DE602005008468D1 - Rechteckiger halbleiterträger für die mikroelektronik und herstellungsverfahren dafür - Google Patents

Rechteckiger halbleiterträger für die mikroelektronik und herstellungsverfahren dafür

Info

Publication number
DE602005008468D1
DE602005008468D1 DE602005008468T DE602005008468T DE602005008468D1 DE 602005008468 D1 DE602005008468 D1 DE 602005008468D1 DE 602005008468 T DE602005008468 T DE 602005008468T DE 602005008468 T DE602005008468 T DE 602005008468T DE 602005008468 D1 DE602005008468 D1 DE 602005008468D1
Authority
DE
Germany
Prior art keywords
microelectronics
manufacturing
method therefor
rectangular semiconductor
rectangular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005008468T
Other languages
English (en)
Inventor
Simon Deleonibus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE602005008468D1 publication Critical patent/DE602005008468D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
DE602005008468T 2004-11-30 2005-11-24 Rechteckiger halbleiterträger für die mikroelektronik und herstellungsverfahren dafür Active DE602005008468D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0412699A FR2878648B1 (fr) 2004-11-30 2004-11-30 Support semi-conducteur rectangulaire pour la microelectronique et procede de realisation d'un tel support
PCT/FR2005/002923 WO2006058984A1 (fr) 2004-11-30 2005-11-24 Support semi-conducteur rectangulaire pour la microelectronique et procede de realisation d’un tel support

Publications (1)

Publication Number Publication Date
DE602005008468D1 true DE602005008468D1 (de) 2008-09-04

Family

ID=34952277

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005008468T Active DE602005008468D1 (de) 2004-11-30 2005-11-24 Rechteckiger halbleiterträger für die mikroelektronik und herstellungsverfahren dafür

Country Status (6)

Country Link
US (1) US7466019B2 (de)
EP (1) EP1817794B1 (de)
JP (1) JP2008522422A (de)
DE (1) DE602005008468D1 (de)
FR (1) FR2878648B1 (de)
WO (1) WO2006058984A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8822306B2 (en) 2010-09-30 2014-09-02 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
US8404562B2 (en) * 2010-09-30 2013-03-26 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
EP2914071A1 (de) * 2014-02-28 2015-09-02 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Wärmeverteiler in mehrschichtigen Wärmeaufbauten
KR102374256B1 (ko) * 2015-02-23 2022-03-15 삼성전기주식회사 회로기판 및 회로기판 제조방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
DE2536174C3 (de) * 1975-08-13 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von polykristallinen Siliciumschichten für Halbleiterbauelemente
US4466938A (en) * 1979-08-23 1984-08-21 General Electric Company Method for reducing damage to diamond crystals during sintering
JPH07116606B2 (ja) * 1987-10-31 1995-12-13 住友電気工業株式会社 ダイヤモンド被覆炭素部材
US5391895A (en) * 1992-09-21 1995-02-21 Kobe Steel Usa, Inc. Double diamond mesa vertical field effect transistor
JPH08505009A (ja) * 1992-12-18 1996-05-28 ハリス・コーポレーション ダイヤモンド上シリコンの回路構造物及びその製造方法
US5494753A (en) * 1994-06-20 1996-02-27 General Electric Company Articles having thermal conductors of graphite
CA2249288A1 (en) * 1996-03-18 1997-12-24 Martin G. Bradley Diamond film deposition
JPH09326355A (ja) * 1996-06-04 1997-12-16 Hoya Corp 支持体付薄膜形成方法およびｘ線マスク製造方法
JPH11307747A (ja) * 1998-04-17 1999-11-05 Nec Corp Ｓｏｉ基板およびその製造方法
US7132309B2 (en) * 2003-04-22 2006-11-07 Chien-Min Sung Semiconductor-on-diamond devices and methods of forming
FR2823596B1 (fr) * 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
JP4009090B2 (ja) * 2001-11-08 2007-11-14 株式会社神戸製鋼所 ダイヤモンド被覆非ダイヤモンド炭素部材の製造方法

Also Published As

Publication number Publication date
US7466019B2 (en) 2008-12-16
EP1817794A1 (de) 2007-08-15
FR2878648A1 (fr) 2006-06-02
JP2008522422A (ja) 2008-06-26
WO2006058984A1 (fr) 2006-06-08
EP1817794B1 (de) 2008-07-23
FR2878648B1 (fr) 2007-02-02
US20080001274A1 (en) 2008-01-03

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Legal Events

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8364 No opposition during term of opposition