DE602006021271D1 - Integrierte Schaltung mit mindestens einer Photozelle und mit einem Vielschicht-Lichtleiter sowie entsprechendes Herstellungsverfahren - Google Patents

Integrierte Schaltung mit mindestens einer Photozelle und mit einem Vielschicht-Lichtleiter sowie entsprechendes Herstellungsverfahren

Info

Publication number
DE602006021271D1
DE602006021271D1 DE602006021271T DE602006021271T DE602006021271D1 DE 602006021271 D1 DE602006021271 D1 DE 602006021271D1 DE 602006021271 T DE602006021271 T DE 602006021271T DE 602006021271 T DE602006021271 T DE 602006021271T DE 602006021271 D1 DE602006021271 D1 DE 602006021271D1
Authority
DE
Germany
Prior art keywords
photocell
integrated circuit
light guide
corresponding manufacturing
multilayer light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006021271T
Other languages
English (en)
Inventor
Francois Roy
Thomas Girault
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Publication of DE602006021271D1 publication Critical patent/DE602006021271D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4298—Coupling light guides with opto-electronic elements coupling with non-coherent light sources and/or radiation detectors, e.g. lamps, incandescent bulbs, scintillation chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE602006021271T 2005-11-30 2006-11-08 Integrierte Schaltung mit mindestens einer Photozelle und mit einem Vielschicht-Lichtleiter sowie entsprechendes Herstellungsverfahren Active DE602006021271D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0512155A FR2894072A1 (fr) 2005-11-30 2005-11-30 Circuit integre muni d'au moins une cellule photosensible comprenant un guide de lumiere a plusieurs niveaux et procede de fabrication correspondant

Publications (1)

Publication Number Publication Date
DE602006021271D1 true DE602006021271D1 (de) 2011-05-26

Family

ID=36754360

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006021271T Active DE602006021271D1 (de) 2005-11-30 2006-11-08 Integrierte Schaltung mit mindestens einer Photozelle und mit einem Vielschicht-Lichtleiter sowie entsprechendes Herstellungsverfahren

Country Status (4)

Country Link
US (2) US7728278B2 (de)
EP (1) EP1793247B1 (de)
DE (1) DE602006021271D1 (de)
FR (1) FR2894072A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100653848B1 (ko) * 2005-09-13 2006-12-05 (주)한비젼 3차원 적층형 이미지 센서 및 그의 제조방법
US7816641B2 (en) * 2007-12-28 2010-10-19 Candela Microsystems (S) Pte. Ltd. Light guide array for an image sensor
CN102938407B (zh) * 2008-03-14 2015-06-17 郑苍隆 用于图像传感器的光导阵列
JP4697258B2 (ja) * 2008-05-09 2011-06-08 ソニー株式会社 固体撮像装置と電子機器
JP5446484B2 (ja) * 2008-07-10 2014-03-19 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
JP5235565B2 (ja) * 2008-08-27 2013-07-10 キヤノン株式会社 撮像センサ及び撮像装置
JP5539014B2 (ja) 2009-05-21 2014-07-02 キヤノン株式会社 固体撮像素子
US8330840B2 (en) * 2009-08-06 2012-12-11 Aptina Imaging Corporation Image sensor with multilayer interference filters
FI20096192A (fi) * 2009-11-17 2011-05-18 Optomed Oy Kohteen valaiseminen
JP5506517B2 (ja) * 2010-04-12 2014-05-28 キヤノン株式会社 固体撮像素子
US8993953B2 (en) * 2013-01-09 2015-03-31 Shenzhen China Star Optoelectronics Technology Co., Ltd Apparatus and system for measuring flicker of display panel
JP2017050298A (ja) * 2014-01-21 2017-03-09 パナソニックＩｐマネジメント株式会社 固体撮像装置及びその製造方法
US20170162621A1 (en) * 2015-12-02 2017-06-08 Omnivision Technologies, Inc. Light channels with multi-step etch
JP6465839B2 (ja) * 2016-07-06 2019-02-06 キヤノン株式会社 光電変換装置、撮像システム、移動体、および、光電変換装置の製造方法
CN114400235A (zh) * 2022-01-16 2022-04-26 Nano科技(北京)有限公司 一种背照射光探测阵列结构及其制备方法
WO2024038856A1 (ja) * 2022-08-19 2024-02-22 株式会社ニコン 検出装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999046618A1 (en) * 1998-03-09 1999-09-16 Corning Incorporated Optical waveguide structure including cascaded arrays of tapered waveguides
US6366365B1 (en) * 1998-08-26 2002-04-02 Agilent Technologies, Inc. Waveguide array-based image sensor for document scanner scan head
FR2829876B1 (fr) * 2001-09-18 2004-07-02 St Microelectronics Sa Cellule photosensible incorporant un guide de lumiere et matrice composee de telles cellules
EP1367650A1 (de) * 2002-05-27 2003-12-03 STMicroelectronics S.A. Elektronische Vorrichtung mit elektronischen Schaltungen und einer photosensitiven Zone und deren Verfahren zur Herstellung
GB2403847B (en) * 2003-07-01 2005-11-16 Micron Technology Inc Optical channels for multi-level metal optical imagers and method for manufacturing same
US6969899B2 (en) * 2003-12-08 2005-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with light guides
US7492027B2 (en) * 2004-02-20 2009-02-17 Micron Technology, Inc. Reduced crosstalk sensor and method of formation

Also Published As

Publication number Publication date
FR2894072A1 (fr) 2007-06-01
US20070145246A1 (en) 2007-06-28
US8183517B2 (en) 2012-05-22
EP1793247A1 (de) 2007-06-06
US20100200943A1 (en) 2010-08-12
EP1793247B1 (de) 2011-04-13
US7728278B2 (en) 2010-06-01

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