DE60335682D1 - Herstellungsmethode für eine Kohlenstoffnanoröhrchenanordnung - Google Patents

Herstellungsmethode für eine Kohlenstoffnanoröhrchenanordnung

Info

Publication number
DE60335682D1
DE60335682D1 DE60335682T DE60335682T DE60335682D1 DE 60335682 D1 DE60335682 D1 DE 60335682D1 DE 60335682 T DE60335682 T DE 60335682T DE 60335682 T DE60335682 T DE 60335682T DE 60335682 D1 DE60335682 D1 DE 60335682D1
Authority
DE
Germany
Prior art keywords
manufacturing
carbon nanotube
nanotube assembly
assembly
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60335682T
Other languages
English (en)
Inventor
Kazunaga Horiuchi
Masaaki Shimizu
Nobuyuki Aoki
Yuichi Ochiai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Application granted granted Critical
Publication of DE60335682D1 publication Critical patent/DE60335682D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/868—Scanning probe structure with optical means
    • Y10S977/869—Optical microscope
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/873—Tip holder
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49099—Coating resistive material on a base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49174—Assembling terminal to elongated conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Micromachines (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Hybrid Cells (AREA)
DE60335682T 2002-02-05 2003-02-05 Herstellungsmethode für eine Kohlenstoffnanoröhrchenanordnung Expired - Lifetime DE60335682D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002028637A JP4259023B2 (ja) 2002-02-05 2002-02-05 カーボンナノチューブデバイスの作製方法、およびカーボンナノチューブデバイス

Publications (1)

Publication Number Publication Date
DE60335682D1 true DE60335682D1 (de) 2011-02-24

Family

ID=19192443

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60335682T Expired - Lifetime DE60335682D1 (de) 2002-02-05 2003-02-05 Herstellungsmethode für eine Kohlenstoffnanoröhrchenanordnung

Country Status (5)

Country Link
US (1) US7076871B2 (de)
EP (1) EP1333508B1 (de)
JP (1) JP4259023B2 (de)
CN (1) CN1274583C (de)
DE (1) DE60335682D1 (de)

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US9056783B2 (en) 1998-12-17 2015-06-16 Hach Company System for monitoring discharges into a waste water collection system
US8958917B2 (en) 1998-12-17 2015-02-17 Hach Company Method and system for remote monitoring of fluid quality and treatment
US7454295B2 (en) 1998-12-17 2008-11-18 The Watereye Corporation Anti-terrorism water quality monitoring system
US8920619B2 (en) 2003-03-19 2014-12-30 Hach Company Carbon nanotube sensor
KR100830024B1 (ko) 2004-03-03 2008-05-15 크레이튼 폴리머즈 리서치 비.브이. 흐름성 및 탄성이 높은 블록 공중합체
US7312155B2 (en) * 2004-04-07 2007-12-25 Intel Corporation Forming self-aligned nano-electrodes
US7666465B2 (en) * 2004-12-29 2010-02-23 Intel Corporation Introducing nanotubes in trenches and structures formed thereby
US7598516B2 (en) * 2005-01-07 2009-10-06 International Business Machines Corporation Self-aligned process for nanotube/nanowire FETs
US7055396B1 (en) * 2005-03-28 2006-06-06 George Fischer Signet, Inc. Sensor assembly for magnetic flowmeter and method of manufacture
WO2007022265A2 (en) * 2005-08-16 2007-02-22 Imago Scientific Instruments Corporation Atom probes, atom probe specimens, and associated methods
CN101252145B (zh) * 2007-04-06 2011-01-19 北京大学 一种碳纳米管纳电子器件及其制备方法
TW200901592A (en) * 2007-06-27 2009-01-01 Inpaq Technology Co Ltd Over voltage protection device with air-gap
US7932792B2 (en) * 2008-02-22 2011-04-26 Nokia Corporation Nanotube device
US8070929B2 (en) * 2008-08-21 2011-12-06 Snu R&Db Foundation Catalyst particles on a tip
CN101771916B (zh) * 2008-12-30 2013-01-09 北京富纳特创新科技有限公司 发声装置
CN102544804B (zh) * 2010-12-16 2015-08-12 富士康(昆山)电脑接插件有限公司 电连接器及其制造方法
WO2013028782A1 (en) * 2011-08-23 2013-02-28 Kansas State University Research Foundation Electrochemically-grown nanowires and uses thereof
US10319926B2 (en) 2015-11-05 2019-06-11 International Business Machines Corporation End-bonded metal contacts on carbon nanotubes
US10665799B2 (en) * 2016-07-14 2020-05-26 International Business Machines Corporation N-type end-bonded metal contacts for carbon nanotube transistors
US10665798B2 (en) * 2016-07-14 2020-05-26 International Business Machines Corporation Carbon nanotube transistor and logic with end-bonded metal contacts
CN111092155B (zh) * 2019-10-28 2023-01-17 温州大学 含金属纳米粒子单壁碳纳米管分子内结及其制备方法和应用
CN111261473B (zh) * 2020-03-31 2021-06-04 中山大学 一种单根一维纳米结构场发射冷阴极的制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0905737B1 (de) * 1997-09-30 2004-04-28 Noritake Co., Ltd. Elektronen emittierende Quelle
WO2000033052A1 (en) * 1998-12-03 2000-06-08 Daiken Chemical Co., Ltd. Electronic device surface signal control probe and method of manufacturing the probe
US6277318B1 (en) * 1999-08-18 2001-08-21 Agere Systems Guardian Corp. Method for fabrication of patterned carbon nanotube films
JP4679004B2 (ja) * 2000-09-26 2011-04-27 新明和工業株式会社 アーク蒸発源装置、その駆動方法、及びイオンプレーティング装置

Also Published As

Publication number Publication date
EP1333508A2 (de) 2003-08-06
US20060123628A1 (en) 2006-06-15
US7076871B2 (en) 2006-07-18
EP1333508A3 (de) 2008-04-02
JP2003229564A (ja) 2003-08-15
EP1333508B1 (de) 2011-01-12
JP4259023B2 (ja) 2009-04-30
CN1274583C (zh) 2006-09-13
CN1436717A (zh) 2003-08-20

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