DE68918467T2 - Photoempfindliches Halbleiterbauelement. - Google Patents

Photoempfindliches Halbleiterbauelement.

Info

Publication number
DE68918467T2
DE68918467T2 DE68918467T DE68918467T DE68918467T2 DE 68918467 T2 DE68918467 T2 DE 68918467T2 DE 68918467 T DE68918467 T DE 68918467T DE 68918467 T DE68918467 T DE 68918467T DE 68918467 T2 DE68918467 T2 DE 68918467T2
Authority
DE
Germany
Prior art keywords
light
sensible semiconductor
semiconductor device
distance
photosensitive semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68918467T
Other languages
English (en)
Other versions
DE68918467D1 (de
Inventor
Eiichi Yoshida
Tomoyoshi Zenki
Satoru Murakami
Minori Yamaguchi
Takehisa Nakayama
Yoshihisa Tawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Application granted granted Critical
Publication of DE68918467D1 publication Critical patent/DE68918467D1/de
Publication of DE68918467T2 publication Critical patent/DE68918467T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/161—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Electronic Switches (AREA)
  • Hybrid Cells (AREA)
DE68918467T 1988-01-12 1989-01-12 Photoempfindliches Halbleiterbauelement. Expired - Fee Related DE68918467T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63005481A JPH01181577A (ja) 1988-01-12 1988-01-12 光半導体素子

Publications (2)

Publication Number Publication Date
DE68918467D1 DE68918467D1 (de) 1994-11-03
DE68918467T2 true DE68918467T2 (de) 1995-03-02

Family

ID=11612436

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918467T Expired - Fee Related DE68918467T2 (de) 1988-01-12 1989-01-12 Photoempfindliches Halbleiterbauelement.

Country Status (5)

Country Link
US (1) US5128736A (de)
EP (1) EP0324484B1 (de)
JP (1) JPH01181577A (de)
AT (1) ATE112417T1 (de)
DE (1) DE68918467T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2655497A1 (fr) * 1989-12-01 1991-06-07 Telecommunications Sa Systeme de transmission de messages.
JPH076788B2 (ja) * 1990-03-02 1995-01-30 株式会社ミツトヨ 太陽電池付き携帯型測定器
US5928437A (en) * 1995-02-09 1999-07-27 The Boeing Company Microarray for efficient energy generation for satellites
GB9524483D0 (en) * 1995-11-30 1996-01-31 Philips Electronics Nv Light sensing array device and apparatus incorporating such
US5990994A (en) * 1997-10-30 1999-11-23 Eastman Kodak Company First and second light sensitive conductive layers for use in image displays
US6441297B1 (en) * 1998-03-13 2002-08-27 Steffen Keller Solar cell arrangement
US6633058B1 (en) 1999-07-26 2003-10-14 Dalsa, Inc. Variable reticulation time delay and integrate sensor
DE19954259B4 (de) * 1999-11-11 2005-09-15 Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg Dünnschicht-Photovoltaikmodul mit integrierter Flachantennenstruktur
EP2015371A1 (de) * 2007-07-09 2009-01-14 British Telecommunications Public Limited Company Umwandlung optischer Energie
JP4411338B2 (ja) * 2007-07-13 2010-02-10 シャープ株式会社 薄膜太陽電池モジュール
GB0807211D0 (en) * 2008-04-21 2008-05-28 Univ Denmark Tech Dtu Photvolotaic device
JP6326871B2 (ja) * 2014-03-06 2018-05-23 セイコーエプソン株式会社 発電装置、時計および発電装置の製造方法
JP2016086098A (ja) * 2014-10-27 2016-05-19 パナソニックＩｐマネジメント株式会社 光結合装置
CN104733549B (zh) * 2015-03-25 2017-04-12 江苏武进汉能光伏有限公司 一种提高薄膜太阳能电池功率的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4078243A (en) * 1975-12-12 1978-03-07 International Business Machines Corporation Phototransistor array having uniform current response and method of manufacture
US4268843A (en) * 1979-02-21 1981-05-19 General Electric Company Solid state relay
JPS5678180A (en) * 1979-11-30 1981-06-26 Hitachi Ltd Light receiving device
US4366377A (en) * 1980-09-29 1982-12-28 Mcdonnell Douglas Corporation Dual sensitivity optical sensor
JPS57184937A (en) * 1981-05-08 1982-11-13 Omron Tateisi Electronics Co Color discriminating element
JPS59121982A (ja) * 1982-12-28 1984-07-14 Matsushita Electric Works Ltd 太陽電池装置
US4918506A (en) * 1985-09-13 1990-04-17 Fairchild Camera & Instrument Corporation Selectable resolution line-scan image sensor
GB2203895B (en) * 1987-03-25 1990-05-09 Matsushita Electric Works Ltd Light receiving element

Also Published As

Publication number Publication date
EP0324484B1 (de) 1994-09-28
DE68918467D1 (de) 1994-11-03
EP0324484A3 (en) 1990-10-10
EP0324484A2 (de) 1989-07-19
ATE112417T1 (de) 1994-10-15
US5128736A (en) 1992-07-07
JPH01181577A (ja) 1989-07-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee