DE602006010884D1 - Schaltungsanordnung und Verfahren zum Treiben einer spannungsseitigen Halbleiterschaltung - Google Patents

Schaltungsanordnung und Verfahren zum Treiben einer spannungsseitigen Halbleiterschaltung

Info

Publication number
DE602006010884D1
DE602006010884D1 DE602006010884T DE602006010884T DE602006010884D1 DE 602006010884 D1 DE602006010884 D1 DE 602006010884D1 DE 602006010884 T DE602006010884 T DE 602006010884T DE 602006010884 T DE602006010884 T DE 602006010884T DE 602006010884 D1 DE602006010884 D1 DE 602006010884D1
Authority
DE
Germany
Prior art keywords
voltage
driving
circuit
side semiconductor
circuit arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006010884T
Other languages
English (en)
Inventor
Giuseppe Bernacchia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Austria AG
Original Assignee
Infineon Technologies Austria AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Austria AG filed Critical Infineon Technologies Austria AG
Publication of DE602006010884D1 publication Critical patent/DE602006010884D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/5388—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with asymmetrical configuration of switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/26—Modifications for temporary blocking after receipt of control pulses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/133—Modifications for switching at zero crossing in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
DE602006010884T 2006-10-30 2006-10-30 Schaltungsanordnung und Verfahren zum Treiben einer spannungsseitigen Halbleiterschaltung Active DE602006010884D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06022626A EP1919082B1 (de) 2006-10-30 2006-10-30 Schaltungsanordnung und Verfahren zum Treiben einer spannungsseitigen Halbleiterschaltung

Publications (1)

Publication Number Publication Date
DE602006010884D1 true DE602006010884D1 (de) 2010-01-14

Family

ID=37726758

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006010884T Active DE602006010884D1 (de) 2006-10-30 2006-10-30 Schaltungsanordnung und Verfahren zum Treiben einer spannungsseitigen Halbleiterschaltung

Country Status (3)

Country Link
US (1) US7710167B2 (de)
EP (1) EP1919082B1 (de)
DE (1) DE602006010884D1 (de)

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US7518352B2 (en) * 2007-05-11 2009-04-14 Freescale Semiconductor, Inc. Bootstrap clamping circuit for DC/DC regulators and method thereof
WO2008155917A1 (ja) * 2007-06-19 2008-12-24 Panasonic Corporation スイッチング素子駆動回路
US7928719B2 (en) * 2008-01-07 2011-04-19 Shenzhen Sts Microelectronics Co., Ltd. Zero current detector for a DC-DC converter
US8659275B2 (en) * 2008-01-11 2014-02-25 International Rectifier Corporation Highly efficient III-nitride power conversion circuit
CN101728389B (zh) * 2008-10-29 2014-01-29 飞思卡尔半导体公司 Buck降压转换器衬底噪声的被动消除方法
FR2944396B1 (fr) * 2008-12-22 2012-03-23 Valeo Systemes De Controle Moteur Convertisseur de tension continue-continue comportant une capacite de pompe de charge
US8154334B2 (en) * 2009-07-21 2012-04-10 Intersil America Inc. System and method for pre-charging a bootstrap capacitor in a switching regulator with high pre-bias voltage
US9397571B2 (en) * 2010-06-23 2016-07-19 Volterra Semiconductor Corporation Controlled delivery of a charging current to a boost capacitor of a voltage regulator
JP2012010523A (ja) * 2010-06-25 2012-01-12 On Semiconductor Trading Ltd スイッチング制御回路、電源回路
CN202094794U (zh) * 2011-05-18 2011-12-28 南京博兰得电子科技有限公司 一种自举型门极驱动控制电路
US9994179B2 (en) * 2012-07-25 2018-06-12 Infineon Technologies Austria Ag Circuit arrangements and a method for receiving information
KR101432139B1 (ko) * 2012-09-05 2014-08-20 주식회사 실리콘웍스 시스템 온 칩 구현이 가능하고 안전한 부트스트랩 기능을 제공하는 스위칭 모드 컨버터 및 그 제어 방법
US9625932B2 (en) 2012-09-05 2017-04-18 Silicon Works Co., Ltd. Switching mode converter having 100% duty cycle mode and method for controlling thereof
WO2014041389A1 (en) * 2012-09-12 2014-03-20 Freescale Semiconductor, Inc. A charging circuit, an inductive load control circuit, an internal combustion engine, a vehicle and a method of charging a bootstrap storage element
US9148054B2 (en) * 2013-03-14 2015-09-29 Volterra Semiconductor LLC Voltage regulators with kickback protection
CN104426359B (zh) * 2013-09-06 2018-07-06 上海宝芯源功率半导体有限公司 一种集成结型场效应晶体管的自举电路及自举方法
JP6065808B2 (ja) * 2013-10-24 2017-01-25 三菱電機株式会社 半導体装置及び半導体モジュール
TWI521847B (zh) * 2014-04-29 2016-02-11 鉅晶電子股份有限公司 高壓靴帶式閘極驅動裝置
US9742388B2 (en) * 2014-05-28 2017-08-22 Sharp Kabushiki Kaisha Driver circuit
US9941876B2 (en) * 2015-06-08 2018-04-10 Texas Instruments Incorporated Bootstrap diode circuits
US10277217B2 (en) 2015-12-14 2019-04-30 Woodward, Inc. Controlled bootstrap driver for high side electronic switching device
US9705423B1 (en) 2016-02-24 2017-07-11 Woodward, Inc. Controlled bootstrap driver for high side electronic switching device
CN107123977B (zh) * 2016-02-24 2019-04-19 比亚迪股份有限公司 晶体管的驱动电路
US10116297B1 (en) * 2017-06-19 2018-10-30 Psemi Corporation DC-coupled high-voltage level shifter
DE102017117031A1 (de) * 2017-07-27 2019-01-31 Dr. Ing. H.C. F. Porsche Aktiengesellschaft Nachladeschaltung für modulare Multilevelkonverter
IT201800003339A1 (it) * 2018-03-07 2019-09-07 St Microelectronics Srl Circuito di pilotaggio di un semi-ponte, relativo circuito integrato e sistema
US10601435B2 (en) * 2018-05-23 2020-03-24 Mediatek Inc. Initial booting bootstrap circuit and associated analog-to-digital converter
US10673337B1 (en) * 2018-12-28 2020-06-02 Texas Instruments Incorporated Switched-mode DC/DC converter having a bootstrapped high-side driver
CN109787456A (zh) * 2019-02-28 2019-05-21 中国电子科技集团公司第五十八研究所 一种栅驱动芯片自举电路
US10601302B1 (en) * 2019-04-04 2020-03-24 Navitas Semiconductor, Inc. Bootstrap power supply circuit
US10554112B1 (en) 2019-04-04 2020-02-04 Navitas Semiconductor, Inc. GaN driver circuit
JP7308137B2 (ja) * 2019-12-03 2023-07-13 ローム株式会社 スイッチング回路のゲート駆動回路および制御回路、スイッチング電源
CN110994996B (zh) * 2019-12-31 2021-03-23 思瑞浦微电子科技（苏州）股份有限公司 异步降压dcdc芯片及基于异步降压dcdc芯片的自举电路

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IT1221251B (it) * 1988-02-25 1990-06-27 Sgs Thomson Microelectronics Circuito mos per il pilotaggio di un carico dal lato alto della alimentazione
US5365118A (en) * 1992-06-04 1994-11-15 Linear Technology Corp. Circuit for driving two power mosfets in a half-bridge configuration
US5705919A (en) * 1996-09-30 1998-01-06 Linear Technology Corporation Low drop-out switching regulator architecture
US5719521A (en) * 1996-10-29 1998-02-17 Philips Electronics North America Corporation Integrated half-bridge timing control circuit
US6037720A (en) * 1998-10-23 2000-03-14 Philips Electronics North America Corporation Level shifter
US6353345B1 (en) * 2000-04-04 2002-03-05 Philips Electronics North America Corporation Low cost half bridge driver integrated circuit with capability of using high threshold voltage DMOS
DE10103144A1 (de) 2001-01-24 2002-08-01 Infineon Technologies Ag Halbbrückenschaltung
JP2006034030A (ja) * 2004-07-20 2006-02-02 Renesas Technology Corp ゲートドライブ回路、ハイサイド側ドライブモジュールおよびドライブ装置
US7106105B2 (en) * 2004-07-21 2006-09-12 Fairchild Semiconductor Corporation High voltage integrated circuit driver with a high voltage PMOS bootstrap diode emulator
US7126388B2 (en) * 2004-12-16 2006-10-24 Semiconductor Components Industries, L.L.C. Power MOSFET driver and method therefor

Also Published As

Publication number Publication date
US20080100378A1 (en) 2008-05-01
US7710167B2 (en) 2010-05-04
EP1919082B1 (de) 2009-12-02
EP1919082A1 (de) 2008-05-07

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