T2 publication Critical patent/DE69013190T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
DE69013190T 1989-03-14 1990-03-14 Halbleitereinrichtung mit pin-Photodiode. Expired - Fee Related DE69013190T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1061544A JPH02239674A (ja) 1989-03-14 1989-03-14 半導体装置の製造方法
JP1125585A JPH02305480A (ja) 1989-05-20 1989-05-20 光半導体装置

Publications (2)

Publication Number Publication Date
DE69013190D1 true DE69013190D1 (de) 1994-11-17
DE69013190T2 DE69013190T2 (de) 1995-02-16

Family

ID=26402587

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69013190T Expired - Fee Related DE69013190T2 (de) 1989-03-14 1990-03-14 Halbleitereinrichtung mit pin-Photodiode.

Country Status (2)

Country Link
EP (1) EP0388161B1 (de)
DE (1) DE69013190T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5605856A (en) * 1995-03-14 1997-02-25 University Of North Carolina Method for designing an electronic integrated circuit with optical inputs and outputs
JPH09307134A (ja) * 1996-05-13 1997-11-28 Fujitsu Ltd 受光素子及びその光モジュール並びに光ユニット
DE10236376A1 (de) * 2002-08-02 2004-02-26 Infineon Technologies Ag Träger für optoelektronische Bauelemente sowie optische Sendeeinrichtung und optische Empfangseinrichtung
CN111952398A (zh) * 2019-05-17 2020-11-17 清华大学 一种平衡探测器及其制备方法

Also Published As

Publication number Publication date
EP0388161A3 (de) 1991-04-03
DE69013190T2 (de) 1995-02-16
EP0388161B1 (de) 1994-10-12
EP0388161A2 (de) 1990-09-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee