DE60322818D1 - Dreiphasenspeicherzelle - Google Patents
DreiphasenspeicherzelleInfo
- Publication number
- DE60322818D1 DE60322818D1 DE60322818T DE60322818T DE60322818D1 DE 60322818 D1 DE60322818 D1 DE 60322818D1 DE 60322818 T DE60322818 T DE 60322818T DE 60322818 T DE60322818 T DE 60322818T DE 60322818 D1 DE60322818 D1 DE 60322818D1
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- phase memory
- phase
- cell
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0213615A FR2846776A1 (fr) | 2002-10-30 | 2002-10-30 | Cellule memoire a trois etats |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60322818D1 true DE60322818D1 (de) | 2008-09-25 |
Family
ID=32104327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60322818T Expired - Fee Related DE60322818D1 (de) | 2002-10-30 | 2003-10-16 | Dreiphasenspeicherzelle |
Country Status (5)
Country | Link |
---|---|
US (2) | US7057941B2 (de) |
EP (1) | EP1420416B1 (de) |
JP (1) | JP2004164834A (de) |
DE (1) | DE60322818D1 (de) |
FR (1) | FR2846776A1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2846776A1 (fr) * | 2002-10-30 | 2004-05-07 | St Microelectronics Sa | Cellule memoire a trois etats |
US7924597B2 (en) * | 2007-10-31 | 2011-04-12 | Hewlett-Packard Development Company, L.P. | Data storage in circuit elements with changed resistance |
US9128869B2 (en) * | 2011-09-29 | 2015-09-08 | Micron Technology, Inc. | Systems and methods involving managing a problematic memory cell |
US10836400B2 (en) * | 2017-12-19 | 2020-11-17 | Micron Technology, Inc. | Implementing safety measures in applications |
CN115240735A (zh) | 2020-04-06 | 2022-10-25 | 昕原半导体(上海)有限公司 | 利用芯片上电阻存储器阵列的不可克隆特性的独特芯片标识符 |
US11823739B2 (en) | 2020-04-06 | 2023-11-21 | Crossbar, Inc. | Physically unclonable function (PUF) generation involving high side programming of bits |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US459059A (en) * | 1891-09-08 | Fastening device | ||
JPS5267532A (en) * | 1975-12-03 | 1977-06-04 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory unit |
US4404581A (en) * | 1980-12-15 | 1983-09-13 | Rockwell International Corporation | ROM With redundant ROM cells employing a highly resistive polysilicon film for programming the cells |
US4590589A (en) * | 1982-12-21 | 1986-05-20 | Zoran Corporation | Electrically programmable read only memory |
US5334880A (en) * | 1991-04-30 | 1994-08-02 | International Business Machines Corporation | Low voltage programmable storage element |
US5497119A (en) * | 1994-06-01 | 1996-03-05 | Intel Corporation | High precision voltage regulation circuit for programming multilevel flash memory |
US5761110A (en) * | 1996-12-23 | 1998-06-02 | Lsi Logic Corporation | Memory cell capable of storing more than two logic states by using programmable resistances |
US5787042A (en) * | 1997-03-18 | 1998-07-28 | Micron Technology, Inc. | Method and apparatus for reading out a programmable resistor memory |
US5898617A (en) * | 1997-05-21 | 1999-04-27 | Motorola, Inc. | Sensing circuit and method |
DE19947118C1 (de) * | 1999-09-30 | 2001-03-15 | Infineon Technologies Ag | Verfahren und Schaltungsanordnung zum Bewerten des Informationsgehalts einer Speicherzelle |
IT1311440B1 (it) * | 1999-11-16 | 2002-03-12 | St Microelectronics Srl | Generatore di tensione commutabile fra primi e secondi valori ditensione fra loro alternati, in particolare per la programmazione di |
US6314014B1 (en) * | 1999-12-16 | 2001-11-06 | Ovonyx, Inc. | Programmable resistance memory arrays with reference cells |
US20010033196A1 (en) * | 2000-01-20 | 2001-10-25 | National Instruments Corporation | State variable filter including a programmable variable resistor |
US6252471B1 (en) * | 2000-09-29 | 2001-06-26 | Motorola Inc. | Programmable oscillator using magnetoresistive memory technology |
US6272040B1 (en) * | 2000-09-29 | 2001-08-07 | Motorola, Inc. | System and method for programming a magnetoresistive memory device |
US6721203B1 (en) * | 2001-02-23 | 2004-04-13 | Western Digital (Fremont), Inc. | Designs of reference cells for magnetic tunnel junction (MTJ) MRAM |
US6693826B1 (en) * | 2001-07-30 | 2004-02-17 | Iowa State University Research Foundation, Inc. | Magnetic memory sensing method and apparatus |
US6590807B2 (en) * | 2001-08-02 | 2003-07-08 | Intel Corporation | Method for reading a structural phase-change memory |
US6483734B1 (en) * | 2001-11-26 | 2002-11-19 | Hewlett Packard Company | Memory device having memory cells capable of four states |
FR2836751A1 (fr) * | 2002-02-11 | 2003-09-05 | St Microelectronics Sa | Cellule memoire a programmation unique non destructrice |
FR2835947A1 (fr) * | 2002-02-11 | 2003-08-15 | St Microelectronics Sa | Extraction d'un code binaire a partir de parametres physiques d'un circuit integre |
US6798684B2 (en) * | 2002-04-04 | 2004-09-28 | Broadcom Corporation | Methods and systems for programmable memory using silicided poly-silicon fuses |
US6574129B1 (en) * | 2002-04-30 | 2003-06-03 | Hewlett-Packard Development Company, L.P. | Resistive cross point memory cell arrays having a cross-couple latch sense amplifier |
US6781860B2 (en) * | 2002-05-01 | 2004-08-24 | Ovonyx, Inc. | High voltage row and column driver for programmable resistance memory |
US6621729B1 (en) * | 2002-06-28 | 2003-09-16 | Motorola, Inc. | Sense amplifier incorporating a symmetric midpoint reference |
US6600690B1 (en) * | 2002-06-28 | 2003-07-29 | Motorola, Inc. | Sense amplifier for a memory having at least two distinct resistance states |
US6829188B2 (en) * | 2002-08-19 | 2004-12-07 | Micron Technology, Inc. | Dual loop sensing scheme for resistive memory elements |
US6831856B2 (en) * | 2002-09-23 | 2004-12-14 | Ovonyx, Inc. | Method of data storage using only amorphous phase of electrically programmable phase-change memory element |
DE10246741B4 (de) * | 2002-10-07 | 2007-04-19 | Infineon Technologies Ag | Verfahren und Halbleitereinrichtung zum Abgleich von Schnittstelleneinrichtungen |
FR2846462A1 (fr) * | 2002-10-28 | 2004-04-30 | St Microelectronics Sa | Compteur monotone croissant en circuit integre |
FR2846776A1 (fr) * | 2002-10-30 | 2004-05-07 | St Microelectronics Sa | Cellule memoire a trois etats |
EP1416497A3 (de) * | 2002-10-31 | 2004-07-21 | STMicroelectronics S.A. | Einmal programmierbare Multibitspeicherzellen |
FR2846791A1 (fr) * | 2002-10-31 | 2004-05-07 | St Microelectronics Sa | Element resistif en silicium polycristallin commandable en diminution irreversible de sa valeur |
US6813177B2 (en) * | 2002-12-13 | 2004-11-02 | Ovoynx, Inc. | Method and system to store information |
US6870784B2 (en) * | 2003-05-28 | 2005-03-22 | Micron Technology, Inc. | Integrated charge sensing scheme for resistive memories |
US7291878B2 (en) * | 2003-06-03 | 2007-11-06 | Hitachi Global Storage Technologies Netherlands B.V. | Ultra low-cost solid-state memory |
-
2002
- 2002-10-30 FR FR0213615A patent/FR2846776A1/fr active Pending
-
2003
- 2003-10-16 EP EP03300161A patent/EP1420416B1/de not_active Expired - Fee Related
- 2003-10-16 DE DE60322818T patent/DE60322818D1/de not_active Expired - Fee Related
- 2003-10-29 JP JP2003369232A patent/JP2004164834A/ja not_active Withdrawn
- 2003-10-30 US US10/697,957 patent/US7057941B2/en not_active Expired - Fee Related
-
2006
- 2006-02-09 US US11/350,575 patent/US7453717B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040136238A1 (en) | 2004-07-15 |
JP2004164834A (ja) | 2004-06-10 |
EP1420416A1 (de) | 2004-05-19 |
US7453717B2 (en) | 2008-11-18 |
EP1420416B1 (de) | 2008-08-13 |
US7057941B2 (en) | 2006-06-06 |
US20060126373A1 (en) | 2006-06-15 |
FR2846776A1 (fr) | 2004-05-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |