DE60305049D1 - Verfahren zur Herstellung von Elektroden auf einem II-VI-Verbindungshalbleitermaterial - Google Patents

Verfahren zur Herstellung von Elektroden auf einem II-VI-Verbindungshalbleitermaterial

Info

Publication number
DE60305049D1
DE60305049D1 DE60305049T DE60305049T DE60305049D1 DE 60305049 D1 DE60305049 D1 DE 60305049D1 DE 60305049 T DE60305049 T DE 60305049T DE 60305049 T DE60305049 T DE 60305049T DE 60305049 D1 DE60305049 D1 DE 60305049D1
Authority
DE
Germany
Prior art keywords
electrodes
preparation
semiconductor material
compound semiconductor
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60305049T
Other languages
English (en)
Other versions
DE60305049T2 (de
Inventor
Gerard Petroz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE60305049D1 publication Critical patent/DE60305049D1/de
Publication of DE60305049T2 publication Critical patent/DE60305049T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Weting (AREA)
  • Measurement Of Radiation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
DE60305049T 2002-09-20 2003-09-19 Verfahren zur Herstellung von Elektroden auf einem II-VI-Verbindungshalbleitermaterial Expired - Lifetime DE60305049T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0211675 2002-09-20
FR0211675A FR2844918B1 (fr) 2002-09-20 2002-09-20 Procede de fabrication d'electrodes sur un materiau semi- conducteur de type ii-vi ou sur un compose de ce materiau
PCT/FR2003/050057 WO2004027854A2 (fr) 2002-09-20 2003-09-19 Procede de fabrication d'electrodes sur un materiau semi-conducteur de type ii-vi

Publications (2)

Publication Number Publication Date
DE60305049D1 true DE60305049D1 (de) 2006-06-08
DE60305049T2 DE60305049T2 (de) 2006-11-30

Family

ID=31970859

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60305049T Expired - Lifetime DE60305049T2 (de) 2002-09-20 2003-09-19 Verfahren zur Herstellung von Elektroden auf einem II-VI-Verbindungshalbleitermaterial

Country Status (5)

Country Link
US (1) US7553746B2 (de)
EP (1) EP1540721B1 (de)
DE (1) DE60305049T2 (de)
FR (1) FR2844918B1 (de)
WO (1) WO2004027854A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100492668C (zh) * 2004-05-25 2009-05-27 中国科学院福建物质结构研究所 一系列半导体材料
CN102140632A (zh) * 2010-12-16 2011-08-03 西北工业大学 在碲化镉、碲锌镉和碲锰镉上化学镀金铂合金电极的方法
DE102011083424B3 (de) * 2011-09-26 2013-01-17 Siemens Ag Röntgenstrahlungsdetektor zur Verwendung in einem CT-System
TWI683428B (zh) 2018-03-29 2020-01-21 日商Ｊｘ金屬股份有限公司 放射線檢測元件、及其製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99205C (de) 1954-12-06
JPH07263751A (ja) * 1994-03-24 1995-10-13 Sharp Corp Ｉｉ−ｖｉ族化合物半導体装置及びその製造方法
EP1258740A2 (de) * 1994-12-23 2002-11-20 Digirad Corporation Halbleiter-Gammastrahlungskamera und medizinisches Bilderzeugungssystem
US5909632A (en) * 1997-09-25 1999-06-01 Midwest Research Institute Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
JP3341763B2 (ja) * 2000-04-27 2002-11-05 住友電気工業株式会社 化合物半導体装置の製造方法および化合物半導体装置の製造装置

Also Published As

Publication number Publication date
US7553746B2 (en) 2009-06-30
EP1540721A2 (de) 2005-06-15
FR2844918A1 (fr) 2004-03-26
FR2844918B1 (fr) 2005-07-01
WO2004027854A3 (fr) 2004-07-08
EP1540721B1 (de) 2006-05-03
US20060121716A1 (en) 2006-06-08
DE60305049T2 (de) 2006-11-30
WO2004027854A2 (fr) 2004-04-01

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