DE60217526D1 - Tertiäre cam-zelle - Google Patents

Tertiäre cam-zelle

Info

Publication number
DE60217526D1
DE60217526D1 DE60217526T DE60217526T DE60217526D1 DE 60217526 D1 DE60217526 D1 DE 60217526D1 DE 60217526 T DE60217526 T DE 60217526T DE 60217526 T DE60217526 T DE 60217526T DE 60217526 D1 DE60217526 D1 DE 60217526D1
Authority
DE
Germany
Prior art keywords
cam cell
tertiary cam
tertiary
cell
cam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60217526T
Other languages
English (en)
Other versions
DE60217526T2 (de
Inventor
Zvi Regev
Alon Regev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE60217526D1 publication Critical patent/DE60217526D1/de
Application granted granted Critical
Publication of DE60217526T2 publication Critical patent/DE60217526T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C15/00Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C15/00Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
DE60217526T 2001-09-25 2002-09-23 Tertiäre cam-zelle Expired - Lifetime DE60217526T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US32446201P 2001-09-25 2001-09-25
US324462P 2001-09-25
US202003 2002-07-25
US10/202,003 US6781856B2 (en) 2001-09-25 2002-07-25 Tertiary CAM cell
PCT/US2002/029749 WO2003028034A2 (en) 2001-09-25 2002-09-23 A tertiary cam cell

Publications (2)

Publication Number Publication Date
DE60217526D1 true DE60217526D1 (de) 2007-02-22
DE60217526T2 DE60217526T2 (de) 2007-11-08

Family

ID=26897277

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60217526T Expired - Lifetime DE60217526T2 (de) 2001-09-25 2002-09-23 Tertiäre cam-zelle

Country Status (8)

Country Link
US (2) US6781856B2 (de)
EP (1) EP1433180B1 (de)
JP (2) JP3981665B2 (de)
KR (1) KR100565456B1 (de)
CN (1) CN100440379C (de)
AU (1) AU2002335768A1 (de)
DE (1) DE60217526T2 (de)
WO (1) WO2003028034A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6751110B2 (en) * 2002-03-08 2004-06-15 Micron Technology, Inc. Static content addressable memory cell
US20060203529A1 (en) * 2003-09-05 2006-09-14 William Radke Cutting CAM peak power by clock regioning
US8169808B2 (en) 2008-01-25 2012-05-01 Micron Technology, Inc. NAND flash content addressable memory
US9076527B2 (en) 2009-07-16 2015-07-07 Mikamonu Group Ltd. Charge sharing in a TCAM array
US8238173B2 (en) 2009-07-16 2012-08-07 Zikbit Ltd Using storage cells to perform computation
US8732560B2 (en) * 2012-05-08 2014-05-20 Infineon Technologies Ag Method and device for correction of ternary stored binary data
US8935590B2 (en) * 2012-10-31 2015-01-13 Infineon Technologies Ag Circuitry and method for multi-bit correction
US9792988B2 (en) 2014-08-12 2017-10-17 Ciena Corporation Parallel turbine ternary content addressable memory for high-speed applications
DE102017110208B4 (de) * 2017-05-11 2019-03-07 Universität Rostock Signalverarbeitungsvorrichtung und Messvorrichtung zur hochpräzisen Laufzeitmessung von mindestens dreier Signale
CN110830169A (zh) * 2019-11-12 2020-02-21 深圳市本特利科技有限公司 一种电子雷管检测装置三进制编码方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045502B2 (ja) 1979-08-13 1985-10-09 日本電信電話株式会社 半導体連想メモリ回路
US4622653A (en) 1984-10-29 1986-11-11 Texas Instruments Incorporated Block associative memory
KR0135699B1 (ko) 1994-07-11 1998-04-24 김주용 셀프-리프레쉬 가능한 듀얼포트 동적 캠셀 및 리프레쉬장치
US5642322A (en) 1995-05-24 1997-06-24 Kawasaki Steel Corporation Layout of semiconductor memory and content-addressable memory
JP3190868B2 (ja) * 1997-11-21 2001-07-23 エヌイーシーマイクロシステム株式会社 連想メモリ装置
US6081440A (en) * 1998-11-05 2000-06-27 Lara Technology, Inc. Ternary content addressable memory (CAM) having fast insertion and deletion of data values
US6266262B1 (en) * 1998-11-05 2001-07-24 Lara Technology, Inc. Enhanced binary content addressable memory for longest prefix address matching
US5999435A (en) 1999-01-15 1999-12-07 Fast-Chip, Inc. Content addressable memory device
US6542391B2 (en) * 2000-06-08 2003-04-01 Netlogic Microsystems, Inc. Content addressable memory with configurable class-based storage partition
US6647457B1 (en) * 1999-11-16 2003-11-11 Cypress Semiconductor Corporation Content addressable memory having prioritization of unoccupied entries
US6331961B1 (en) 2000-06-09 2001-12-18 Silicon Access Networks, Inc. DRAM based refresh-free ternary CAM
EP1271548B1 (de) * 2001-06-22 2008-05-14 STMicroelectronics Limited Inhaltsadressierbarer Speicher mit AND Gatter Ubereinstimmungssignalkombinationsschaltung

Also Published As

Publication number Publication date
JP2005505089A (ja) 2005-02-17
KR100565456B1 (ko) 2006-03-30
US6781856B2 (en) 2004-08-24
WO2003028034A3 (en) 2003-10-30
US20040081000A1 (en) 2004-04-29
EP1433180B1 (de) 2007-01-10
US20030063485A1 (en) 2003-04-03
CN100440379C (zh) 2008-12-03
KR20040037108A (ko) 2004-05-04
EP1433180A2 (de) 2004-06-30
US6785153B2 (en) 2004-08-31
AU2002335768A1 (en) 2003-04-07
WO2003028034A2 (en) 2003-04-03
CN1592935A (zh) 2005-03-09
JP2007265604A (ja) 2007-10-11
DE60217526T2 (de) 2007-11-08
JP3981665B2 (ja) 2007-09-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition