DE602005021382D1 - Verfahren zur Herstellung eines Auswahl-Bauelements mit reduziertem Leckstrom, sowie ein Auswahl-Bauelement, insbesondere für Phasenwechsel-Speicher - Google Patents

Verfahren zur Herstellung eines Auswahl-Bauelements mit reduziertem Leckstrom, sowie ein Auswahl-Bauelement, insbesondere für Phasenwechsel-Speicher

Info

Publication number
DE602005021382D1
DE602005021382D1 DE602005021382T DE602005021382T DE602005021382D1 DE 602005021382 D1 DE602005021382 D1 DE 602005021382D1 DE 602005021382 T DE602005021382 T DE 602005021382T DE 602005021382 T DE602005021382 T DE 602005021382T DE 602005021382 D1 DE602005021382 D1 DE 602005021382D1
Authority
DE
Germany
Prior art keywords
selection
producing
phase change
leakage current
change memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005021382T
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English (en)
Inventor
Charles Dennison
John Peters
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE602005021382D1 publication Critical patent/DE602005021382D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
DE602005021382T 2005-12-23 2005-12-23 Verfahren zur Herstellung eines Auswahl-Bauelements mit reduziertem Leckstrom, sowie ein Auswahl-Bauelement, insbesondere für Phasenwechsel-Speicher Active DE602005021382D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05112912A EP1801896B1 (de) 2005-12-23 2005-12-23 Verfahren zur Herstellung eines Auswahl-Bauelements mit reduziertem Leckstrom, sowie ein Auswahl-Bauelement, insbesondere für Phasenwechsel-Speicher

Publications (1)

Publication Number Publication Date
DE602005021382D1 true DE602005021382D1 (de) 2010-07-01

Family

ID=36590308

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005021382T Active DE602005021382D1 (de) 2005-12-23 2005-12-23 Verfahren zur Herstellung eines Auswahl-Bauelements mit reduziertem Leckstrom, sowie ein Auswahl-Bauelement, insbesondere für Phasenwechsel-Speicher

Country Status (3)

Country Link
US (1) US20070158698A1 (de)
EP (1) EP1801896B1 (de)
DE (1) DE602005021382D1 (de)

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US7906368B2 (en) * 2007-06-29 2011-03-15 International Business Machines Corporation Phase change memory with tapered heater
TWI354387B (en) * 2007-11-16 2011-12-11 Ind Tech Res Inst Phase-change memory element and method for fabrica
US8530875B1 (en) * 2010-05-06 2013-09-10 Micron Technology, Inc. Phase change memory including ovonic threshold switch with layered electrode and methods for forming same
US8394667B2 (en) * 2010-07-14 2013-03-12 Micron Technology, Inc. Methods of forming memory cells, and methods of patterning chalcogenide-containing stacks
US8486743B2 (en) * 2011-03-23 2013-07-16 Micron Technology, Inc. Methods of forming memory cells
US8994489B2 (en) 2011-10-19 2015-03-31 Micron Technology, Inc. Fuses, and methods of forming and using fuses
US8546231B2 (en) 2011-11-17 2013-10-01 Micron Technology, Inc. Memory arrays and methods of forming memory cells
US8723155B2 (en) 2011-11-17 2014-05-13 Micron Technology, Inc. Memory cells and integrated devices
US9252188B2 (en) 2011-11-17 2016-02-02 Micron Technology, Inc. Methods of forming memory cells
US9136467B2 (en) 2012-04-30 2015-09-15 Micron Technology, Inc. Phase change memory cells and methods of forming phase change memory cells
US8765555B2 (en) 2012-04-30 2014-07-01 Micron Technology, Inc. Phase change memory cells and methods of forming phase change memory cells
US9553262B2 (en) 2013-02-07 2017-01-24 Micron Technology, Inc. Arrays of memory cells and methods of forming an array of memory cells
US9166158B2 (en) 2013-02-25 2015-10-20 Micron Technology, Inc. Apparatuses including electrodes having a conductive barrier material and methods of forming same
US20150028280A1 (en) 2013-07-26 2015-01-29 Micron Technology, Inc. Memory cell with independently-sized elements
US9881971B2 (en) 2014-04-01 2018-01-30 Micron Technology, Inc. Memory arrays
US9362494B2 (en) 2014-06-02 2016-06-07 Micron Technology, Inc. Array of cross point memory cells and methods of forming an array of cross point memory cells
US9343506B2 (en) 2014-06-04 2016-05-17 Micron Technology, Inc. Memory arrays with polygonal memory cells having specific sidewall orientations
KR102495000B1 (ko) 2016-03-18 2023-02-02 삼성전자주식회사 반도체 소자 및 이의 제조방법
US10256406B2 (en) 2016-05-16 2019-04-09 Micron Technology, Inc. Semiconductor structures including liners and related methods
KR20170130245A (ko) * 2016-05-18 2017-11-28 에스케이하이닉스 주식회사 스위칭 소자, 저항 변화 메모리 장치, 스위칭 소자의 제조 방법, 및 저항 변화 메모리 장치의 제조 방법
KR20180008992A (ko) * 2016-07-15 2018-01-25 삼성전자주식회사 가변 저항 메모리 소자 및 그 제조 방법
US11152569B2 (en) * 2017-11-30 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. PCRAM structure with selector device
FR3076081B1 (fr) 2017-12-26 2022-06-24 Commissariat Energie Atomique Cellule elementaire comportant une memoire resistive et un selecteur, etage et matrice d'etages comportant une pluralite de ces cellules et procede de fabrication associe
US10580976B2 (en) * 2018-03-19 2020-03-03 Sandisk Technologies Llc Three-dimensional phase change memory device having a laterally constricted element and method of making the same
US11227872B2 (en) * 2019-04-25 2022-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. FeRAM MFM structure with selective electrode etch
JP2021048224A (ja) * 2019-09-18 2021-03-25 キオクシア株式会社 不揮発性記憶装置
US10978511B1 (en) * 2019-10-15 2021-04-13 Macronix International Co., Ltd. Semiconductor device and memory cell
KR20210124843A (ko) 2020-04-07 2021-10-15 삼성전자주식회사 메모리 소자
KR20230020815A (ko) * 2021-08-04 2023-02-13 삼성전자주식회사 스위칭 소자 및 이를 포함하는 메모리 소자
US20230397440A1 (en) * 2022-06-07 2023-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Novel selector for memory device

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US4845533A (en) * 1986-08-22 1989-07-04 Energy Conversion Devices, Inc. Thin film electrical devices with amorphous carbon electrodes and method of making same
US5177567A (en) * 1991-07-19 1993-01-05 Energy Conversion Devices, Inc. Thin-film structure for chalcogenide electrical switching devices and process therefor
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US7589343B2 (en) * 2002-12-13 2009-09-15 Intel Corporation Memory and access device and method therefor
KR100560659B1 (ko) * 2003-03-21 2006-03-16 삼성전자주식회사 상변화 기억 소자 및 그 제조 방법
US7399655B2 (en) * 2003-08-04 2008-07-15 Ovonyx, Inc. Damascene conductive line for contacting an underlying memory element
US7105408B2 (en) * 2004-09-24 2006-09-12 Intel Corporation Phase change memory with a select device having a breakdown layer
US6972429B1 (en) * 2004-12-16 2005-12-06 Macronix International Co, Ltd. Chalcogenide random access memory and method of fabricating the same

Also Published As

Publication number Publication date
EP1801896B1 (de) 2010-05-19
EP1801896A1 (de) 2007-06-27
US20070158698A1 (en) 2007-07-12

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