DE602006019217D1 - Verfahren zum messen eines strahlwinkels - Google Patents

Verfahren zum messen eines strahlwinkels

Info

Publication number
DE602006019217D1
DE602006019217D1 DE602006019217T DE602006019217T DE602006019217D1 DE 602006019217 D1 DE602006019217 D1 DE 602006019217D1 DE 602006019217 T DE602006019217 T DE 602006019217T DE 602006019217 T DE602006019217 T DE 602006019217T DE 602006019217 D1 DE602006019217 D1 DE 602006019217D1
Authority
DE
Germany
Prior art keywords
measuring
beam angle
angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006019217T
Other languages
English (en)
Inventor
Andrew Ray
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of DE602006019217D1 publication Critical patent/DE602006019217D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24405—Faraday cages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30405—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30405—Details
    • H01J2237/30411—Details using digital signal processors [DSP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Measurement Of Radiation (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
DE602006019217T 2005-04-01 2006-03-31 Verfahren zum messen eines strahlwinkels Active DE602006019217D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66745505P 2005-04-01 2005-04-01
PCT/US2006/011788 WO2006107726A1 (en) 2005-04-01 2006-03-31 Method of measuring beam angle

Publications (1)

Publication Number Publication Date
DE602006019217D1 true DE602006019217D1 (de) 2011-02-10

Family

ID=36649134

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006019217T Active DE602006019217D1 (de) 2005-04-01 2006-03-31 Verfahren zum messen eines strahlwinkels

Country Status (8)

Country Link
US (1) US7417242B2 (de)
EP (1) EP1864312B1 (de)
JP (1) JP5181249B2 (de)
KR (1) KR101250189B1 (de)
CN (1) CN101151700B (de)
DE (1) DE602006019217D1 (de)
TW (1) TWI415159B (de)
WO (1) WO2006107726A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2409926B (en) * 2004-01-06 2006-11-29 Applied Materials Inc Ion beam monitoring arrangement
US7394073B2 (en) * 2005-04-05 2008-07-01 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam angle measurement in two dimensions
US7253423B2 (en) * 2005-05-24 2007-08-07 Varian Semiconductor Equipment Associates, Inc. Technique for uniformity tuning in an ion implanter system
US7435977B2 (en) * 2005-12-12 2008-10-14 Axcelis Technologies, Inc. Ion beam angle measurement systems and methods for ion implantation systems
US7453070B2 (en) * 2006-06-29 2008-11-18 Varian Semiconductor Associates, Inc. Methods and apparatus for beam density measurement in two dimensions
US7227160B1 (en) * 2006-09-13 2007-06-05 Axcelis Technologies, Inc. Systems and methods for beam angle adjustment in ion implanters
US7683348B2 (en) * 2006-10-11 2010-03-23 Axcelis Technologies, Inc. Sensor for ion implanter
US7994488B2 (en) * 2008-04-24 2011-08-09 Axcelis Technologies, Inc. Low contamination, low energy beamline architecture for high current ion implantation
TW201133536A (en) * 2010-03-16 2011-10-01 Kingstone Semiconductor Co Ltd Ions injection system and method
US9329213B2 (en) * 2011-02-01 2016-05-03 Sirc Co., Ltd. Power measuring apparatus
JP5808706B2 (ja) * 2012-03-29 2015-11-10 住友重機械イオンテクノロジー株式会社 イオン注入装置及びその制御方法
TWI686838B (zh) 2014-12-26 2020-03-01 美商艾克塞利斯科技公司 改善混合式掃描離子束植入機之生產力的系統及方法
JP6579985B2 (ja) * 2016-03-18 2019-09-25 住友重機械イオンテクノロジー株式会社 イオン注入装置および測定装置
JP6982531B2 (ja) 2018-03-26 2021-12-17 住友重機械イオンテクノロジー株式会社 イオン注入装置および測定装置
US11476084B2 (en) * 2019-09-10 2022-10-18 Applied Materials, Inc. Apparatus and techniques for ion energy measurement in pulsed ion beams
US11810754B2 (en) 2021-12-09 2023-11-07 Applied Materials, Inc. System using pixelated faraday sensor

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584314B2 (ja) * 1977-12-21 1983-01-25 株式会社東芝 電子線測定装置
JPS59112232A (ja) * 1982-12-20 1984-06-28 Toshiba Corp ビ−ム検出器
JP2000082432A (ja) * 1998-09-08 2000-03-21 Nissin High Voltage Co Ltd ビームプロファイルモニタ
US6137112A (en) * 1998-09-10 2000-10-24 Eaton Corporation Time of flight energy measurement apparatus for an ion beam implanter
AU2773001A (en) * 2000-01-07 2001-07-24 Proteros, Llc Enhanced faraday cup for diagnostic measurements in an ion implanter
KR20030001555A (ko) * 2000-05-25 2003-01-06 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 가동부를 갖는 센서 구조물을 사용하여 입자를 검출하는방법 및 장치
US6690022B2 (en) * 2001-01-17 2004-02-10 Varian Semiconductor Equipment Associates, Inc. Ion beam incidence angle and beam divergence monitor
JP2002267759A (ja) * 2001-03-07 2002-09-18 Mitsubishi Electric Corp ビームモニタシステム及びビーム照射システム
US6763316B2 (en) 2002-03-21 2004-07-13 Varian Semiconductor Equipment Associates, Inc. Method for measurement of beam emittance in a charged particle transport system
US20040031934A1 (en) * 2002-08-15 2004-02-19 Hiatt William Mark System and method for monitoring ion implantation processing
US6911660B2 (en) * 2002-10-02 2005-06-28 Varian Semiconductor Equipment Associates, Inc. Method of measuring ion beam angles
DE10329388B4 (de) * 2003-06-30 2006-12-28 Advanced Micro Devices, Inc., Sunnyvale Faraday-Anordnung als Ionenstrahlmessvorrichtung für eine Ionenimplantationsanlage und Verfahren zu deren Betrieb
DE10329383B4 (de) * 2003-06-30 2006-07-27 Advanced Micro Devices, Inc., Sunnyvale Ionenstrahldetektor für Ionenimplantationsanlagen, Faraday-Behälter dafür und Verfahren zur Steuerung der Eigenschaften eines Ionenstrahls mittels des Ionenstrahldetektors
TWI220154B (en) * 2003-08-12 2004-08-11 Promos Technologies Inc Apparatus and method for detecting deviations of incident angles of ion beam
JP2005063874A (ja) * 2003-08-19 2005-03-10 Nissin Electric Co Ltd イオン注入装置
US7109499B2 (en) * 2004-11-05 2006-09-19 Varian Semiconductor Equipment Associates, Inc. Apparatus and methods for two-dimensional ion beam profiling

Also Published As

Publication number Publication date
TWI415159B (zh) 2013-11-11
JP2008536268A (ja) 2008-09-04
KR101250189B1 (ko) 2013-04-05
CN101151700B (zh) 2010-12-08
KR20070115946A (ko) 2007-12-06
JP5181249B2 (ja) 2013-04-10
EP1864312B1 (de) 2010-12-29
EP1864312A1 (de) 2007-12-12
US7417242B2 (en) 2008-08-26
TW200636794A (en) 2006-10-16
WO2006107726A1 (en) 2006-10-12
CN101151700A (zh) 2008-03-26
US20060219955A1 (en) 2006-10-05

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