DE60224799D1 - Verfahren und vorrichtung zur kalibration einer gm zelle unter verwendung einer gm replikatzelle - Google Patents

Verfahren und vorrichtung zur kalibration einer gm zelle unter verwendung einer gm replikatzelle

Info

Publication number
DE60224799D1
DE60224799D1 DE60224799T DE60224799T DE60224799D1 DE 60224799 D1 DE60224799 D1 DE 60224799D1 DE 60224799 T DE60224799 T DE 60224799T DE 60224799 T DE60224799 T DE 60224799T DE 60224799 D1 DE60224799 D1 DE 60224799D1
Authority
DE
Germany
Prior art keywords
cell
calibrating
replica
replica cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60224799T
Other languages
English (en)
Other versions
DE60224799T2 (de
Inventor
Sasan Cyrusian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE60224799D1 publication Critical patent/DE60224799D1/de
Publication of DE60224799T2 publication Critical patent/DE60224799T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/10—Calibration or testing
    • H03M1/1009—Calibration
    • H03M1/1014—Calibration at one point of the transfer characteristic, i.e. by adjusting a single reference value, e.g. bias or gain error
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Amplifiers (AREA)
  • Analogue/Digital Conversion (AREA)
DE60224799T 2001-05-25 2002-05-24 Verfahren und vorrichtung zur kalibration einer gm zelle unter verwendung einer gm replikatzelle Expired - Lifetime DE60224799T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US865649 1997-05-30
US09/865,649 US6737919B2 (en) 2001-05-25 2001-05-25 Method and apparatus for calibrating a Gm cell utilizing a replica Gm cell
PCT/US2002/016760 WO2002097980A1 (en) 2001-05-25 2002-05-24 A method and apparatus for calibrating a gm cell utilizing a replica gm cell

Publications (2)

Publication Number Publication Date
DE60224799D1 true DE60224799D1 (de) 2008-03-13
DE60224799T2 DE60224799T2 (de) 2009-01-22

Family

ID=25345953

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60224799T Expired - Lifetime DE60224799T2 (de) 2001-05-25 2002-05-24 Verfahren und vorrichtung zur kalibration einer gm zelle unter verwendung einer gm replikatzelle

Country Status (5)

Country Link
US (2) US6737919B2 (de)
EP (1) EP1397860B1 (de)
CN (1) CN1284299C (de)
DE (1) DE60224799T2 (de)
WO (1) WO2002097980A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6552865B2 (en) * 2001-05-25 2003-04-22 Infineon Technologies Ag Diagnostic system for a read/write channel in a disk drive
US6737919B2 (en) * 2001-05-25 2004-05-18 Infineon Technologies North America Corp. Method and apparatus for calibrating a Gm cell utilizing a replica Gm cell
US7034606B2 (en) * 2004-05-07 2006-04-25 Broadcom Corporation VGA-CTF combination cell for 10 Gb/s serial data receivers
US7394310B2 (en) * 2004-08-31 2008-07-01 Broadcom Corporation System and method for programmable switching characteristics of an analog switch in a transconductance amplifier
US7292102B2 (en) * 2004-09-10 2007-11-06 Broadcom Corporation Gain control scheme independent of process, voltage and temperature
JP4193066B2 (ja) * 2005-04-28 2008-12-10 日本電気株式会社 無線用フィルタ回路およびノイズ低減方法
US7342451B2 (en) * 2005-08-05 2008-03-11 Siemens Medical Soluitions Usa, Inc. System for logarithmically controlling multiple variable gain amplifiers
US7477103B2 (en) * 2005-08-05 2009-01-13 Siemens Medical Solutions Usa, Inc. Amplifier circuit
US7642845B2 (en) 2005-08-26 2010-01-05 Cypress Semiconductor Corporation Circuit for creating tracking transconductors of different types
US7265625B2 (en) * 2005-10-04 2007-09-04 Analog Devices, Inc. Amplifier systems with low-noise, constant-transconductance bias generators
US7403063B2 (en) * 2005-11-23 2008-07-22 Mediatek Inc. Apparatus and method for tuning center frequency of a filter
US20070194838A1 (en) * 2006-02-17 2007-08-23 Sioptical, Inc. Current mirror with improved output impedance at low power supplies
US7909961B2 (en) 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US20080191778A1 (en) * 2007-02-09 2008-08-14 Mediatek Inc. Gm/c tuning circuit and filter using the same
US20090231003A1 (en) * 2008-03-13 2009-09-17 Mediatek Inc. Voltage controlled oscillator and pll and filter using the same
US9450540B2 (en) 2015-01-12 2016-09-20 Qualcomm Incorporated Methods and apparatus for calibrating for transconductance or gain over process or condition variations in differential circuits
CN106774617B (zh) * 2016-12-23 2019-07-19 长沙景美集成电路设计有限公司 一种电流可精准校正网络

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3367143D1 (en) * 1982-07-06 1986-11-27 Texas Instruments Inc Monolithic low noise common-gate amplifier
DE3863040D1 (de) * 1987-09-14 1991-07-04 Philips Nv Verstaerkerschaltung.
US4833422A (en) * 1987-09-24 1989-05-23 Burr-Brown Corporation Programmable gain instrumentation amplifier
US5384501A (en) * 1990-06-15 1995-01-24 Kabushiki Kaisha Toshiba Integration circuit including a differential amplifier having a variable transconductance
EP0695030B1 (de) * 1994-07-29 2001-06-13 STMicroelectronics S.r.l. Transkonduktanzstufe mit gesteuerter Verstärkung
US5612648A (en) * 1995-03-14 1997-03-18 Standard Microsystems Corporation Transconductance-capacitance filter with extended control range
KR19990028799A (ko) * 1996-05-09 1999-04-15 엠. 제이. 엠. 반캄 상호 컨덕턴스가 제어 가능한 축퇴 차동 쌍
IT1313379B1 (it) * 1999-01-18 2002-07-23 St Microelectronics Srl Trasconduttore mos con ampio campo di tarabilita'
US6271688B1 (en) * 1999-06-17 2001-08-07 Stmicroelectronics S.R.L. MOS transconductor with broad trimming range
US6480064B1 (en) * 2001-05-25 2002-11-12 Infineon Technologies Ag Method and apparatus for an efficient low voltage switchable Gm cell
US6737919B2 (en) * 2001-05-25 2004-05-18 Infineon Technologies North America Corp. Method and apparatus for calibrating a Gm cell utilizing a replica Gm cell

Also Published As

Publication number Publication date
US20040140853A1 (en) 2004-07-22
US6737919B2 (en) 2004-05-18
CN1284299C (zh) 2006-11-08
US6853249B2 (en) 2005-02-08
WO2002097980A1 (en) 2002-12-05
CN1520636A (zh) 2004-08-11
EP1397860A1 (de) 2004-03-17
DE60224799T2 (de) 2009-01-22
EP1397860B1 (de) 2008-01-23
US20020175765A1 (en) 2002-11-28

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