DE60323259D1 - Sdram adressenabbildung optimiert für zwei-dimensionalen zugriff - Google Patents

Sdram adressenabbildung optimiert für zwei-dimensionalen zugriff

Info

Publication number
DE60323259D1
DE60323259D1 DE60323259T DE60323259T DE60323259D1 DE 60323259 D1 DE60323259 D1 DE 60323259D1 DE 60323259 T DE60323259 T DE 60323259T DE 60323259 T DE60323259 T DE 60323259T DE 60323259 D1 DE60323259 D1 DE 60323259D1
Authority
DE
Germany
Prior art keywords
memories
sdram
data
chip memory
bottlenecks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60323259T
Other languages
English (en)
Inventor
De Waerdt Jan-Willem Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60323259D1 publication Critical patent/DE60323259D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0207—Addressing or allocation; Relocation with multidimensional access, e.g. row/column, matrix
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1042—Read-write modes for single port memories, i.e. having either a random port or a serial port using interleaving techniques, i.e. read-write of one part of the memory while preparing another part

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Surgical Instruments (AREA)
  • Debugging And Monitoring (AREA)
  • Vehicle Body Suspensions (AREA)
DE60323259T 2002-11-20 2003-11-14 Sdram adressenabbildung optimiert für zwei-dimensionalen zugriff Expired - Lifetime DE60323259D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42754202P 2002-11-20 2002-11-20
PCT/IB2003/005138 WO2004047112A1 (en) 2002-11-20 2003-11-14 Sdram address mapping optimized for two-dimensional access

Publications (1)

Publication Number Publication Date
DE60323259D1 true DE60323259D1 (de) 2008-10-09

Family

ID=32326556

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60323259T Expired - Lifetime DE60323259D1 (de) 2002-11-20 2003-11-14 Sdram adressenabbildung optimiert für zwei-dimensionalen zugriff

Country Status (9)

Country Link
US (1) US7221612B2 (de)
EP (1) EP1568036B1 (de)
KR (1) KR20050085056A (de)
CN (1) CN100550189C (de)
AT (1) ATE406658T1 (de)
AU (1) AU2003280051A1 (de)
DE (1) DE60323259D1 (de)
TW (1) TW200418046A (de)
WO (1) WO2004047112A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9087036B1 (en) 2004-08-12 2015-07-21 Sonics, Inc. Methods and apparatuses for time annotated transaction level modeling
TWI254947B (en) * 2004-03-28 2006-05-11 Mediatek Inc Data managing method and data access system for storing all management data in a management bank of a non-volatile memory
US8868397B2 (en) * 2006-11-20 2014-10-21 Sonics, Inc. Transaction co-validation across abstraction layers
US9292436B2 (en) 2007-06-25 2016-03-22 Sonics, Inc. Various methods and apparatus to support transactions whose data address sequence within that transaction crosses an interleaved channel address boundary
US8438320B2 (en) * 2007-06-25 2013-05-07 Sonics, Inc. Various methods and apparatus for address tiling and channel interleaving throughout the integrated system
KR101673233B1 (ko) 2010-05-11 2016-11-17 삼성전자주식회사 트랜잭션 분할 장치 및 방법
US8868826B2 (en) 2010-05-20 2014-10-21 Cisco Technology, Inc. Facilitating communication between memory devices and CPUs
CN101883041B (zh) * 2010-06-29 2015-07-22 中兴通讯股份有限公司 存储转发系统及其报文存储方法
US8972995B2 (en) 2010-08-06 2015-03-03 Sonics, Inc. Apparatus and methods to concurrently perform per-thread as well as per-tag memory access scheduling within a thread and across two or more threads
CN102662886A (zh) * 2012-04-07 2012-09-12 山东华芯半导体有限公司 SoC地址映像的优化方法
CN104156907A (zh) * 2014-08-14 2014-11-19 西安电子科技大学 一种基于fpga的红外预处理存储系统及存储方法
KR102308780B1 (ko) * 2014-10-31 2021-10-05 삼성전자주식회사 캐시 메모리의 관리 방법 및 그 장치
US9996350B2 (en) * 2014-12-27 2018-06-12 Intel Corporation Hardware apparatuses and methods to prefetch a multidimensional block of elements from a multidimensional array
CN108228492B (zh) * 2016-12-21 2020-11-17 深圳市中兴微电子技术有限公司 一种多通道ddr交织控制方法及装置
WO2018165111A1 (en) 2017-03-06 2018-09-13 Sonics, Inc. An operating point controller for circuit regions in an integrated circuit
US11231769B2 (en) 2017-03-06 2022-01-25 Facebook Technologies, Llc Sequencer-based protocol adapter

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546451A (en) * 1982-02-12 1985-10-08 Metheus Corporation Raster graphics display refresh memory architecture offering rapid access speed
US5148524A (en) * 1988-11-29 1992-09-15 Solbourne Computer, Inc. Dynamic video RAM incorporating on chip vector/image mode line modification
JP3400824B2 (ja) * 1992-11-06 2003-04-28 三菱電機株式会社 半導体記憶装置
US5453957A (en) * 1993-09-17 1995-09-26 Cypress Semiconductor Corp. Memory architecture for burst mode access
JP3904244B2 (ja) * 1993-09-17 2007-04-11 株式会社ルネサステクノロジ シングル・チップ・データ処理装置
DE60042272D1 (de) * 2000-10-06 2009-07-09 St Microelectronics Srl Interne Addressierungsstruktur eines Halbleiterspeichers

Also Published As

Publication number Publication date
CN100550189C (zh) 2009-10-14
TW200418046A (en) 2004-09-16
US20060047890A1 (en) 2006-03-02
WO2004047112A1 (en) 2004-06-03
KR20050085056A (ko) 2005-08-29
CN1714401A (zh) 2005-12-28
EP1568036A1 (de) 2005-08-31
EP1568036B1 (de) 2008-08-27
AU2003280051A1 (en) 2004-06-15
ATE406658T1 (de) 2008-09-15
US7221612B2 (en) 2007-05-22

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