DE60141602D1 - Projektionslithographie unter Verwendung einer Phasenschieberöffnung - Google Patents

Projektionslithographie unter Verwendung einer Phasenschieberöffnung

Info

Publication number
DE60141602D1
DE60141602D1 DE60141602T DE60141602T DE60141602D1 DE 60141602 D1 DE60141602 D1 DE 60141602D1 DE 60141602 T DE60141602 T DE 60141602T DE 60141602 T DE60141602 T DE 60141602T DE 60141602 D1 DE60141602 D1 DE 60141602D1
Authority
DE
Germany
Prior art keywords
phase shift
projection lithography
shift aperture
aperture
lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60141602T
Other languages
English (en)
Inventor
Uwe Paul Schroeder
Tobias Mono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE60141602D1 publication Critical patent/DE60141602D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE60141602T 2000-12-21 2001-11-29 Projektionslithographie unter Verwendung einer Phasenschieberöffnung Expired - Lifetime DE60141602D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/745,676 US6897943B2 (en) 2000-12-21 2000-12-21 Method and apparatus for aerial image improvement in projection lithography using a phase shifting aperture
PCT/US2001/045189 WO2002052348A1 (en) 2000-12-21 2001-11-29 Projection lithography using a phase shifting aperture

Publications (1)

Publication Number Publication Date
DE60141602D1 true DE60141602D1 (de) 2010-04-29

Family

ID=24997756

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60141602T Expired - Lifetime DE60141602D1 (de) 2000-12-21 2001-11-29 Projektionslithographie unter Verwendung einer Phasenschieberöffnung

Country Status (7)

Country Link
US (1) US6897943B2 (de)
EP (1) EP1346261B1 (de)
JP (1) JP3872015B2 (de)
KR (1) KR20030082556A (de)
CN (1) CN1282038C (de)
DE (1) DE60141602D1 (de)
WO (1) WO2002052348A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6794100B2 (en) * 2001-08-30 2004-09-21 Micron Technology, Inc. Method for controlling radiation beam intensity directed to microlithographic substrates
US6784975B2 (en) * 2001-08-30 2004-08-31 Micron Technology, Inc. Method and apparatus for irradiating a microlithographic substrate
US6894765B2 (en) * 2003-10-14 2005-05-17 Micron Technology, Inc. Methods and systems for controlling radiation beam characteristics for microlithographic processing
US7446855B2 (en) * 2005-07-25 2008-11-04 Micron Technology, Inc Methods and apparatuses for configuring radiation in microlithographic processing of workpieces using an adjustment structure
US7838178B2 (en) * 2007-08-13 2010-11-23 Micron Technology, Inc. Masks for microlithography and methods of making and using such masks
US20140211175A1 (en) * 2013-01-31 2014-07-31 Globalfoundries Inc. Enhancing resolution in lithographic processes using high refractive index fluids

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5348837A (en) * 1991-09-24 1994-09-20 Hitachi, Ltd. Projection exposure apparatus and pattern forming method for use therewith
JPH06224106A (ja) * 1993-01-26 1994-08-12 Nikon Corp 投影露光装置
US5642183A (en) * 1993-08-27 1997-06-24 Sharp Kabushiki Kaisha Spatial filter used in a reduction-type projection printing apparatus
JPH08203807A (ja) * 1995-01-26 1996-08-09 Nikon Corp 投影露光装置

Also Published As

Publication number Publication date
CN1282038C (zh) 2006-10-25
CN1483158A (zh) 2004-03-17
EP1346261A1 (de) 2003-09-24
JP2004517474A (ja) 2004-06-10
US20040207827A1 (en) 2004-10-21
US6897943B2 (en) 2005-05-24
JP3872015B2 (ja) 2007-01-24
WO2002052348A1 (en) 2002-07-04
EP1346261B1 (de) 2010-03-17
KR20030082556A (ko) 2003-10-22

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Legal Events

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