DE69012196D1 - Halbleiterdruckwandler und dessen Herstellungsverfahren. - Google Patents

Halbleiterdruckwandler und dessen Herstellungsverfahren.

Info

Publication number
DE69012196D1
DE69012196D1 DE69012196T DE69012196T DE69012196D1 DE 69012196 D1 DE69012196 D1 DE 69012196D1 DE 69012196 T DE69012196 T DE 69012196T DE 69012196 T DE69012196 T DE 69012196T DE 69012196 D1 DE69012196 D1 DE 69012196D1
Authority
DE
Germany
Prior art keywords
manufacturing process
pressure transducer
semiconductor pressure
semiconductor
transducer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69012196T
Other languages
English (en)
Other versions
DE69012196T2 (de
Inventor
Robert L Tucker
Joseph M Staller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69012196D1 publication Critical patent/DE69012196D1/de
Publication of DE69012196T2 publication Critical patent/DE69012196T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • ing And Chemical Polishing (AREA)
DE69012196T 1989-04-27 1990-03-19 Halbleiterdruckwandler und dessen Herstellungsverfahren. Expired - Lifetime DE69012196T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/343,986 US4889590A (en) 1989-04-27 1989-04-27 Semiconductor pressure sensor means and method

Publications (2)

Publication Number Publication Date
DE69012196D1 true DE69012196D1 (de) 1994-10-13
DE69012196T2 DE69012196T2 (de) 1995-03-30

Family

ID=23348526

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69012196T Expired - Lifetime DE69012196T2 (de) 1989-04-27 1990-03-19 Halbleiterdruckwandler und dessen Herstellungsverfahren.

Country Status (5)

Country Link
US (1) US4889590A (de)
EP (1) EP0394664B1 (de)
JP (1) JPH039574A (de)
KR (1) KR0182291B1 (de)
DE (1) DE69012196T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978421A (en) * 1989-11-13 1990-12-18 International Business Machines Corporation Monolithic silicon membrane device fabrication process
CN1018844B (zh) * 1990-06-02 1992-10-28 中国科学院兰州化学物理研究所 防锈干膜润滑剂
JP3194594B2 (ja) * 1990-09-26 2001-07-30 株式会社日立製作所 構造体の製造方法
DE4206677C1 (de) * 1992-02-28 1993-09-02 Siemens Ag, 80333 Muenchen, De
US5549785A (en) * 1992-09-14 1996-08-27 Nippondenso Co., Ltd. Method of producing a semiconductor dynamic sensor
US5351550A (en) * 1992-10-16 1994-10-04 Honeywell Inc. Pressure sensor adapted for use with a component carrier
US5413679A (en) * 1993-06-30 1995-05-09 The United States Of America As Represented By The Secretary Of The Navy Method of producing a silicon membrane using a silicon alloy etch stop layer
US5949118A (en) * 1994-03-14 1999-09-07 Nippondenso Co., Ltd. Etching method for silicon substrates and semiconductor sensor
CA2176052A1 (en) * 1995-06-07 1996-12-08 James D. Seefeldt Transducer having a resonating silicon beam and method for forming same
US5736430A (en) * 1995-06-07 1998-04-07 Ssi Technologies, Inc. Transducer having a silicon diaphragm and method for forming same
US6021675A (en) * 1995-06-07 2000-02-08 Ssi Technologies, Inc. Resonating structure and method for forming the resonating structure
DE19528961C2 (de) 1995-08-08 1998-10-29 Daimler Benz Ag Mikromechanischer Drehratensensor (DRS) und Sensoranordnung
US5759870A (en) * 1995-08-28 1998-06-02 Bei Electronics, Inc. Method of making a surface micro-machined silicon pressure sensor
US6284670B1 (en) 1997-07-23 2001-09-04 Denso Corporation Method of etching silicon wafer and silicon wafer
US5994161A (en) * 1997-09-03 1999-11-30 Motorola, Inc. Temperature coefficient of offset adjusted semiconductor device and method thereof
US6297069B1 (en) * 1999-01-28 2001-10-02 Honeywell Inc. Method for supporting during fabrication mechanical members of semi-conductive dies, wafers, and devices and an associated intermediate device assembly
US6622558B2 (en) * 2000-11-30 2003-09-23 Orbital Research Inc. Method and sensor for detecting strain using shape memory alloys
US8109149B2 (en) 2004-11-17 2012-02-07 Lawrence Livermore National Security, Llc Contact stress sensor
US8132465B1 (en) 2007-08-01 2012-03-13 Silicon Microstructures, Inc. Sensor element placement for package stress compensation
DE102008035017A1 (de) * 2008-07-25 2010-01-28 Endress + Hauser Gmbh + Co. Kg Halbleiterdrucksensor und Verfahren zu seiner Herstellung
US8028581B2 (en) * 2008-08-08 2011-10-04 Toyota Motor Engineering & Manufacturing North America, Inc. Methods and systems for ultrasonic inspection of rotating shafts
US8525279B2 (en) * 2009-06-04 2013-09-03 University Of Louisville Research Foundation, Inc. Single element three terminal piezoresistive pressure sensor
US8709848B2 (en) 2011-04-15 2014-04-29 Freescale Semiconductor, Inc. Method for etched cavity devices
US8993451B2 (en) * 2011-04-15 2015-03-31 Freescale Semiconductor, Inc. Etching trenches in a substrate
EP2693271A1 (de) * 2012-08-02 2014-02-05 LayTec AG Vorrichtung und Verfahren zum Messen der Abmessungen von 1-dimensionalen und 0-dimensionalen Nanostrukturen in Echtzeit während des Epitaxialwachstums

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3230763A (en) * 1962-12-27 1966-01-25 Honeywell Inc Semiconductor pressure diaphragm
US3213681A (en) * 1963-05-21 1965-10-26 Fairchild Camera Instr Co Shear gauge pressure-measuring device
US4180422A (en) * 1969-02-03 1979-12-25 Raytheon Company Method of making semiconductor diodes
JPS4936792B1 (de) * 1970-10-15 1974-10-03
US3758830A (en) * 1972-04-10 1973-09-11 Hewlett Packard Co Transducer formed in peripherally supported thin semiconductor web
US3994009A (en) * 1973-02-12 1976-11-23 Honeywell Inc. Stress sensor diaphragms over recessed substrates
JPS5624387B2 (de) * 1973-10-09 1981-06-05
US4065970A (en) * 1976-05-17 1978-01-03 Becton, Dickinson Electronics Company Diffused semiconductor pressure gauge
US4204185A (en) * 1977-10-13 1980-05-20 Kulite Semiconductor Products, Inc. Integral transducer assemblies employing thin homogeneous diaphragms
DE2841312C2 (de) * 1978-09-22 1985-06-05 Robert Bosch Gmbh, 7000 Stuttgart Monolithischer Halbleiter-Drucksensor und Verfahren zu dessen Herstellung
US4317126A (en) * 1980-04-14 1982-02-23 Motorola, Inc. Silicon pressure sensor
JPS59117271A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 圧力感知素子を有する半導体装置とその製造法
US4783237A (en) * 1983-12-01 1988-11-08 Harry E. Aine Solid state transducer and method of making same
JPH0712086B2 (ja) * 1984-01-27 1995-02-08 株式会社日立製作所 ダイヤフラムセンサの製造方法
JPS6260270A (ja) * 1985-09-10 1987-03-16 Fujikura Ltd 圧力センサのダイアフラム形成法
US4766666A (en) * 1985-09-30 1988-08-30 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor pressure sensor and method of manufacturing the same
US4672354A (en) * 1985-12-05 1987-06-09 Kulite Semiconductor Products, Inc. Fabrication of dielectrically isolated fine line semiconductor transducers and apparatus
JPH0810170B2 (ja) * 1987-03-06 1996-01-31 株式会社日立製作所 半導体絶対圧力センサの製造方法
US4784721A (en) * 1988-02-22 1988-11-15 Honeywell Inc. Integrated thin-film diaphragm; backside etch
JPH0634074A (ja) * 1992-07-10 1994-02-08 Sekisui Chem Co Ltd 管体の接続装置

Also Published As

Publication number Publication date
KR0182291B1 (ko) 1999-04-15
DE69012196T2 (de) 1995-03-30
JPH039574A (ja) 1991-01-17
EP0394664A2 (de) 1990-10-31
EP0394664B1 (de) 1994-09-07
US4889590A (en) 1989-12-26
KR900017093A (ko) 1990-11-15
EP0394664A3 (de) 1992-06-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC. (N.D.GES.D. STAATES