DE60129605D1 - Ein verfahren zur herstellung von eingebetteten vertikal-dram-zellen und logikgates mit zweifacher arbeitsfunktion - Google Patents
Ein verfahren zur herstellung von eingebetteten vertikal-dram-zellen und logikgates mit zweifacher arbeitsfunktionInfo
- Publication number
- DE60129605D1 DE60129605D1 DE60129605T DE60129605T DE60129605D1 DE 60129605 D1 DE60129605 D1 DE 60129605D1 DE 60129605 T DE60129605 T DE 60129605T DE 60129605 T DE60129605 T DE 60129605T DE 60129605 D1 DE60129605 D1 DE 60129605D1
- Authority
- DE
- Germany
- Prior art keywords
- logic gates
- dram cells
- working function
- double working
- embedded vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/488—Word lines
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US725412 | 2000-11-29 | ||
US09/725,412 US6258659B1 (en) | 2000-11-29 | 2000-11-29 | Embedded vertical DRAM cells and dual workfunction logic gates |
PCT/US2001/044625 WO2002045130A2 (en) | 2000-11-29 | 2001-11-28 | Embedded vertical dram cells and dual workfunction logic gates |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60129605D1 true DE60129605D1 (de) | 2007-09-06 |
DE60129605T2 DE60129605T2 (de) | 2008-06-05 |
Family
ID=24914450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60129605T Expired - Lifetime DE60129605T2 (de) | 2000-11-29 | 2001-11-28 | Ein verfahren zur herstellung von eingebetteten vertikal-dram-zellen und logikgates mit zweifacher arbeitsfunktion |
Country Status (7)
Country | Link |
---|---|
US (1) | US6258659B1 (de) |
EP (1) | EP1396010B1 (de) |
KR (1) | KR100392210B1 (de) |
CN (1) | CN100336203C (de) |
DE (1) | DE60129605T2 (de) |
TW (1) | TW512494B (de) |
WO (1) | WO2002045130A2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001319928A (ja) | 2000-05-08 | 2001-11-16 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US6509226B1 (en) * | 2000-09-27 | 2003-01-21 | International Business Machines Corporation | Process for protecting array top oxide |
US6610573B2 (en) * | 2001-06-22 | 2003-08-26 | Infineon Technologies Ag | Method for forming a single wiring level for transistors with planar and vertical gates on the same substrate |
US6429068B1 (en) * | 2001-07-02 | 2002-08-06 | International Business Machines Corporation | Structure and method of fabricating embedded vertical DRAM arrays with silicided bitline and polysilicon interconnect |
US6716734B2 (en) | 2001-09-28 | 2004-04-06 | Infineon Technologies Ag | Low temperature sidewall oxidation of W/WN/poly-gatestack |
US6709926B2 (en) * | 2002-05-31 | 2004-03-23 | International Business Machines Corporation | High performance logic and high density embedded dram with borderless contact and antispacer |
US6635526B1 (en) * | 2002-06-07 | 2003-10-21 | Infineon Technologies Ag | Structure and method for dual work function logic devices in vertical DRAM process |
US6750097B2 (en) | 2002-07-30 | 2004-06-15 | International Business Machines Corporation | Method of fabricating a patterened SOI embedded DRAM/eDRAM having a vertical device cell and device formed thereby |
US6849495B2 (en) * | 2003-02-28 | 2005-02-01 | Infineon Technologies Ag | Selective silicidation scheme for memory devices |
US6972266B2 (en) * | 2003-09-30 | 2005-12-06 | International Business Machines Corporation | Top oxide nitride liner integration scheme for vertical DRAM |
US7018891B2 (en) * | 2003-12-16 | 2006-03-28 | International Business Machines Corporation | Ultra-thin Si channel CMOS with improved series resistance |
US9190494B2 (en) | 2008-02-19 | 2015-11-17 | Micron Technology, Inc. | Systems and devices including fin field-effect transistors each having U-shaped semiconductor fin |
US7742324B2 (en) * | 2008-02-19 | 2010-06-22 | Micron Technology, Inc. | Systems and devices including local data lines and methods of using, making, and operating the same |
US8866254B2 (en) | 2008-02-19 | 2014-10-21 | Micron Technology, Inc. | Devices including fin transistors robust to gate shorts and methods of making the same |
US7915659B2 (en) | 2008-03-06 | 2011-03-29 | Micron Technology, Inc. | Devices with cavity-defined gates and methods of making the same |
KR100960443B1 (ko) | 2008-03-18 | 2010-05-28 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
US7808042B2 (en) | 2008-03-20 | 2010-10-05 | Micron Technology, Inc. | Systems and devices including multi-gate transistors and methods of using, making, and operating the same |
US7898857B2 (en) | 2008-03-20 | 2011-03-01 | Micron Technology, Inc. | Memory structure having volatile and non-volatile memory portions |
US8546876B2 (en) | 2008-03-20 | 2013-10-01 | Micron Technology, Inc. | Systems and devices including multi-transistor cells and methods of using, making, and operating the same |
US7969776B2 (en) | 2008-04-03 | 2011-06-28 | Micron Technology, Inc. | Data cells with drivers and methods of making and operating the same |
US8076229B2 (en) * | 2008-05-30 | 2011-12-13 | Micron Technology, Inc. | Methods of forming data cells and connections to data cells |
US8148776B2 (en) | 2008-09-15 | 2012-04-03 | Micron Technology, Inc. | Transistor with a passive gate |
US8294511B2 (en) | 2010-11-19 | 2012-10-23 | Micron Technology, Inc. | Vertically stacked fin transistors and methods of fabricating and operating the same |
US8536656B2 (en) * | 2011-01-10 | 2013-09-17 | International Business Machines Corporation | Self-aligned contacts for high k/metal gate process flow |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5065273A (en) * | 1990-12-04 | 1991-11-12 | International Business Machines Corporation | High capacity DRAM trench capacitor and methods of fabricating same |
JP3150496B2 (ja) * | 1993-06-30 | 2001-03-26 | 株式会社東芝 | 半導体記憶装置 |
US5827765A (en) | 1996-02-22 | 1998-10-27 | Siemens Aktiengesellschaft | Buried-strap formation in a dram trench capacitor |
JP2751909B2 (ja) * | 1996-02-26 | 1998-05-18 | 日本電気株式会社 | 半導体装置の製造方法 |
US5937296A (en) * | 1996-12-20 | 1999-08-10 | Siemens Aktiengesellschaft | Memory cell that includes a vertical transistor and a trench capacitor |
US5981332A (en) | 1997-09-30 | 1999-11-09 | Siemens Aktiengesellschaft | Reduced parasitic leakage in semiconductor devices |
US5893734A (en) * | 1998-09-14 | 1999-04-13 | Vanguard International Semiconductor Corporation | Method for fabricating capacitor-under-bit line (CUB) dynamic random access memory (DRAM) using tungsten landing plug contacts |
US6153902A (en) * | 1999-08-16 | 2000-11-28 | International Business Machines Corporation | Vertical DRAM cell with wordline self-aligned to storage trench |
US6261894B1 (en) * | 2000-11-03 | 2001-07-17 | International Business Machines Corporation | Method for forming dual workfunction high-performance support MOSFETs in EDRAM arrays |
-
2000
- 2000-11-29 US US09/725,412 patent/US6258659B1/en not_active Expired - Lifetime
-
2001
- 2001-11-14 KR KR10-2001-0070618A patent/KR100392210B1/ko not_active IP Right Cessation
- 2001-11-28 CN CNB018197310A patent/CN100336203C/zh not_active Expired - Fee Related
- 2001-11-28 TW TW090129414A patent/TW512494B/zh not_active IP Right Cessation
- 2001-11-28 WO PCT/US2001/044625 patent/WO2002045130A2/en active IP Right Grant
- 2001-11-28 DE DE60129605T patent/DE60129605T2/de not_active Expired - Lifetime
- 2001-11-28 EP EP01995964A patent/EP1396010B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1639860A (zh) | 2005-07-13 |
KR100392210B1 (ko) | 2003-07-23 |
WO2002045130A3 (en) | 2004-01-08 |
EP1396010A2 (de) | 2004-03-10 |
KR20020042420A (ko) | 2002-06-05 |
CN100336203C (zh) | 2007-09-05 |
DE60129605T2 (de) | 2008-06-05 |
TW512494B (en) | 2002-12-01 |
US6258659B1 (en) | 2001-07-10 |
WO2002045130A2 (en) | 2002-06-06 |
EP1396010B1 (de) | 2007-07-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: INTERNATIONAL BUSINESS MACHINES CORPORATION, A, US Owner name: QIMONDA NORTH AMERICA CORP., CARY, N.C., US |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: EPPING HERMANN FISCHER, PATENTANWALTSGESELLSCHAFT |
|
8364 | No opposition during term of opposition |