DE68922244D1 - Verfahren zur Durchführung einer Plasmareaktion bei Atmosphärendruck. - Google Patents
Verfahren zur Durchführung einer Plasmareaktion bei Atmosphärendruck.Info
- Publication number
- DE68922244D1 DE68922244D1 DE68922244T DE68922244T DE68922244D1 DE 68922244 D1 DE68922244 D1 DE 68922244D1 DE 68922244 T DE68922244 T DE 68922244T DE 68922244 T DE68922244 T DE 68922244T DE 68922244 D1 DE68922244 D1 DE 68922244D1
- Authority
- DE
- Germany
- Prior art keywords
- atmospheric pressure
- plasma reaction
- plasma
- reaction
- atmospheric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13863088A JPH0248626B2 (ja) | 1988-06-06 | 1988-06-06 | Hakumakukeiseihohotosonosochi |
JP63166599A JPH0672308B2 (ja) | 1988-07-04 | 1988-07-04 | 大気圧プラズマ反応方法 |
JP63202977A JPH0748480B2 (ja) | 1988-08-15 | 1988-08-15 | 大気圧プラズマ反応方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68922244D1 true DE68922244D1 (de) | 1995-05-24 |
DE68922244T2 DE68922244T2 (de) | 1995-09-14 |
Family
ID=27317713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68922244T Expired - Lifetime DE68922244T2 (de) | 1988-06-06 | 1989-06-06 | Verfahren zur Durchführung einer Plasmareaktion bei Atmosphärendruck. |
Country Status (3)
Country | Link |
---|---|
US (2) | US5126164A (de) |
EP (1) | EP0346055B1 (de) |
DE (1) | DE68922244T2 (de) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5031571A (en) * | 1988-02-01 | 1991-07-16 | Mitsui Toatsu Chemicals, Inc. | Apparatus for forming a thin film on a substrate |
EP0431951B1 (de) * | 1989-12-07 | 1998-10-07 | Research Development Corporation Of Japan | Verfahren und Gerät zur Plasmabehandlung unter atmosphärischem Druck |
JP2929651B2 (ja) * | 1990-03-14 | 1999-08-03 | 株式会社ブリヂストン | ゴム系複合材料の製造方法 |
JP2897055B2 (ja) * | 1990-03-14 | 1999-05-31 | 株式会社ブリヂストン | ゴム系複合材料の製造方法 |
US5262097A (en) * | 1990-07-03 | 1993-11-16 | Allergan, Inc. | Methods for attaching fixation members to optics of intraocular lenses |
US5074456A (en) | 1990-09-18 | 1991-12-24 | Lam Research Corporation | Composite electrode for plasma processes |
US5578130A (en) * | 1990-12-12 | 1996-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for depositing a film |
JP2840699B2 (ja) * | 1990-12-12 | 1998-12-24 | 株式会社 半導体エネルギー研究所 | 被膜形成装置及び被膜形成方法 |
JP3206095B2 (ja) * | 1991-04-12 | 2001-09-04 | 株式会社ブリヂストン | 表面処理方法及びその装置 |
US5628883A (en) * | 1991-06-18 | 1997-05-13 | Japan Vilene Co. Ltd. | Method for generating and activating plasma process of treatment using same, and apparatus therefor |
US5399832A (en) * | 1991-08-05 | 1995-03-21 | Kimoto Co., Ltd. | Process and apparatus for using atmospheric-pressure plasma reactions |
GB2259185B (en) * | 1991-08-20 | 1995-08-16 | Bridgestone Corp | Method and apparatus for surface treatment |
US5286532A (en) * | 1991-08-20 | 1994-02-15 | Bridgestone Corporation | Method for producing golf balls |
DE59209786D1 (de) * | 1991-09-20 | 2000-02-03 | Balzers Hochvakuum | Verfahren zur Schutzbeschichtung von Substraten sowie Beschichtungsanlage |
FR2692598B1 (fr) * | 1992-06-17 | 1995-02-10 | Air Liquide | Procédé de dépôt d'un film contenant du silicium à la surface d'un substrat métallique et procédé de traitement anti-corrosion. |
US7264850B1 (en) | 1992-12-28 | 2007-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Process for treating a substrate with a plasma |
WO1994022628A1 (en) * | 1993-04-05 | 1994-10-13 | Seiko Epson Corporation | Combining method and apparatus using solder |
US6835523B1 (en) * | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
US5423929A (en) * | 1993-10-27 | 1995-06-13 | Allergan, Inc. | Intraocular lenses and methods for producing same |
JP3312377B2 (ja) * | 1993-12-09 | 2002-08-05 | セイコーエプソン株式会社 | ろう材による接合方法及び装置 |
WO1995018249A1 (fr) * | 1993-12-24 | 1995-07-06 | Seiko Epson Corporation | Procede et appareil de traitement d'une surface au plasma sous pression atmospherique, procede de production d'un dispositif a semi-conducteurs et procede de production d'une tete d'imprimante a jet d'encre |
US6006763A (en) * | 1995-01-11 | 1999-12-28 | Seiko Epson Corporation | Surface treatment method |
JPH08279495A (ja) * | 1995-02-07 | 1996-10-22 | Seiko Epson Corp | プラズマ処理装置及びその方法 |
JP3521587B2 (ja) * | 1995-02-07 | 2004-04-19 | セイコーエプソン株式会社 | 基板周縁の不要物除去方法及び装置並びにそれを用いた塗布方法 |
DE19505449C2 (de) * | 1995-02-17 | 1997-04-30 | Fraunhofer Ges Forschung | Verfahren zur Herstellung eines Schichtsystems auf Substraten und das mit diesem Verfahren hergestellte Schichtsystem |
US6255718B1 (en) | 1995-02-28 | 2001-07-03 | Chip Express Corporation | Laser ablateable material |
WO1996031997A1 (fr) * | 1995-04-07 | 1996-10-10 | Seiko Epson Corporation | Equipement de traitement de surface |
JP3598602B2 (ja) * | 1995-08-07 | 2004-12-08 | セイコーエプソン株式会社 | プラズマエッチング方法、液晶表示パネルの製造方法、及びプラズマエッチング装置 |
JPH09233862A (ja) * | 1995-12-18 | 1997-09-05 | Seiko Epson Corp | 圧電体を用いた発電方法、発電装置および電子機器 |
US5776553A (en) * | 1996-02-23 | 1998-07-07 | Saint Gobain/Norton Industrial Ceramics Corp. | Method for depositing diamond films by dielectric barrier discharge |
JPH09312545A (ja) | 1996-03-18 | 1997-12-02 | Seiko Epson Corp | 圧電素子、その製造方法、及び圧電振動片のマウント装置 |
US5918354A (en) * | 1996-04-02 | 1999-07-06 | Seiko Epson Corporation | Method of making a piezoelectric element |
US6082294A (en) * | 1996-06-07 | 2000-07-04 | Saint-Gobain Industrial Ceramics, Inc. | Method and apparatus for depositing diamond film |
US5902523A (en) * | 1996-06-26 | 1999-05-11 | Allergan | IOLs and production methods for same |
US5972176A (en) * | 1997-10-03 | 1999-10-26 | 3M Innovative Properties Company | Corona treatment of polymers |
US20030000825A1 (en) * | 1997-12-04 | 2003-01-02 | Korea Institute Of Science And Technology | Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning |
FR2782837B1 (fr) | 1998-08-28 | 2000-09-29 | Air Liquide | Procede et dispositif de traitement de surface par plasma a pression atmospherique |
WO2000070117A1 (en) * | 1999-05-14 | 2000-11-23 | The Regents Of The University Of California | Low-temperature compatible wide-pressure-range plasma flow device |
US7091605B2 (en) | 2001-09-21 | 2006-08-15 | Eastman Kodak Company | Highly moisture-sensitive electronic device element and method for fabrication |
US20030042129A1 (en) * | 2000-04-06 | 2003-03-06 | Korea Institute Of Science And Technology | Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning |
JP2003532568A (ja) | 2000-05-10 | 2003-11-05 | エヌ・ケー・ティー リサーチ アクティーゼルスカブ | 無機基材の表面を有機物質で被覆する方法及び得られた生成物 |
KR100386526B1 (ko) * | 2000-10-02 | 2003-06-02 | 우형철 | 다공성 전극을 이용하는 상압 플라즈마 장치 |
US20020124962A1 (en) * | 2001-03-12 | 2002-09-12 | Selwyn Gary S. | Atmospheric pressure plasma etching reactor |
WO2003019624A2 (en) * | 2001-08-27 | 2003-03-06 | University Of New Hampshire | Dielectric barrier discharge process for depositing silicon nitride film on substrates |
US6869645B2 (en) * | 2001-10-23 | 2005-03-22 | Acushnet Company | Method for plasma treatment of golf balls |
US6923886B2 (en) * | 2001-10-23 | 2005-08-02 | Acushnet Company | Apparatus for plasma treatment of golf balls |
US6764658B2 (en) | 2002-01-08 | 2004-07-20 | Wisconsin Alumni Research Foundation | Plasma generator |
US20030168009A1 (en) * | 2002-03-08 | 2003-09-11 | Denes Ferencz S. | Plasma processing within low-dimension cavities |
EP1642598A3 (de) * | 2002-04-02 | 2007-05-30 | Plasmasol Corporation | System und verfahren für das injizieren eines organischen reagens' in ein leicht ionisiertes gas um chemisch aktive teilchen zu erzeugen |
KR20030081742A (ko) * | 2002-04-12 | 2003-10-22 | 우형철 | 플라즈마를 이용한 에칭처리장치 |
US6936546B2 (en) * | 2002-04-26 | 2005-08-30 | Accretech Usa, Inc. | Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates |
US7288204B2 (en) * | 2002-07-19 | 2007-10-30 | Fuji Photo Film B.V. | Method and arrangement for treating a substrate with an atmospheric pressure glow plasma (APG) |
US7214600B2 (en) * | 2004-06-25 | 2007-05-08 | Applied Materials, Inc. | Method to improve transmittance of an encapsulating film |
US7220687B2 (en) * | 2004-06-25 | 2007-05-22 | Applied Materials, Inc. | Method to improve water-barrier performance by changing film surface morphology |
JP5848862B2 (ja) * | 2004-06-25 | 2016-01-27 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | カプセル化膜の遮水性能の改善 |
US20060040067A1 (en) * | 2004-08-23 | 2006-02-23 | Thomas Culp | Discharge-enhanced atmospheric pressure chemical vapor deposition |
KR100775789B1 (ko) * | 2005-07-09 | 2007-11-13 | 강방권 | 소수성 또는 초소수성 처리를 위하여 상압 플라즈마를이용한 표면코팅방법 |
US20080044588A1 (en) * | 2006-08-15 | 2008-02-21 | Sakhrani Vinay G | Method for Treating a Hydrophilic Surface |
US8084103B2 (en) * | 2006-08-15 | 2011-12-27 | Sakhrani Vinay G | Method for treating a hydrophilic surface |
US20080113103A1 (en) * | 2006-11-10 | 2008-05-15 | Ppg Industries Ohio, Inc. | Halogen treatment of polymer films using atmospheric plasma |
FR2911610B1 (fr) * | 2007-01-24 | 2012-09-21 | Air Liquide | Procede de traitement de surface de substrats polymeres, substrats ainsi obtenus et leur utilisation pour la realisation de materiaux multicouches. |
US20080241355A1 (en) * | 2007-03-30 | 2008-10-02 | Applied Materials, Inc. | Thin film transistor devices having high electron mobility and stability |
TWI386640B (zh) * | 2008-09-26 | 2013-02-21 | Advanced Semiconductor Eng | 基材表面疏水性處理之偵測方法 |
JPWO2011007653A1 (ja) * | 2009-07-13 | 2012-12-27 | 日本碍子株式会社 | ダイアモンドライクカーボン膜形成体の製造方法 |
US20110241269A1 (en) | 2010-04-01 | 2011-10-06 | The Goodyear Tire & Rubber Company | Atmospheric plasma treatment of reinforcement cords and use in rubber articles |
US8445074B2 (en) | 2010-04-01 | 2013-05-21 | The Goodyear Tire & Rubber Company | Atmospheric plasma treatment of tire cords |
US20120067485A1 (en) * | 2010-09-20 | 2012-03-22 | Serge Julien Auguste Imhoff | Pneumatic tire and method for making a pneumatic tire |
CH705973B1 (fr) * | 2012-01-09 | 2016-09-15 | L'université De Genève | Procédé de traitement de surface d'un objet. |
US9133412B2 (en) | 2012-07-09 | 2015-09-15 | Tribofilm Research, Inc. | Activated gaseous species for improved lubrication |
US9433971B2 (en) | 2012-10-04 | 2016-09-06 | The Goodyear Tire & Rubber Company | Atmospheric plasma treatment of reinforcement cords and use in rubber articles |
US9441325B2 (en) | 2012-10-04 | 2016-09-13 | The Goodyear Tire & Rubber Company | Atmospheric plasma treatment of reinforcement cords and use in rubber articles |
KR102156795B1 (ko) * | 2013-05-15 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 증착 장치 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4292384A (en) * | 1977-09-30 | 1981-09-29 | Horizons Research Incorporated | Gaseous plasma developing and etching process employing low voltage DC generation |
FR2411897A2 (fr) * | 1977-12-13 | 1979-07-13 | Alsthom Atlantique | Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma |
US4223048A (en) * | 1978-08-07 | 1980-09-16 | Pacific Western Systems | Plasma enhanced chemical vapor processing of semiconductive wafers |
JPS5642377A (en) * | 1979-09-14 | 1981-04-20 | Fujitsu Ltd | Ultraviolet ray erasable type rewritable read-only memory |
JPS58175824A (ja) * | 1983-03-28 | 1983-10-15 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応用装置 |
JPS59211219A (ja) * | 1983-05-16 | 1984-11-30 | Mitsubishi Electric Corp | プラズマcvd装置 |
JPS6013065A (ja) * | 1983-07-01 | 1985-01-23 | Stanley Electric Co Ltd | 固体表面の撥水性処理方法 |
JPS60258914A (ja) * | 1984-06-05 | 1985-12-20 | Ricoh Co Ltd | プラズマcvd装置 |
JPS6134031A (ja) * | 1984-07-26 | 1986-02-18 | Nippon Paint Co Ltd | 表面処理装置 |
US4616597A (en) * | 1984-10-31 | 1986-10-14 | Rca Corporation | Apparatus for making a plasma coating |
JPS61238961A (ja) * | 1985-04-12 | 1986-10-24 | Sachiko Okazaki | 基材表面の改質方法 |
JPS6269620A (ja) * | 1985-09-24 | 1987-03-30 | Anelva Corp | プラズマ処理装置 |
JPS62163743A (ja) * | 1986-01-11 | 1987-07-20 | Nippon Paint Co Ltd | 表面処理法 |
DE3606959A1 (de) * | 1986-03-04 | 1987-09-10 | Leybold Heraeus Gmbh & Co Kg | Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung |
JPS63117906A (ja) * | 1986-11-07 | 1988-05-21 | Shin Etsu Chem Co Ltd | 多結晶シリコン製造装置用部材 |
JPS63310795A (ja) * | 1987-06-11 | 1988-12-19 | Fujitsu Ltd | マイクロ波プラズマジェットによるダイヤモンド気相合成方法 |
US4834020A (en) * | 1987-12-04 | 1989-05-30 | Watkins-Johnson Company | Atmospheric pressure chemical vapor deposition apparatus |
US5031571A (en) * | 1988-02-01 | 1991-07-16 | Mitsui Toatsu Chemicals, Inc. | Apparatus for forming a thin film on a substrate |
JP2990608B2 (ja) * | 1989-12-13 | 1999-12-13 | 株式会社ブリヂストン | 表面処理方法 |
JP3063769B2 (ja) * | 1990-07-17 | 2000-07-12 | イーシー化学株式会社 | 大気圧プラズマ表面処理法 |
-
1989
- 1989-06-06 DE DE68922244T patent/DE68922244T2/de not_active Expired - Lifetime
- 1989-06-06 EP EP89305671A patent/EP0346055B1/de not_active Expired - Lifetime
-
1990
- 1990-05-14 US US07/522,462 patent/US5126164A/en not_active Expired - Lifetime
-
1995
- 1995-03-09 US US08/401,290 patent/US5733610A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0346055B1 (de) | 1995-04-19 |
EP0346055A3 (en) | 1990-02-07 |
DE68922244T2 (de) | 1995-09-14 |
US5126164A (en) | 1992-06-30 |
US5733610A (en) | 1998-03-31 |
EP0346055A2 (de) | 1989-12-13 |
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