DE602004018595D1 - Reinigungs-Gaszusammensetzung zur Reinigung einer Vorrichtung und Reinigungsverfahren - Google Patents

Reinigungs-Gaszusammensetzung zur Reinigung einer Vorrichtung und Reinigungsverfahren

Info

Publication number
DE602004018595D1
DE602004018595D1 DE602004018595T DE602004018595T DE602004018595D1 DE 602004018595 D1 DE602004018595 D1 DE 602004018595D1 DE 602004018595 T DE602004018595 T DE 602004018595T DE 602004018595 T DE602004018595 T DE 602004018595T DE 602004018595 D1 DE602004018595 D1 DE 602004018595D1
Authority
DE
Germany
Prior art keywords
cleaning
gas composition
cleaning method
cleaning gas
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602004018595T
Other languages
English (en)
Inventor
Ryuichiro Isaki
Manabu Shinriki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Nippon Sanso Corp
Original Assignee
Taiyo Nippon Sanso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Nippon Sanso Corp filed Critical Taiyo Nippon Sanso Corp
Publication of DE602004018595D1 publication Critical patent/DE602004018595D1/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE602004018595T 2003-11-04 2004-10-26 Reinigungs-Gaszusammensetzung zur Reinigung einer Vorrichtung und Reinigungsverfahren Expired - Fee Related DE602004018595D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003374160A JP2005142198A (ja) 2003-11-04 2003-11-04 クリーニングガス及びクリーニング方法

Publications (1)

Publication Number Publication Date
DE602004018595D1 true DE602004018595D1 (de) 2009-02-05

Family

ID=34431252

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004018595T Expired - Fee Related DE602004018595D1 (de) 2003-11-04 2004-10-26 Reinigungs-Gaszusammensetzung zur Reinigung einer Vorrichtung und Reinigungsverfahren

Country Status (7)

Country Link
US (1) US20050096238A1 (de)
EP (1) EP1529854B1 (de)
JP (1) JP2005142198A (de)
KR (1) KR20050043601A (de)
CN (1) CN1614092A (de)
DE (1) DE602004018595D1 (de)
TW (1) TW200516138A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8317929B2 (en) * 2005-09-16 2012-11-27 Asml Netherlands B.V. Lithographic apparatus comprising an electrical discharge generator and method for cleaning an element of a lithographic apparatus
US20080153040A1 (en) * 2006-12-21 2008-06-26 Elpida Memory, Inc. Method for processing semiconductor wafer
JP2008235562A (ja) * 2007-03-20 2008-10-02 Taiyo Nippon Sanso Corp プラズマｃｖｄ成膜装置のクリーニング方法
JP5214316B2 (ja) * 2008-04-22 2013-06-19 大陽日酸株式会社 プラズマ成膜装置のクリーニング方法
CN101783296B (zh) * 2009-01-20 2011-09-14 中芯国际集成电路制造(上海)有限公司 栅极侧壁层的形成方法
JP5442403B2 (ja) 2009-11-18 2014-03-12 東京エレクトロン株式会社 基板処理装置及びそのクリーニング方法並びにプログラムを記録した記録媒体
JP5691163B2 (ja) * 2009-12-01 2015-04-01 セントラル硝子株式会社 クリーニングガス
JP5953681B2 (ja) * 2011-09-09 2016-07-20 イビデン株式会社 プリント配線板の製造方法
KR102400322B1 (ko) * 2013-12-30 2022-05-20 더 케무어스 컴퍼니 에프씨, 엘엘씨 챔버 세정 및 반도체 식각 기체
JP2017050413A (ja) * 2015-09-02 2017-03-09 日本ゼオン株式会社 プラズマエッチング方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
DE69128050D1 (de) * 1990-06-29 1997-12-04 Applied Materials Inc Zweistufiges Selbstreinigungsverfahren einer Reaktionskammer
US6047713A (en) * 1994-02-03 2000-04-11 Applied Materials, Inc. Method for cleaning a throttle valve
US5741577A (en) * 1994-11-10 1998-04-21 Kao Corporation Magnetic recording medium having a lubricant layer with a specified structure of a specified perfluoropolyether lubricant
US6060397A (en) * 1995-07-14 2000-05-09 Applied Materials, Inc. Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus
US5647953A (en) * 1995-12-22 1997-07-15 Lam Research Corporation Plasma cleaning method for removing residues in a plasma process chamber
JPH1027781A (ja) * 1996-07-10 1998-01-27 Daikin Ind Ltd エッチングガスおよびクリーニングガス
WO1999008805A1 (en) * 1997-08-20 1999-02-25 Air Liquide Electronics Chemicals & Services, Inc. Plasma cleaning and etching methods using non-global-warming compounds
US6673262B1 (en) * 1997-12-18 2004-01-06 Central Glass Company, Limited Gas for removing deposit and removal method using same
US6401728B2 (en) * 1999-03-01 2002-06-11 United Microelectronics Corp. Method for cleaning interior of etching chamber
CN1214444C (zh) * 2000-07-18 2005-08-10 昭和电工株式会社 用于半导体生产设备的净化气
JP4112198B2 (ja) * 2000-09-11 2008-07-02 財団法人地球環境産業技術研究機構 クリーニングガス及びエッチングガス、並びにチャンバークリーニング方法及びエッチング方法
US6569257B1 (en) * 2000-11-09 2003-05-27 Applied Materials Inc. Method for cleaning a process chamber
US6585830B2 (en) * 2000-11-30 2003-07-01 Agere Systems Inc. Method for cleaning tungsten from deposition wall chambers
US6584987B1 (en) * 2001-03-16 2003-07-01 Taiwan Semiconductor Manufacturing Company Method for improved cleaning in HDP-CVD process with reduced NF3 usage
JP2002359229A (ja) * 2001-06-01 2002-12-13 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置の製造装置
US20020185067A1 (en) * 2001-06-07 2002-12-12 International Business Machines Corporation Apparatus and method for in-situ cleaning of a throttle valve in a CVD system
US6846749B1 (en) * 2001-06-25 2005-01-25 Advanced Micro Devices, Inc. N-containing plasma etch process with reduced resist poisoning
US6767836B2 (en) * 2002-09-04 2004-07-27 Asm Japan K.K. Method of cleaning a CVD reaction chamber using an active oxygen species

Also Published As

Publication number Publication date
CN1614092A (zh) 2005-05-11
EP1529854A1 (de) 2005-05-11
JP2005142198A (ja) 2005-06-02
KR20050043601A (ko) 2005-05-11
US20050096238A1 (en) 2005-05-05
TW200516138A (en) 2005-05-16
EP1529854B1 (de) 2008-12-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee