DE68926472D1 - Hochspannungspulserzeugungsgerät - Google Patents

Hochspannungspulserzeugungsgerät

Info

Publication number
DE68926472D1
DE68926472D1 DE68926472T DE68926472T DE68926472D1 DE 68926472 D1 DE68926472 D1 DE 68926472D1 DE 68926472 T DE68926472 T DE 68926472T DE 68926472 T DE68926472 T DE 68926472T DE 68926472 D1 DE68926472 D1 DE 68926472D1
Authority
DE
Germany
Prior art keywords
high voltage
generating device
voltage pulse
pulse generating
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68926472T
Other languages
English (en)
Other versions
DE68926472T2 (de
Inventor
Arthur J Caya
Paul A Beck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of DE68926472D1 publication Critical patent/DE68926472D1/de
Application granted granted Critical
Publication of DE68926472T2 publication Critical patent/DE68926472T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
DE68926472T 1988-03-14 1989-03-09 Hochspannungspulserzeugungsgerät Expired - Lifetime DE68926472T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/167,813 US4831280A (en) 1988-03-14 1988-03-14 High voltage pulse generating apparatus

Publications (2)

Publication Number Publication Date
DE68926472D1 true DE68926472D1 (de) 1996-06-20
DE68926472T2 DE68926472T2 (de) 1997-01-23

Family

ID=22608942

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926472T Expired - Lifetime DE68926472T2 (de) 1988-03-14 1989-03-09 Hochspannungspulserzeugungsgerät

Country Status (4)

Country Link
US (1) US4831280A (de)
EP (1) EP0333380B1 (de)
JP (1) JP3055904B2 (de)
DE (1) DE68926472T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212474A (en) * 1990-05-07 1993-05-18 U.S. Philips Corporation Quasi-static level shifter
EP0456311B1 (de) * 1990-05-07 1997-01-15 Koninklijke Philips Electronics N.V. Quasi-statischer Pegelumsetzer
JP3123337B2 (ja) * 1994-03-31 2001-01-09 富士電機株式会社 電圧駆動型半導体素子用のゲート駆動用回路装置
US6924681B2 (en) * 2001-05-23 2005-08-02 Texas Instruments Incorporated Efficient pulse amplitude modulation transmit modulation
US6897706B2 (en) * 2003-02-13 2005-05-24 Imp Inc. Method for driving a high side P-CHANNEL MOSFET
DE102007063687B4 (de) 2006-03-22 2013-03-14 Denso Corporation Schaltkreis mit einem Transistor
US20090140791A1 (en) * 2007-11-29 2009-06-04 Young Paul D Switching Element Control
US8125198B2 (en) * 2008-11-24 2012-02-28 The United States Of America As Represented By The Secretary Of The Navy Multi-function modulator for low-powered, wired and wireless command, control, and communications applications
GB2511334A (en) * 2013-02-28 2014-09-03 Control Tech Ltd Drive circuit for power transistor
TWI752794B (zh) * 2021-01-12 2022-01-11 宏汭精測科技股份有限公司 可調電位之閘極驅動電路及裝置
TWI752793B (zh) * 2021-01-12 2022-01-11 宏汭精測科技股份有限公司 部分脈衝電位可調之閘極驅動電路及裝置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271700A (en) * 1963-03-01 1966-09-06 Gen Electric Solid state switching circuits
US3932772A (en) * 1974-09-27 1976-01-13 Gte Sylvania Incorporated High voltage switching generator
US4467224A (en) * 1982-03-18 1984-08-21 Rca Corporation System for applying a high voltage source to a CRT through a capacitive load
JPS60182488A (ja) * 1984-02-29 1985-09-18 日本電気株式会社 駆動用電子回路
AU549174B2 (en) * 1984-05-08 1986-01-16 Matsushita Electric Industrial Co., Ltd. Control system for dc motors
US4697096A (en) * 1985-03-04 1987-09-29 Raytheon Company High voltage solid state switch
US4677324A (en) * 1986-03-21 1987-06-30 Rca Corporation Fast switch-off circuit for conductivity modulated field effect transistor
US4704551A (en) * 1986-06-27 1987-11-03 Methode Of California Low voltage/high voltage field effect transistor (FET) switching circuit for printed circuit board tester

Also Published As

Publication number Publication date
EP0333380A3 (en) 1990-12-27
EP0333380B1 (de) 1996-05-15
EP0333380A2 (de) 1989-09-20
DE68926472T2 (de) 1997-01-23
JPH01272313A (ja) 1989-10-31
JP3055904B2 (ja) 2000-06-26
US4831280A (en) 1989-05-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition