DE60215642D1 - Membran für Mikroelektromekanischen Schalter und Verfahren zu dessen Herstellung und Verwendung - Google Patents

Membran für Mikroelektromekanischen Schalter und Verfahren zu dessen Herstellung und Verwendung

Info

Publication number
DE60215642D1
DE60215642D1 DE60215642T DE60215642T DE60215642D1 DE 60215642 D1 DE60215642 D1 DE 60215642D1 DE 60215642 T DE60215642 T DE 60215642T DE 60215642 T DE60215642 T DE 60215642T DE 60215642 D1 DE60215642 D1 DE 60215642D1
Authority
DE
Germany
Prior art keywords
membrane
making
posts
spaced
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60215642T
Other languages
English (en)
Other versions
DE60215642T2 (de
Inventor
Shea Chen
W Pillans
C Ehmke
Jamie Yao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Application granted granted Critical
Publication of DE60215642D1 publication Critical patent/DE60215642D1/de
Publication of DE60215642T2 publication Critical patent/DE60215642T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/0008—Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/016—Switches characterised by the shape having a bridge fixed on two ends and connected to one or more dimples
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Push-Button Switches (AREA)
  • Manufacture Of Switches (AREA)
  • Electronic Switches (AREA)
  • Switches Operated By Changes In Physical Conditions (AREA)
  • Electrophonic Musical Instruments (AREA)
  • Measuring Or Testing Involving Enzymes Or Micro-Organisms (AREA)
DE60215642T 2001-05-25 2002-05-14 Membran für einen elektromechanischen Mikroschalter und Verfahren zu deren Herstellung und Verwendung Expired - Lifetime DE60215642T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/866,205 US6803534B1 (en) 2001-05-25 2001-05-25 Membrane for micro-electro-mechanical switch, and methods of making and using it
US866205 2001-05-25
PCT/US2002/015346 WO2002096796A2 (en) 2001-05-25 2002-05-14 Membrane for micro-electro-mechanical switch, and methods of making and using it

Publications (2)

Publication Number Publication Date
DE60215642D1 true DE60215642D1 (de) 2006-12-07
DE60215642T2 DE60215642T2 (de) 2007-09-06

Family

ID=25347146

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60215642T Expired - Lifetime DE60215642T2 (de) 2001-05-25 2002-05-14 Membran für einen elektromechanischen Mikroschalter und Verfahren zu deren Herstellung und Verwendung

Country Status (8)

Country Link
US (1) US6803534B1 (de)
EP (1) EP1395516B1 (de)
AT (1) ATE343544T1 (de)
AU (1) AU2002305598A1 (de)
DE (1) DE60215642T2 (de)
MY (1) MY132648A (de)
TW (1) TW582043B (de)
WO (1) WO2002096796A2 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6791441B2 (en) * 2002-05-07 2004-09-14 Raytheon Company Micro-electro-mechanical switch, and methods of making and using it
US7781850B2 (en) 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
FR2868591B1 (fr) * 2004-04-06 2006-06-09 Commissariat Energie Atomique Microcommutateur a faible tension d'actionnement et faible consommation
US7327510B2 (en) 2004-09-27 2008-02-05 Idc, Llc Process for modifying offset voltage characteristics of an interferometric modulator
US7417783B2 (en) 2004-09-27 2008-08-26 Idc, Llc Mirror and mirror layer for optical modulator and method
US7369296B2 (en) 2004-09-27 2008-05-06 Idc, Llc Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US7373026B2 (en) 2004-09-27 2008-05-13 Idc, Llc MEMS device fabricated on a pre-patterned substrate
CN101213631B (zh) 2005-05-02 2012-03-28 爱普科斯公司 电容性射频微机电系统器件及其制造方法
US7474171B2 (en) 2005-06-01 2009-01-06 Raytheon Company Method and apparatus for reducing dielectric charging in MEMS structures
EP1733999A1 (de) * 2005-06-15 2006-12-20 Interuniversitair Microelektronica Centrum Vzw Mikroelektromechanisches Bauteil mit Spannungs- und Spannungsgradientenausgleich
EP2495212A3 (de) 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. MEMS-Vorrichtungen mit Stützstrukturen und Herstellungsverfahren dafür
JP4919146B2 (ja) * 2005-09-27 2012-04-18 独立行政法人産業技術総合研究所 スイッチング素子
DE102006001321B3 (de) * 2006-01-09 2007-07-26 Protron Mikrotechnik Gmbh Mikromechanischer Hochfrequenz-Schalter für koplanare Wellenleiter
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7652814B2 (en) 2006-01-27 2010-01-26 Qualcomm Mems Technologies, Inc. MEMS device with integrated optical element
US7547568B2 (en) * 2006-02-22 2009-06-16 Qualcomm Mems Technologies, Inc. Electrical conditioning of MEMS device and insulating layer thereof
US7643203B2 (en) * 2006-04-10 2010-01-05 Qualcomm Mems Technologies, Inc. Interferometric optical display system with broadband characteristics
US7711239B2 (en) * 2006-04-19 2010-05-04 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing nanoparticles
US7369292B2 (en) 2006-05-03 2008-05-06 Qualcomm Mems Technologies, Inc. Electrode and interconnect materials for MEMS devices
US7980671B2 (en) * 2006-06-06 2011-07-19 Xerox Corporation Electrostatic actuator and method of making the electrostatic actuator
WO2007145294A1 (ja) 2006-06-15 2007-12-21 Panasonic Corporation 電気機械素子およびそれを用いた電気機器
US8450902B2 (en) * 2006-08-28 2013-05-28 Xerox Corporation Electrostatic actuator device having multiple gap heights
US7706042B2 (en) 2006-12-20 2010-04-27 Qualcomm Mems Technologies, Inc. MEMS device and interconnects for same
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7625825B2 (en) 2007-06-14 2009-12-01 Qualcomm Mems Technologies, Inc. Method of patterning mechanical layer for MEMS structures
US8068268B2 (en) 2007-07-03 2011-11-29 Qualcomm Mems Technologies, Inc. MEMS devices having improved uniformity and methods for making them
DE102007035633B4 (de) 2007-07-28 2012-10-04 Protron Mikrotechnik Gmbh Verfahren zur Herstellung mikromechanischer Strukturen sowie mikromechanische Struktur
US7863079B2 (en) 2008-02-05 2011-01-04 Qualcomm Mems Technologies, Inc. Methods of reducing CD loss in a microelectromechanical device
EP2249365A1 (de) 2009-05-08 2010-11-10 Nxp B.V. RF-MEMS-Schalter mit einem Gitter als mittlere Elektrode
US8736404B2 (en) * 2009-10-01 2014-05-27 Cavendish Kinetics Inc. Micromechanical digital capacitor with improved RF hot switching performance and reliability
JP2013524287A (ja) * 2010-04-09 2013-06-17 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド 電気機械デバイスの機械層及びその形成方法
US8451070B2 (en) 2010-09-09 2013-05-28 Raytheon Company Self-powered microelectromechanical oscillator
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US8629360B2 (en) * 2012-04-30 2014-01-14 Raytheon Company RF micro-electro-mechanical system (MEMS) capacitive switch
CN103552978B (zh) * 2013-11-14 2015-12-30 东南大学 一种偏转式助回复型mems悬挂梁结构
CN103552973B (zh) * 2013-11-14 2015-12-30 东南大学 微机械系统中带有热驱动粘附消除机构的微悬臂梁结构
US9269497B2 (en) * 2014-05-30 2016-02-23 Raytheon Company Integrated capacitively-coupled bias circuit for RF MEMS switches
KR20160051280A (ko) * 2014-11-03 2016-05-11 삼성전기주식회사 Mems 스위치 및 이의 제조방법
FR3031096A1 (fr) * 2014-12-26 2016-07-01 Delfmems Dispositif microelectromecanique ou nanoelectromecanique comportant une membrane qui est mobile en translation et est profilee pour reduire les courts-circuits et la formation d'arcs electriques

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356730A (en) * 1981-01-08 1982-11-02 International Business Machines Corporation Electrostatically deformographic switches
US4423294A (en) * 1982-06-17 1983-12-27 The Hall Company Laminate switch assembly having improved durability
DE3320116A1 (de) * 1983-06-03 1984-12-06 Preh, Elektrofeinmechanische Werke Jakob Preh Nachf. Gmbh & Co, 8740 Bad Neustadt Tastschaltvorrichtung
US5619061A (en) 1993-07-27 1997-04-08 Texas Instruments Incorporated Micromechanical microwave switching
US5531018A (en) 1993-12-20 1996-07-02 General Electric Company Method of micromachining electromagnetically actuated current switches with polyimide reinforcement seals, and switches produced thereby
US5665997A (en) 1994-03-31 1997-09-09 Texas Instruments Incorporated Grated landing area to eliminate sticking of micro-mechanical devices
DE19730715C1 (de) 1996-11-12 1998-11-26 Fraunhofer Ges Forschung Verfahren zum Herstellen eines mikromechanischen Relais
US6100477A (en) * 1998-07-17 2000-08-08 Texas Instruments Incorporated Recessed etch RF micro-electro-mechanical switch
US6229683B1 (en) 1999-06-30 2001-05-08 Mcnc High voltage micromachined electrostatic switch
US6496351B2 (en) 1999-12-15 2002-12-17 Jds Uniphase Inc. MEMS device members having portions that contact a substrate and associated methods of operating
AU2001268742A1 (en) 2000-06-28 2002-01-08 The Regents Of The University Of California Capacitive microelectromechanical switches

Also Published As

Publication number Publication date
MY132648A (en) 2007-10-31
AU2002305598A1 (en) 2002-12-09
EP1395516A2 (de) 2004-03-10
DE60215642T2 (de) 2007-09-06
EP1395516B1 (de) 2006-10-25
US6803534B1 (en) 2004-10-12
ATE343544T1 (de) 2006-11-15
TW582043B (en) 2004-04-01
WO2002096796A2 (en) 2002-12-05
WO2002096796A3 (en) 2003-03-13

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