DE68923443D1 - Mikroelektronische Anordnung basierend auf mesoskopische Phänomene. - Google Patents

Mikroelektronische Anordnung basierend auf mesoskopische Phänomene.

Info

Publication number
DE68923443D1
DE68923443D1 DE68923443T DE68923443T DE68923443D1 DE 68923443 D1 DE68923443 D1 DE 68923443D1 DE 68923443 T DE68923443 T DE 68923443T DE 68923443 T DE68923443 T DE 68923443T DE 68923443 D1 DE68923443 D1 DE 68923443D1
Authority
DE
Germany
Prior art keywords
arrangement based
microelectronic arrangement
mesoscopic
phenomena
mesoscopic phenomena
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68923443T
Other languages
English (en)
Other versions
DE68923443T2 (de
Inventor
Robert B Laibowitz
Corwin P Umbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE68923443D1 publication Critical patent/DE68923443D1/de
Application granted granted Critical
Publication of DE68923443T2 publication Critical patent/DE68923443T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
DE68923443T 1989-01-11 1989-09-21 Mikroelektronische Anordnung basierend auf mesoskopische Phänomene. Expired - Fee Related DE68923443T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/295,727 US4982248A (en) 1989-01-11 1989-01-11 Gated structure for controlling fluctuations in mesoscopic structures

Publications (2)

Publication Number Publication Date
DE68923443D1 true DE68923443D1 (de) 1995-08-17
DE68923443T2 DE68923443T2 (de) 1996-03-07

Family

ID=23138990

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68923443T Expired - Fee Related DE68923443T2 (de) 1989-01-11 1989-09-21 Mikroelektronische Anordnung basierend auf mesoskopische Phänomene.

Country Status (4)

Country Link
US (1) US4982248A (de)
EP (1) EP0377790B1 (de)
JP (1) JPH0650775B2 (de)
DE (1) DE68923443T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2679381B1 (fr) * 1991-07-19 1993-10-08 Alcatel Alsthom Cie Gle Electric Convertisseur opto-electronique.
JPH08107216A (ja) * 1994-10-04 1996-04-23 Fujitsu Ltd 半導体装置
SE514610C2 (sv) 1998-11-27 2001-03-19 Ericsson Telefon Ab L M Supraledande transistoranordning och ett förfarande relaterande därtill
JP3477638B2 (ja) * 1999-07-09 2003-12-10 科学技術振興事業団 強磁性２重量子井戸トンネル磁気抵抗デバイス
US6956269B1 (en) * 2003-12-22 2005-10-18 National Semiconductor Corporation Spin-polarization of carriers in semiconductor materials for spin-based microelectronic devices
JP4808494B2 (ja) * 2005-12-28 2011-11-02 富士通株式会社 半導体装置及びその製造方法
US8249401B2 (en) * 2009-07-28 2012-08-21 The Invention Science Fund I Llc Surface state gain
US7995879B2 (en) * 2009-07-28 2011-08-09 The Invention Science Fund I, Llc Surface state gain

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3584268A (en) * 1967-03-03 1971-06-08 Xerox Corp Inverted space charge limited triode
US3736571A (en) * 1971-02-10 1973-05-29 Micro Bit Corp Method and system for improved operation of conductor-insulator-semiconductor capacitor memory having increased storage capability
US4187513A (en) * 1977-11-30 1980-02-05 Eaton Corporation Solid state current limiter
JPS5676573A (en) * 1979-11-28 1981-06-24 Nippon Telegr & Teleph Corp <Ntt> Field effect semiconductor device
DE3072175D1 (de) * 1979-12-28 1990-04-26 Fujitsu Ltd Halbleitervorrichtungen mit heterouebergang.
FR2489045A1 (fr) * 1980-08-20 1982-02-26 Thomson Csf Transistor a effet de champ gaas a memoire non volatile
JPS57170510A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Method of ion implantation
US4488164A (en) * 1982-06-10 1984-12-11 At&T Bell Laboratories Quantized Hall effect switching devices
US4550330A (en) * 1984-06-29 1985-10-29 International Business Machines Corporation Semiconductor interferometer

Also Published As

Publication number Publication date
EP0377790B1 (de) 1995-07-12
US4982248A (en) 1991-01-01
EP0377790A2 (de) 1990-07-18
JPH0650775B2 (ja) 1994-06-29
EP0377790A3 (de) 1991-08-21
JPH02207572A (ja) 1990-08-17
DE68923443T2 (de) 1996-03-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee