DE602008002851D1 - Nanokristall, Verfahren zu seiner Herstellung und elektronische Vorrichtung damit - Google Patents

Nanokristall, Verfahren zu seiner Herstellung und elektronische Vorrichtung damit

Info

Publication number
DE602008002851D1
DE602008002851D1 DE602008002851T DE602008002851T DE602008002851D1 DE 602008002851 D1 DE602008002851 D1 DE 602008002851D1 DE 602008002851 T DE602008002851 T DE 602008002851T DE 602008002851 T DE602008002851 T DE 602008002851T DE 602008002851 D1 DE602008002851 D1 DE 602008002851D1
Authority
DE
Germany
Prior art keywords
nanocrystal
manufacture
electronic device
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008002851T
Other languages
English (en)
Inventor
Eun Joo Jang
Shin Ae Jun
Jung Eun Lim
Young Nam Ham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602008002851D1 publication Critical patent/DE602008002851D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0632Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with gallium, indium or thallium
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/08Other phosphides
    • C01B25/082Other phosphides of boron, aluminium, gallium or indium
    • C01B25/087Other phosphides of boron, aluminium, gallium or indium of gallium or indium
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/56Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
    • C09K11/562Chalcogenides
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/62Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
    • C09K11/621Chalcogenides
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/70Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/80Particles consisting of a mixture of two or more inorganic phases
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/29Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991Coated
DE602008002851T 2007-04-26 2008-04-21 Nanokristall, Verfahren zu seiner Herstellung und elektronische Vorrichtung damit Active DE602008002851D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070040803A KR100853087B1 (ko) 2007-04-26 2007-04-26 나노결정, 그의 제조방법 및 그를 포함하는 전자소자

Publications (1)

Publication Number Publication Date
DE602008002851D1 true DE602008002851D1 (de) 2010-11-18

Family

ID=39639065

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008002851T Active DE602008002851D1 (de) 2007-04-26 2008-04-21 Nanokristall, Verfahren zu seiner Herstellung und elektronische Vorrichtung damit

Country Status (5)

Country Link
US (1) US8247073B2 (de)
EP (1) EP1988142B1 (de)
JP (1) JP5416359B2 (de)
KR (1) KR100853087B1 (de)
DE (1) DE602008002851D1 (de)

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US7850943B2 (en) * 2004-05-28 2010-12-14 Samsung Electronics Co., Ltd. Method of preparing cadmium sulfide nanocrystals emitting light at multiple wavelengths, and cadmium sulfide nanocrystals prepared by the method
KR100621308B1 (ko) * 2004-05-28 2006-09-14 삼성전자주식회사 다중 파장에서 발광하는 황화 카드뮴 나노 결정의 제조방법 및 그에 의해 수득된 황화 카드뮴 나노 결정
GB0714865D0 (en) * 2007-07-31 2007-09-12 Nanoco Technologies Ltd Nanoparticles
JP5682902B2 (ja) * 2008-04-23 2015-03-11 独立行政法人産業技術総合研究所 水分散性を有する高発光効率ナノ粒子
FR2930786B1 (fr) * 2008-05-05 2010-12-31 Commissariat Energie Atomique Procede de preparation de nanocristaux luminescents, nanocristaux ainsi obtenus et leurs utilisations
TWI378575B (en) * 2008-10-01 2012-12-01 Silitek Electronic Guangzhou Light emitting diode device and manufacturing method thereof
CN102782853A (zh) * 2010-03-05 2012-11-14 第一太阳能有限公司 具有分级缓冲层的光伏器件
WO2012158832A2 (en) 2011-05-16 2012-11-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
JP5705160B2 (ja) 2011-05-30 2015-04-22 富士フイルム株式会社 InPナノ粒子の合成方法およびナノ粒子
GB2496200A (en) * 2011-11-07 2013-05-08 Sharp Kk Nitride Photovoltaic or Photoconductive Devices
US10008631B2 (en) 2011-11-22 2018-06-26 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
WO2013078249A1 (en) 2011-11-22 2013-05-30 Qd Vision Inc. Method of making quantum dots
WO2013078245A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Method of making quantum dots
WO2013078247A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same
WO2013078242A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Methods for coating semiconductor nanocrystals
KR101960469B1 (ko) 2012-02-05 2019-03-20 삼성전자주식회사 반도체 나노결정, 그의 제조 방법, 조성물 및 제품
KR101537296B1 (ko) 2012-10-26 2015-07-17 삼성전자 주식회사 반도체 나노결정 및 그 제조방법
US9617472B2 (en) 2013-03-15 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same
KR101517094B1 (ko) 2013-06-07 2015-06-05 삼성전자 주식회사 나노 결정 합성 방법
US20160085001A1 (en) * 2013-08-28 2016-03-24 Jiuxia YANG Touch panel, liquid crystal display device and surface modification method for infrared material
US10340427B2 (en) * 2014-02-04 2019-07-02 Lumileds Llc Quantum dots with inorganic ligands in an inorganic matrix
KR101525525B1 (ko) 2014-02-05 2015-06-03 삼성전자주식회사 나노 결정 입자 및 그의 제조 방법
KR101912106B1 (ko) * 2015-03-09 2018-12-28 삼성에스디아이 주식회사 코어/쉘 구조를 가지는 나노결정, 이의 제조방법 및 이를 포함하는 전자소자
WO2017044805A1 (en) * 2015-09-11 2017-03-16 University Of Florida Research Foundation, Incorporated Light emitting phototransistor
CN108496240A (zh) 2015-09-11 2018-09-04 佛罗里达大学研究基金会有限公司 垂直场效应晶体管
JP6473272B2 (ja) * 2016-05-27 2019-02-20 富士フイルム株式会社 コアシェル粒子、コアシェル粒子の製造方法およびフィルム
KR102254581B1 (ko) 2017-09-12 2021-05-21 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
JP2022138051A (ja) * 2021-03-09 2022-09-22 三菱マテリアル株式会社 コロイド粒子の製造方法及びコロイド粒子

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US5474591A (en) * 1994-01-31 1995-12-12 Duke University Method of synthesizing III-V semiconductor nanocrystals
US5990479A (en) * 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
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WO2003050329A2 (en) * 2001-07-30 2003-06-19 The Board Of Trustees Of The University Of Arkansas High quality colloidal nanocrystals and methods of preparation of the same in non-coordinating solvents
WO2003021635A2 (en) * 2001-09-05 2003-03-13 Rensselaer Polytechnic Institute Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles
FR2838241B1 (fr) 2002-04-09 2004-06-25 Commissariat Energie Atomique Materiaux luminescents constitues de nanocristaux a structure coeur/coquille et leur procede de preparation
AU2003304433A1 (en) * 2002-08-02 2005-03-07 Ultradots, Inc. Quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods
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Also Published As

Publication number Publication date
JP2008279591A (ja) 2008-11-20
JP5416359B2 (ja) 2014-02-12
US8247073B2 (en) 2012-08-21
US20080268248A1 (en) 2008-10-30
KR100853087B1 (ko) 2008-08-19
EP1988142A1 (de) 2008-11-05
EP1988142B1 (de) 2010-10-06

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