DE68926990D1 - Photometrisches Gerät mit einem Festkörperbildsensor - Google Patents

Photometrisches Gerät mit einem Festkörperbildsensor

Info

Publication number
DE68926990D1
DE68926990D1 DE68926990T DE68926990T DE68926990D1 DE 68926990 D1 DE68926990 D1 DE 68926990D1 DE 68926990 T DE68926990 T DE 68926990T DE 68926990 T DE68926990 T DE 68926990T DE 68926990 D1 DE68926990 D1 DE 68926990D1
Authority
DE
Germany
Prior art keywords
solid
image sensor
state image
photometric device
photometric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68926990T
Other languages
English (en)
Other versions
DE68926990T2 (de
Inventor
Masahiro Gurinpuraza Muts Juen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of DE68926990D1 publication Critical patent/DE68926990D1/de
Publication of DE68926990T2 publication Critical patent/DE68926990T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70Circuitry for compensating brightness variation in the scene
    • H04N23/73Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70Circuitry for compensating brightness variation in the scene
    • H04N23/71Circuitry for evaluating the brightness variation
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/703SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/706Pixels for exposure or ambient light measuring

Landscapes

  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE68926990T 1988-10-18 1989-10-18 Photometrisches Gerät mit einem Festkörperbildsensor Expired - Lifetime DE68926990T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63262367A JP2720478B2 (ja) 1988-10-18 1988-10-18 縦型オーバーフロードレインを備える固体撮像素子を用いた測光装置

Publications (2)

Publication Number Publication Date
DE68926990D1 true DE68926990D1 (de) 1996-09-26
DE68926990T2 DE68926990T2 (de) 1997-01-16

Family

ID=17374759

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926990T Expired - Lifetime DE68926990T2 (de) 1988-10-18 1989-10-18 Photometrisches Gerät mit einem Festkörperbildsensor

Country Status (4)

Country Link
US (1) US4977312A (de)
EP (1) EP0365294B1 (de)
JP (1) JP2720478B2 (de)
DE (1) DE68926990T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69108803T2 (de) * 1990-01-08 1995-08-24 Nippon Kogaku Kk Anordnung für die Verarbeitung von Stehbildern.
KR930008527B1 (ko) * 1990-10-13 1993-09-09 금성일렉트론 주식회사 Npn형 vccd 구조의 고체촬상 소자
US5291044A (en) * 1990-12-12 1994-03-01 Eastman Kodak Company Image sensor with continuous time photodiode
US5276520A (en) * 1991-06-07 1994-01-04 Eastman Kodak Company Enhancing exposure latitude of image sensors
JP3278243B2 (ja) * 1993-06-18 2002-04-30 キヤノン株式会社 光電変換装置
US5962856A (en) * 1995-04-28 1999-10-05 Sunnybrook Hospital Active matrix X-ray imaging array
JP2000092395A (ja) * 1998-09-11 2000-03-31 Nec Corp 固体撮像装置およびその駆動方法
JP4695902B2 (ja) * 2005-03-18 2011-06-08 キヤノン株式会社 固体撮像装置の製造方法
KR101003054B1 (ko) 2005-09-21 2010-12-21 알제이에스 테크놀로지, 인코포레이티드 고 분해능 및 넓은 동작범위의 적분기
JP5125010B2 (ja) * 2006-07-20 2013-01-23 ソニー株式会社 固体撮像装置、及び制御システム
US8184188B2 (en) * 2009-03-12 2012-05-22 Micron Technology, Inc. Methods and apparatus for high dynamic operation of a pixel cell
JP5446738B2 (ja) * 2009-11-02 2014-03-19 ソニー株式会社 固体撮像素子およびカメラシステム
CN113063996A (zh) * 2016-04-28 2021-07-02 中国科学院空天信息创新研究院 一种静电驱动金属微结构电场传感器
CN106093605A (zh) * 2016-06-08 2016-11-09 中国科学院电子学研究所 一种扭转式电场传感器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3934161A (en) * 1974-04-29 1976-01-20 Texas Instruments Incorporated Electronic shutter for a charge-coupled imager
DE3168333D1 (en) * 1980-09-19 1985-02-28 Nec Corp Semiconductor photoelectric converter
JPS6020687A (ja) * 1983-07-15 1985-02-01 Nippon Kogaku Kk <Nikon> 電子スチルカメラ
DE3706252A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleiterfotosensor
US4879470A (en) * 1987-01-16 1989-11-07 Canon Kabushiki Kaisha Photoelectric converting apparatus having carrier eliminating means

Also Published As

Publication number Publication date
EP0365294A2 (de) 1990-04-25
JP2720478B2 (ja) 1998-03-04
DE68926990T2 (de) 1997-01-16
JPH02108924A (ja) 1990-04-20
US4977312A (en) 1990-12-11
EP0365294A3 (de) 1991-05-02
EP0365294B1 (de) 1996-08-21

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Legal Events

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8328 Change in the person/name/address of the agent

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