DE68918613D1 - Festkörperbildaufnahmevorrichtung. - Google Patents

Festkörperbildaufnahmevorrichtung.

Info

Publication number
DE68918613D1
DE68918613D1 DE68918613T DE68918613T DE68918613D1 DE 68918613 D1 DE68918613 D1 DE 68918613D1 DE 68918613 T DE68918613 T DE 68918613T DE 68918613 T DE68918613 T DE 68918613T DE 68918613 D1 DE68918613 D1 DE 68918613D1
Authority
DE
Germany
Prior art keywords
imaging device
solid state
state imaging
solid
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68918613T
Other languages
English (en)
Other versions
DE68918613T2 (de
Inventor
Tetsuo Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE68918613D1 publication Critical patent/DE68918613D1/de
Application granted granted Critical
Publication of DE68918613T2 publication Critical patent/DE68918613T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE68918613T 1988-03-08 1989-03-08 Festkörperbildaufnahmevorrichtung. Expired - Fee Related DE68918613T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63054494A JPH07112054B2 (ja) 1988-03-08 1988-03-08 固体撮像装置

Publications (2)

Publication Number Publication Date
DE68918613D1 true DE68918613D1 (de) 1994-11-10
DE68918613T2 DE68918613T2 (de) 1995-03-23

Family

ID=12972191

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918613T Expired - Fee Related DE68918613T2 (de) 1988-03-08 1989-03-08 Festkörperbildaufnahmevorrichtung.

Country Status (5)

Country Link
US (1) US4951105A (de)
EP (1) EP0332173B1 (de)
JP (1) JPH07112054B2 (de)
KR (1) KR920005325B1 (de)
DE (1) DE68918613T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5329149A (en) * 1990-10-12 1994-07-12 Seiko Instruments Inc. Image sensor with non-light-transmissive layer having photosensing windows
US5307169A (en) * 1991-05-07 1994-04-26 Olympus Optical Co., Ltd. Solid-state imaging device using high relative dielectric constant material as insulating film
US5502488A (en) * 1991-05-07 1996-03-26 Olympus Optical Co., Ltd. Solid-state imaging device having a low impedance structure
DE29609523U1 (de) * 1996-05-29 1997-10-02 iC-Haus GmbH, 55294 Bodenheim Optoelektronische integrierte Schaltung
US6815791B1 (en) * 1997-02-10 2004-11-09 Fillfactory Buried, fully depletable, high fill factor photodiodes
US7199410B2 (en) * 1999-12-14 2007-04-03 Cypress Semiconductor Corporation (Belgium) Bvba Pixel structure with improved charge transfer
US5942775A (en) * 1997-04-30 1999-08-24 Lucent Technologies Inc. Photosensing device with improved spectral response and low thermal leakage
KR19990023221A (ko) 1997-08-20 1999-03-25 포만 제프리 엘 감광성 소자, 능동 픽셀 센서 소자, 능동 픽셀 센서 감광성 소자 및 능동 픽셀 센서 장치
US7808022B1 (en) 2005-03-28 2010-10-05 Cypress Semiconductor Corporation Cross talk reduction
US7750958B1 (en) 2005-03-28 2010-07-06 Cypress Semiconductor Corporation Pixel structure
US8476567B2 (en) 2008-09-22 2013-07-02 Semiconductor Components Industries, Llc Active pixel with precharging circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5586172A (en) * 1978-12-22 1980-06-28 Fujitsu Ltd Manufacture of semiconductor pickup device
JPS56131972A (en) * 1980-03-19 1981-10-15 Fujitsu Ltd Photoelectric conversion device
JPS56165472A (en) * 1980-05-23 1981-12-19 Toshiba Corp Solid state image sensor
JPS57124484A (en) * 1981-01-26 1982-08-03 Oki Electric Ind Co Ltd Optical reading sensor
JPS6065565A (ja) * 1983-09-20 1985-04-15 Toshiba Corp 固体撮像素子
JPH0650774B2 (ja) * 1984-06-04 1994-06-29 松下電子工業株式会社 固体撮像装置
JPS62269357A (ja) * 1986-05-19 1987-11-21 Sony Corp 固体撮像装置
JPS6318665A (ja) * 1986-07-11 1988-01-26 Toshiba Corp 固体撮像装置

Also Published As

Publication number Publication date
EP0332173B1 (de) 1994-10-05
JPH07112054B2 (ja) 1995-11-29
KR890015432A (ko) 1989-10-30
US4951105A (en) 1990-08-21
KR920005325B1 (ko) 1992-07-02
EP0332173A2 (de) 1989-09-13
DE68918613T2 (de) 1995-03-23
JPH01227470A (ja) 1989-09-11
EP0332173A3 (de) 1991-03-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee