DE68914963D1 - Radiofrequenzquadrupolbeschleunigung mit Aussenresonanzkreis. - Google Patents

Radiofrequenzquadrupolbeschleunigung mit Aussenresonanzkreis.

Info

Publication number
DE68914963D1
DE68914963D1 DE68914963T DE68914963T DE68914963D1 DE 68914963 D1 DE68914963 D1 DE 68914963D1 DE 68914963 T DE68914963 T DE 68914963T DE 68914963 T DE68914963 T DE 68914963T DE 68914963 D1 DE68914963 D1 DE 68914963D1
Authority
DE
Germany
Prior art keywords
radio frequency
resonance circuit
external resonance
frequency quadrupole
acceleration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68914963T
Other languages
English (en)
Other versions
DE68914963T2 (de
Inventor
Katsumi Tokiguchi
Kensuke Amemiya
Noriyuki Sakudo
Takayoshi Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Publication of DE68914963D1 publication Critical patent/DE68914963D1/de
Application granted granted Critical
Publication of DE68914963T2 publication Critical patent/DE68914963T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/02Circuits or systems for supplying or feeding radio-frequency energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
DE68914963T 1988-11-24 1989-11-24 Radiofrequenzquadrupolbeschleunigung mit Aussenresonanzkreis. Expired - Fee Related DE68914963T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63294775A JPH061678B2 (ja) 1988-11-24 1988-11-24 外部共振回路型rfq加速器

Publications (2)

Publication Number Publication Date
DE68914963D1 true DE68914963D1 (de) 1994-06-01
DE68914963T2 DE68914963T2 (de) 1994-10-20

Family

ID=17812133

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68914963T Expired - Fee Related DE68914963T2 (de) 1988-11-24 1989-11-24 Radiofrequenzquadrupolbeschleunigung mit Aussenresonanzkreis.

Country Status (4)

Country Link
US (1) US5086256A (de)
EP (1) EP0375169B1 (de)
JP (1) JPH061678B2 (de)
DE (1) DE68914963T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5189302A (en) * 1991-10-28 1993-02-23 The United States Of America As Represented By The United States Department Of Energy Small system for tritium accelerator mass spectrometry
JP2863962B2 (ja) * 1992-04-10 1999-03-03 株式会社日立製作所 イオン打ち込み装置
US5504341A (en) * 1995-02-17 1996-04-02 Zimec Consulting, Inc. Producing RF electric fields suitable for accelerating atomic and molecular ions in an ion implantation system
US5914494A (en) * 1996-03-27 1999-06-22 Thermoceramix, Llc Arc chamber for an ion implantation system
US6239440B1 (en) 1996-03-27 2001-05-29 Thermoceramix, L.L.C. Arc chamber for an ion implantation system
US6022258A (en) * 1996-03-27 2000-02-08 Thermoceramix, Llc ARC chamber for an ion implantation system
US5857889A (en) * 1996-03-27 1999-01-12 Thermoceramix, Llc Arc Chamber for an ion implantation system
TW490703B (en) * 1999-12-13 2002-06-11 Axcelis Tech Inc Diamond-like coated component in an ion implanter for reduced x-ray emissions
US6291828B1 (en) 1999-12-21 2001-09-18 Axchlisrtechnologies, Inc. Glass-like insulator for electrically isolating electrodes from ion implanter housing
JP4514911B2 (ja) * 2000-07-19 2010-07-28 東京エレクトロン株式会社 プラズマ処理装置
JP4235586B2 (ja) 2004-06-02 2009-03-11 デュプロ精工株式会社 給紙装置
US8907295B2 (en) * 2012-08-01 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Hybrid electrostatic lens with increased natural frequency
CN105120590B (zh) * 2015-09-11 2018-07-24 北京大学 一种医用放射性同位素生产系统
US10383205B2 (en) * 2016-05-04 2019-08-13 Cornell University Wafer-based charged particle accelerator, wafer components, methods, and applications
JP6785189B2 (ja) * 2017-05-31 2020-11-18 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入方法
JP6785188B2 (ja) * 2017-05-31 2020-11-18 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665245A (en) * 1969-10-27 1972-05-23 Research Corp Quadrupole ionization gauge
US3793063A (en) * 1971-02-22 1974-02-19 Bendix Corp Method of making electrodes for quadrupole type mass spectrometers
US4108751A (en) * 1977-06-06 1978-08-22 King William J Ion beam implantation-sputtering
US4135094A (en) * 1977-07-27 1979-01-16 E. I. Du Pont De Nemours And Company Method and apparatus for rejuvenating ion sources
US4330384A (en) * 1978-10-27 1982-05-18 Hitachi, Ltd. Process for plasma etching
US4234791A (en) * 1978-11-13 1980-11-18 Research Corporation Tandem quadrupole mass spectrometer for selected ion fragmentation studies and low energy collision induced dissociator therefor
US4266127A (en) * 1978-12-01 1981-05-05 Cherng Chang Mass spectrometer for chemical ionization and electron impact ionization operation
US4494040A (en) * 1982-10-19 1985-01-15 The United States Of America As Represented By The United States Department Of Energy Radio frequency quadrupole resonator for linear accelerator
JPH0612661B2 (ja) * 1983-12-02 1994-02-16 株式会社日立製作所 イオン打込み装置
JPS60115199A (ja) * 1983-11-28 1985-06-21 株式会社日立製作所 四重極粒子加速器
WO1985002489A1 (en) * 1983-11-28 1985-06-06 Hitachi, Ltd. Quadrupole particle accelerator
US4755670A (en) * 1986-10-01 1988-07-05 Finnigan Corporation Fourtier transform quadrupole mass spectrometer and method
US4867939A (en) * 1987-04-03 1989-09-19 Deutch Bernhard I Process for preparing antihydrogen
US4792687A (en) * 1987-04-30 1988-12-20 Mobley Richard M Freeman ion source
US4843034A (en) * 1987-06-12 1989-06-27 Massachusetts Institute Of Technology Fabrication of interlayer conductive paths in integrated circuits
US4937206A (en) * 1989-07-10 1990-06-26 Applied Materials, Inc. Method and apparatus for preventing cross contamination of species during the processing of semiconductor wafers

Also Published As

Publication number Publication date
JPH02142046A (ja) 1990-05-31
US5086256A (en) 1992-02-04
EP0375169B1 (de) 1994-04-27
JPH061678B2 (ja) 1994-01-05
DE68914963T2 (de) 1994-10-20
EP0375169A1 (de) 1990-06-27

Similar Documents

Publication Publication Date Title
FI844514L (fi) Radiofrekvensfaeltspole foer nmr.
DE69016850D1 (de) Lade-Entladeschaltung.
NO883710L (no) Radiofrekvensskjermet hybridkrets.
DE68914963D1 (de) Radiofrequenzquadrupolbeschleunigung mit Aussenresonanzkreis.
DE68912531D1 (de) Radioempfänger.
FI853150A0 (fi) Radiofrekvensfaelt foer nmr.
DE3884030D1 (de) Rauscharmer magnetisch abgestimmter Resonanzkreis.
DE68903578D1 (de) Passivfrequenzstandard.
NO900183D0 (no) Magnetkrets.
NO885755L (no) Multifrekvensantenne.
DE68922506T2 (de) Frequenzteilerschaltung.
DE69022126T2 (de) Frequenzteiler-Schaltung.
NO900906L (no) Radiofrekvensenergi-deteksjonskrets.
NO901464L (no) Radiofrekvens-begrenserkrets.
DE69024687D1 (de) Automatische Frequenzabstimmungsschaltung
DE3854309D1 (de) Frequenz-Demodulationsschaltung.
DE69032836T2 (de) Frequenzmodulatorschaltung mit VCO
DE68921125T2 (de) Frequenzdemodulationsschaltung.
DE69000100D1 (de) Integrierte schaltung mit veraenderlicher taktfrequenz.
KR910013225U (ko) 저주파 알씨 발진회로
DE69031827D1 (de) Abstimmdetektorschaltung
DE69011456T2 (de) Sendeantenne mit elektronischer Schaltung.
KR880013506U (ko) 동일조작 스위치에 의한 테이프 조작 및 라디오 선국회로
DE3785457T2 (de) Stromdetektorschaltung mit erweitertem frequenzbereich.
IT8821841A0 (it) Circuito di ricerca di radio frequenza.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee