DE60335431D1 - Eine zwischenzeilig-übertragende ladungsgekoppelte Anordnung mit erweitertem Dynamikbereich - Google Patents

Eine zwischenzeilig-übertragende ladungsgekoppelte Anordnung mit erweitertem Dynamikbereich

Info

Publication number
DE60335431D1
DE60335431D1 DE60335431T DE60335431T DE60335431D1 DE 60335431 D1 DE60335431 D1 DE 60335431D1 DE 60335431 T DE60335431 T DE 60335431T DE 60335431 T DE60335431 T DE 60335431T DE 60335431 D1 DE60335431 D1 DE 60335431D1
Authority
DE
Germany
Prior art keywords
inter
dynamic range
coupled device
charge coupled
extended dynamic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60335431T
Other languages
English (en)
Inventor
Joseph R Summa
Christopher Parks
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE60335431D1 publication Critical patent/DE60335431D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE60335431T 2002-03-15 2003-03-03 Eine zwischenzeilig-übertragende ladungsgekoppelte Anordnung mit erweitertem Dynamikbereich Expired - Lifetime DE60335431D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/098,859 US6777661B2 (en) 2002-03-15 2002-03-15 Interlined charge-coupled device having an extended dynamic range

Publications (1)

Publication Number Publication Date
DE60335431D1 true DE60335431D1 (de) 2011-02-03

Family

ID=28039455

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60335431T Expired - Lifetime DE60335431D1 (de) 2002-03-15 2003-03-03 Eine zwischenzeilig-übertragende ladungsgekoppelte Anordnung mit erweitertem Dynamikbereich

Country Status (4)

Country Link
US (1) US6777661B2 (de)
EP (1) EP1351311B1 (de)
JP (1) JP4365117B2 (de)
DE (1) DE60335431D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6909554B2 (en) * 2000-12-27 2005-06-21 Finisar Corporation Wafer integration of micro-optics
JP4136611B2 (ja) * 2002-11-07 2008-08-20 富士フイルム株式会社 固体撮像素子
JP4264251B2 (ja) 2002-12-09 2009-05-13 富士フイルム株式会社 固体撮像装置とその動作方法
US7105793B2 (en) 2003-07-02 2006-09-12 Micron Technology, Inc. CMOS pixels for ALC and CDS and methods of forming the same
US20050109916A1 (en) * 2003-11-21 2005-05-26 Eastman Kodak Company Large pixel micro-lens
JP2005268356A (ja) * 2004-03-17 2005-09-29 Fuji Photo Film Co Ltd 固体撮像素子
US7276720B2 (en) * 2004-07-19 2007-10-02 Helicos Biosciences Corporation Apparatus and methods for analyzing samples
US20060012793A1 (en) * 2004-07-19 2006-01-19 Helicos Biosciences Corporation Apparatus and methods for analyzing samples
JP4882224B2 (ja) * 2004-11-26 2012-02-22 ソニー株式会社 固体撮像装置の製造方法
US20060286566A1 (en) * 2005-02-03 2006-12-21 Helicos Biosciences Corporation Detecting apparent mutations in nucleic acid sequences
JP5584982B2 (ja) * 2009-02-09 2014-09-10 ソニー株式会社 固体撮像素子およびカメラシステム
US7964840B2 (en) * 2008-06-19 2011-06-21 Omnivision Technologies, Inc. High dynamic range image sensor including polarizer and microlens
US20100149379A1 (en) * 2008-12-16 2010-06-17 Summa Joseph R Image sensor with three-dimensional interconnect and ccd
JP5422362B2 (ja) * 2009-12-15 2014-02-19 株式会社東芝 固体撮像装置
US20130258144A1 (en) * 2012-03-28 2013-10-03 Omnivision Technologies, Inc. System, apparatus and method for dark current correction
WO2019097839A1 (ja) * 2017-11-15 2019-05-23 株式会社カネカ 光電変換素子および光電変換装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175471A (ja) 1991-12-26 1993-07-13 Toshiba Corp 固体撮像装置
JP3273080B2 (ja) * 1992-10-30 2002-04-08 シャープ株式会社 固体撮像装置
KR0183761B1 (ko) * 1995-11-29 1999-03-20 김광호 고체촬상소자 및 그 제조방법
JPH09252107A (ja) * 1996-03-15 1997-09-22 Sony Corp 固体撮像装置
JP2917920B2 (ja) * 1996-06-27 1999-07-12 日本電気株式会社 固体撮像装置およびその製造方法
JPH10270672A (ja) * 1997-03-25 1998-10-09 Sony Corp 固体撮像素子
JP4384288B2 (ja) * 1999-05-27 2009-12-16 オリンパス株式会社 焦点検出装置
US6433326B1 (en) * 1999-07-14 2002-08-13 Sarnoff Corporation CMOS/CCD line transfer imager with low dark current

Also Published As

Publication number Publication date
US20030173497A1 (en) 2003-09-18
JP4365117B2 (ja) 2009-11-18
JP2003298041A (ja) 2003-10-17
EP1351311A3 (de) 2004-07-21
EP1351311A2 (de) 2003-10-08
US6777661B2 (en) 2004-08-17
EP1351311B1 (de) 2010-12-22

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