DE602007000624D1 - Verfahren und Vorrichtung zur Charakterisierung von winkelaufgelöster spektroskopischer Lithografie - Google Patents
Verfahren und Vorrichtung zur Charakterisierung von winkelaufgelöster spektroskopischer LithografieInfo
- Publication number
- DE602007000624D1 DE602007000624D1 DE602007000624T DE602007000624T DE602007000624D1 DE 602007000624 D1 DE602007000624 D1 DE 602007000624D1 DE 602007000624 T DE602007000624 T DE 602007000624T DE 602007000624 T DE602007000624 T DE 602007000624T DE 602007000624 D1 DE602007000624 D1 DE 602007000624D1
- Authority
- DE
- Germany
- Prior art keywords
- characterization
- angle
- resolved spectroscopic
- lithography
- spectroscopic lithography
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
- G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/472,565 US7692792B2 (en) | 2006-06-22 | 2006-06-22 | Method and apparatus for angular-resolved spectroscopic lithography characterization |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602007000624D1 true DE602007000624D1 (de) | 2009-04-16 |
Family
ID=38325494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602007000624T Active DE602007000624D1 (de) | 2006-06-22 | 2007-06-11 | Verfahren und Vorrichtung zur Charakterisierung von winkelaufgelöster spektroskopischer Lithografie |
Country Status (8)
Country | Link |
---|---|
US (1) | US7692792B2 (de) |
EP (1) | EP1870696B1 (de) |
JP (1) | JP4953932B2 (de) |
KR (1) | KR100903831B1 (de) |
CN (1) | CN101093362B (de) |
DE (1) | DE602007000624D1 (de) |
SG (1) | SG138566A1 (de) |
TW (1) | TWI362570B (de) |
Families Citing this family (30)
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US7973927B2 (en) * | 2006-09-29 | 2011-07-05 | Uwm Research Foundation, Inc. | Two-photon microscope with spectral resolution |
US7701577B2 (en) * | 2007-02-21 | 2010-04-20 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
TWI370894B (en) * | 2007-02-26 | 2012-08-21 | Corning Inc | Method for measuring distortion |
IL194839A0 (en) * | 2007-10-25 | 2009-08-03 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
DE102007055062A1 (de) * | 2007-11-16 | 2009-05-28 | Carl Zeiss Smt Ag | Optisches System, sowie Verfahren zur Charakterisierung eines optischen Systems |
NL1036632A1 (nl) * | 2008-03-26 | 2009-09-29 | Asml Netherlands Bv | Inspection Apparatus, Lithographic Apparatus and Method of Measuring a Property of a Substrate. |
JP2011525713A (ja) * | 2008-06-26 | 2011-09-22 | エーエスエムエル ネザーランズ ビー.ブイ. | オーバレイ測定装置、リソグラフィ装置、及びそのようなオーバレイ測定装置を用いたデバイス製造方法 |
KR101257453B1 (ko) * | 2009-05-12 | 2013-04-23 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피에 사용하는 검사 방법 |
US9223227B2 (en) * | 2011-02-11 | 2015-12-29 | Asml Netherlands B.V. | Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method |
US9361044B2 (en) | 2011-03-28 | 2016-06-07 | Western Digital Technologies, Inc. | Power-safe data management system |
US8982206B2 (en) | 2011-04-07 | 2015-03-17 | Uwm Research Foundation, Inc. | High speed microscope with narrow detector and pixel binning |
JP2013036792A (ja) * | 2011-08-05 | 2013-02-21 | Seiko Epson Corp | 偏光状態測定装置及び偏光状態測定方法 |
CN103307997B (zh) * | 2012-03-09 | 2016-12-14 | 上海微电子装备有限公司 | 一种角分辨散射测量装置及其测量方法 |
CN103453845B (zh) * | 2012-06-05 | 2016-07-06 | 上海微电子装备有限公司 | 一种散射计量的装置和测量方法 |
AU2014257297B2 (en) * | 2013-04-21 | 2018-04-05 | Mobileodt Ltd | A polarized light imaging apparatus and methods thereof for separating light from a surface of a sample its deeper diffuse layers |
DE102013224435A1 (de) * | 2013-11-28 | 2015-05-28 | Carl Zeiss Smt Gmbh | Messanordnung zur Messung optischer Eigenschaften eines reflektiven optischen Elements, insbesondere für die Mikrolithographie |
KR20160017718A (ko) * | 2014-08-01 | 2016-02-17 | 서강대학교산학협력단 | 평행한 출사빔 제공이 가능한 광학적 소자 |
CN105807580B (zh) * | 2014-12-31 | 2019-12-24 | 上海微电子装备(集团)股份有限公司 | 一种工件六自由度位置和姿态测量传感器装置 |
EP3264030B1 (de) * | 2015-02-23 | 2020-07-22 | Nikon Corporation | Messvorrichtung, lithografiesystem und belichtungsvorrichtung und vorrichtungsherstellungsverfahren |
CN104748684B (zh) * | 2015-04-13 | 2017-04-05 | 北方工业大学 | 一种曲轴轴肩清根的视觉检测方法及装置 |
CN106483777B (zh) * | 2015-08-31 | 2018-06-26 | 上海微电子装备(集团)股份有限公司 | 一种具有调焦功能的对准系统及对准方法 |
US10078269B2 (en) * | 2015-10-02 | 2018-09-18 | Nikon Corporation | Array of encoders for alignment measurement |
US10048132B2 (en) * | 2016-07-28 | 2018-08-14 | Kla-Tencor Corporation | Simultaneous capturing of overlay signals from multiple targets |
KR101898217B1 (ko) * | 2016-12-29 | 2018-09-12 | 엘지디스플레이 주식회사 | 검사장비 및 이를 이용한 검사방법 |
EP3454124A1 (de) | 2017-09-07 | 2019-03-13 | ASML Netherlands B.V. | Verfahren zur bestimmung eines strukturierungsverfahrensparameters |
CN109840984B (zh) * | 2017-11-28 | 2020-12-25 | 南京造币有限公司 | 一种硬币表面质量检查系统、方法和装置 |
KR102436448B1 (ko) | 2017-12-13 | 2022-08-24 | 에이에스엠엘 홀딩 엔.브이. | 빔 분할 프리즘 시스템 |
KR102527672B1 (ko) * | 2018-04-06 | 2023-04-28 | 에이에스엠엘 네델란즈 비.브이. | 비선형 광학계를 갖는 검사 장치 |
KR20220031834A (ko) | 2020-09-04 | 2022-03-14 | 삼성전자주식회사 | 멀티 스케일의 스펙트럼 이미징 장치 및 방법, 및 그 방법을 이용한 반도체 소자 제조방법 |
CN114459619B (zh) * | 2022-01-27 | 2023-08-08 | 华南师范大学 | 一种相移量实时在线测量装置及方法 |
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US4723315A (en) * | 1986-06-24 | 1988-02-02 | Itek Corporation | Polarization matching mixer |
US4931132A (en) * | 1988-10-07 | 1990-06-05 | Bell Communications Research, Inc. | Optical control of deposition of crystal monolayers |
US5412473A (en) * | 1993-07-16 | 1995-05-02 | Therma-Wave, Inc. | Multiple angle spectroscopic analyzer utilizing interferometric and ellipsometric devices |
US5703692A (en) * | 1995-08-03 | 1997-12-30 | Bio-Rad Laboratories, Inc. | Lens scatterometer system employing source light beam scanning means |
US5880838A (en) * | 1996-06-05 | 1999-03-09 | California Institute Of California | System and method for optically measuring a structure |
DE19745607B4 (de) | 1997-10-06 | 2004-08-12 | Forschungsverbund Berlin E.V. | Anordnung zur Messung von optischen Parametern kristalliner Proben mittels optischer Reflexion |
US5963329A (en) * | 1997-10-31 | 1999-10-05 | International Business Machines Corporation | Method and apparatus for measuring the profile of small repeating lines |
WO2001013079A1 (en) | 1999-08-18 | 2001-02-22 | Swinburne University | Method and apparatus for the resolution of beams of electromagnetic radiation |
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US6689519B2 (en) * | 2000-05-04 | 2004-02-10 | Kla-Tencor Technologies Corp. | Methods and systems for lithography process control |
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IL138552A (en) * | 2000-09-19 | 2006-08-01 | Nova Measuring Instr Ltd | Measurement of transverse displacement by optical method |
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EP1608934A4 (de) * | 2003-04-01 | 2007-03-21 | Zetetic Inst | Vorrichtung und verfahren zur verbundmessung von feldern gestreuter bzw. reflektierter oder durchgelassener orthogonal polarisierter strahlen durch ein objekt bei der interferometrie |
US7068363B2 (en) * | 2003-06-06 | 2006-06-27 | Kla-Tencor Technologies Corp. | Systems for inspection of patterned or unpatterned wafers and other specimen |
US7061623B2 (en) * | 2003-08-25 | 2006-06-13 | Spectel Research Corporation | Interferometric back focal plane scatterometry with Koehler illumination |
US7388668B2 (en) * | 2004-06-09 | 2008-06-17 | President & Fellows Of Harvard College | Phase sensitive heterodyne coherent anti-Stokes Raman scattering micro-spectroscopy and microscopy |
US7791727B2 (en) * | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
US20060109463A1 (en) * | 2004-11-22 | 2006-05-25 | Asml Netherlands B.V. | Latent overlay metrology |
US7453577B2 (en) * | 2004-12-14 | 2008-11-18 | Asml Netherlands B.V. | Apparatus and method for inspecting a patterned part of a sample |
US7701577B2 (en) * | 2007-02-21 | 2010-04-20 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
-
2006
- 2006-06-22 US US11/472,565 patent/US7692792B2/en active Active
-
2007
- 2007-06-11 DE DE602007000624T patent/DE602007000624D1/de active Active
- 2007-06-11 EP EP07252355A patent/EP1870696B1/de active Active
- 2007-06-15 TW TW096121660A patent/TWI362570B/zh active
- 2007-06-15 JP JP2007158121A patent/JP4953932B2/ja active Active
- 2007-06-19 CN CN2007101264863A patent/CN101093362B/zh active Active
- 2007-06-19 SG SG200704535-4A patent/SG138566A1/en unknown
- 2007-06-21 KR KR1020070060983A patent/KR100903831B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100903831B1 (ko) | 2009-06-25 |
TW200807180A (en) | 2008-02-01 |
JP4953932B2 (ja) | 2012-06-13 |
US20070296973A1 (en) | 2007-12-27 |
CN101093362A (zh) | 2007-12-26 |
CN101093362B (zh) | 2012-02-15 |
SG138566A1 (en) | 2008-01-28 |
EP1870696A1 (de) | 2007-12-26 |
KR20070121565A (ko) | 2007-12-27 |
JP2008042177A (ja) | 2008-02-21 |
TWI362570B (en) | 2012-04-21 |
US7692792B2 (en) | 2010-04-06 |
EP1870696B1 (de) | 2009-03-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |