DE602007012501D1 - Vorrichtung zur Bereitstellung einer Schutzschicht zur Bearbeitung eines geladenen Teilchenstrahls - Google Patents

Vorrichtung zur Bereitstellung einer Schutzschicht zur Bearbeitung eines geladenen Teilchenstrahls

Info

Publication number
DE602007012501D1
DE602007012501D1 DE602007012501T DE602007012501T DE602007012501D1 DE 602007012501 D1 DE602007012501 D1 DE 602007012501D1 DE 602007012501 T DE602007012501 T DE 602007012501T DE 602007012501 T DE602007012501 T DE 602007012501T DE 602007012501 D1 DE602007012501 D1 DE 602007012501D1
Authority
DE
Germany
Prior art keywords
protective layer
charged particle
particle beam
providing
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007012501T
Other languages
English (en)
Inventor
Jeff Blackwood
Stacey Stone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Publication of DE602007012501D1 publication Critical patent/DE602007012501D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Ink Jet Recording Methods And Recording Media Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Electron Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
DE602007012501T 2006-10-31 2007-10-31 Vorrichtung zur Bereitstellung einer Schutzschicht zur Bearbeitung eines geladenen Teilchenstrahls Active DE602007012501D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85553606P 2006-10-31 2006-10-31

Publications (1)

Publication Number Publication Date
DE602007012501D1 true DE602007012501D1 (de) 2011-03-31

Family

ID=38927575

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007012501T Active DE602007012501D1 (de) 2006-10-31 2007-10-31 Vorrichtung zur Bereitstellung einer Schutzschicht zur Bearbeitung eines geladenen Teilchenstrahls

Country Status (5)

Country Link
US (2) US8097308B2 (de)
EP (1) EP1918981B1 (de)
JP (1) JP2008171800A (de)
AT (1) ATE498900T1 (de)
DE (1) DE602007012501D1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008171800A (ja) 2006-10-31 2008-07-24 Fei Co 荷電粒子ビーム処理用保護層
KR20150038544A (ko) * 2008-05-07 2015-04-08 더 트러스티즈 오브 프린스턴 유니버시티 전자 장치들 또는 다른 물품들 위의 코팅들에 사용하기 위한 혼성 층들
EP2151848A1 (de) * 2008-08-07 2010-02-10 FEI Company Verfahren zur Fertigung eines Werkstücks mit einem fokussierten Teilchenstrahl
EP2278306A1 (de) * 2009-07-13 2011-01-26 Fei Company Verfahren zur Untersuchung einer Probe
US20110048931A1 (en) * 2009-08-25 2011-03-03 Makarov Vladimir V FIB Process for Selective and Clean Etching of Copper
DE102013012225A1 (de) 2013-07-23 2015-01-29 Carl Zeiss Microscopy Gmbh Verfahren zur TEM-Lamellen-Herstellung und Anordnung für TEM-Lamellen-Schutzvorrichtung

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US4981625A (en) * 1988-03-14 1991-01-01 California Institute Of Technology Monodisperse, polymeric microspheres produced by irradiation of slowly thawing frozen drops
JP2774884B2 (ja) 1991-08-22 1998-07-09 株式会社日立製作所 試料の分離方法及びこの分離方法で得た分離試料の分析方法
JP3117836B2 (ja) * 1993-03-02 2000-12-18 セイコーインスツルメンツ株式会社 集束イオンビーム装置
DE4343212A1 (de) * 1993-12-17 1995-06-22 Walter Schindlegger Trinkgefäß
JPH08142330A (ja) * 1994-11-14 1996-06-04 Fujitsu Ltd インクジェットヘッド
JPH11154479A (ja) * 1997-11-20 1999-06-08 Hitachi Ltd ２次電子画像検出方法及びその装置並びに集束荷電粒子ビームによる処理方法及びその装置
US6406921B1 (en) * 1998-07-14 2002-06-18 Zyomyx, Incorporated Protein arrays for high-throughput screening
US6066357A (en) * 1998-12-21 2000-05-23 Eastman Kodak Company Methods of making a full-color organic light-emitting display
JP2001264225A (ja) * 2000-03-15 2001-09-26 Hitachi Ltd 試料作製方法
EP1209737B2 (de) * 2000-11-06 2014-04-30 Hitachi, Ltd. Verfahren zur Herstellung von Proben
WO2002042087A2 (en) * 2000-11-13 2002-05-30 Imaging Alternatives, Inc. Wood surface inkjet receptor medium and method of making and using same
JP2004537758A (ja) * 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
US6555284B1 (en) * 2001-12-27 2003-04-29 Eastman Kodak Company In situ vacuum method for making OLED devices
US20030185889A1 (en) * 2002-03-27 2003-10-02 Jixiong Yan Colloidal nanosilver solution and method for making the same
JP2003288839A (ja) * 2002-03-28 2003-10-10 Canon Inc 液体塗布装置及び液体塗布方法、描画装置及び描画方法
US6922118B2 (en) * 2002-11-01 2005-07-26 Hrl Laboratories, Llc Micro electrical mechanical system (MEMS) tuning using focused ion beams
FI116318B (fi) * 2003-02-27 2005-10-31 Avantone Oy Painetut TTI-indikaattorit
US6926935B2 (en) * 2003-06-27 2005-08-09 Fei Company Proximity deposition
WO2005005643A2 (en) 2003-07-01 2005-01-20 Biolex, Inc. Chloroplast transformation of duckweed
US7701138B2 (en) * 2003-07-02 2010-04-20 Canon Kabushiki Kaisha Information acquisition method, information acquisition apparatus and disease diagnosis method
DE10362116B4 (de) * 2003-09-17 2008-08-28 Carl Zeiss Nts Gmbh Verfahren zur Präparation einer Probe für elektronenmikroskopische Untersuchungen, sowie dabei verwendeter Greifer
US7241361B2 (en) 2004-02-20 2007-07-10 Fei Company Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
JP4051631B2 (ja) * 2004-08-20 2008-02-27 セイコーエプソン株式会社 エッチング方法、微細構造体の製造方法、導電線の形成方法、薄膜トランジスタの製造方法及び電子機器の製造方法
US7601246B2 (en) * 2004-09-29 2009-10-13 Lam Research Corporation Methods of sputtering a protective coating on a semiconductor substrate
JP4888991B2 (ja) * 2005-01-18 2012-02-29 新科實業有限公司 面形状形成方法及び装置、磁気ヘッドの浮上面形成方法及び装置
US7202006B2 (en) * 2005-06-20 2007-04-10 Xerox Corporation Protective layer for reimageable medium
JP5600371B2 (ja) 2006-02-15 2014-10-01 エフ・イ−・アイ・カンパニー 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング
US20070278180A1 (en) * 2006-06-01 2007-12-06 Williamson Mark J Electron induced chemical etching for materials characterization
JP2008171800A (ja) 2006-10-31 2008-07-24 Fei Co 荷電粒子ビーム処理用保護層

Also Published As

Publication number Publication date
US8097308B2 (en) 2012-01-17
US20120107521A1 (en) 2012-05-03
EP1918981A3 (de) 2009-07-22
US20080102224A1 (en) 2008-05-01
ATE498900T1 (de) 2011-03-15
EP1918981A2 (de) 2008-05-07
EP1918981B1 (de) 2011-02-16
JP2008171800A (ja) 2008-07-24
US9263306B2 (en) 2016-02-16

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