DE60124843D1 - Vorrichtung zur Ziehung eines Halbleiter-Einkristalles - Google Patents

Vorrichtung zur Ziehung eines Halbleiter-Einkristalles

Info

Publication number
DE60124843D1
DE60124843D1 DE60124843T DE60124843T DE60124843D1 DE 60124843 D1 DE60124843 D1 DE 60124843D1 DE 60124843 T DE60124843 T DE 60124843T DE 60124843 T DE60124843 T DE 60124843T DE 60124843 D1 DE60124843 D1 DE 60124843D1
Authority
DE
Germany
Prior art keywords
single crystal
semiconductor single
semiconductor
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60124843T
Other languages
English (en)
Other versions
DE60124843T2 (de
Inventor
Souroku Kawanishi
Masahito Watanabe
Minoru Eguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp, NEC Corp filed Critical Sumco Corp
Application granted granted Critical
Publication of DE60124843D1 publication Critical patent/DE60124843D1/de
Publication of DE60124843T2 publication Critical patent/DE60124843T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60124843T 2000-10-23 2001-10-17 Vorrichtung zur Ziehung eines Halbleiter-Einkristalles Expired - Lifetime DE60124843T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000322942A JP4689027B2 (ja) 2000-10-23 2000-10-23 半導体単結晶引上装置
JP2000322942 2000-10-23

Publications (2)

Publication Number Publication Date
DE60124843D1 true DE60124843D1 (de) 2007-01-11
DE60124843T2 DE60124843T2 (de) 2007-08-30

Family

ID=18800727

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60124843T Expired - Lifetime DE60124843T2 (de) 2000-10-23 2001-10-17 Vorrichtung zur Ziehung eines Halbleiter-Einkristalles

Country Status (5)

Country Link
US (1) US6579363B2 (de)
EP (1) EP1201795B1 (de)
JP (1) JP4689027B2 (de)
KR (1) KR100452234B1 (de)
DE (1) DE60124843T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3849639B2 (ja) * 2000-10-31 2006-11-22 信越半導体株式会社 シリコン半導体単結晶の製造装置及び製造方法
JP4015510B2 (ja) 2002-09-09 2007-11-28 日本エー・エス・エム株式会社 半導体集積回路の多層配線用層間絶縁膜及びその製造方法
DE102006034433B4 (de) * 2006-07-26 2018-03-22 Crystal Growing Systems Gmbh Kristallziehanlage, Unterstützungsvorrichtung und Verfahren zur Her-stellung von schweren Kristallen
DE102008047599B4 (de) * 2008-09-17 2012-12-20 Siltronic Ag Vorrichtung und Verfahren zum Ziehen eines Einkristalls

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1004818B (de) * 1953-12-23 1957-03-21 Siemens Ag Verfahren und Einrichtung zum Ziehen von Einkristallen
JPS6027682A (ja) * 1983-07-26 1985-02-12 Toshiba Corp 単結晶引上装置
JPS63252991A (ja) * 1987-04-09 1988-10-20 Mitsubishi Metal Corp 落下防止保持部を有するｃｚ単結晶
DE19529481A1 (de) * 1995-08-10 1997-02-13 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen
JP2956574B2 (ja) * 1996-02-28 1999-10-04 住友金属工業株式会社 単結晶引上げ装置
JPH09227281A (ja) * 1996-02-28 1997-09-02 Sumitomo Sitix Corp 単結晶引上げ装置
JP2990658B2 (ja) * 1996-09-03 1999-12-13 住友金属工業株式会社 単結晶引上装置
WO1998010125A1 (fr) * 1996-09-03 1998-03-12 Sumitomo Metal Industries, Ltd. Appareil pour tirage de monocristal
US5885347A (en) * 1997-01-29 1999-03-23 Komatsu, Ltd. Apparatus and method for lifting single crystals
JP3596226B2 (ja) * 1997-03-17 2004-12-02 信越半導体株式会社 単結晶保持装置
JPH11157983A (ja) * 1997-11-25 1999-06-15 Super Silicon Kenkyusho:Kk 単結晶成長装置及び単結晶成長方法
JP3228173B2 (ja) * 1997-03-27 2001-11-12 住友金属工業株式会社 単結晶製造方法
JPH11139897A (ja) * 1997-11-11 1999-05-25 Komatsu Electron Metals Co Ltd 結晶体引上げ装置の種結晶保持器
JP2959543B2 (ja) * 1997-12-12 1999-10-06 日本電気株式会社 半導体単結晶育成装置および結晶育成方法
JP2885240B1 (ja) * 1998-03-16 1999-04-19 日本電気株式会社 半導体結晶育成装置および育成方法
JP2000007490A (ja) * 1998-06-22 2000-01-11 Shin Etsu Handotai Co Ltd 単結晶保持装置
JP2950332B1 (ja) 1998-08-18 1999-09-20 日本電気株式会社 半導体結晶育成装置及び育成方法

Also Published As

Publication number Publication date
DE60124843T2 (de) 2007-08-30
US6579363B2 (en) 2003-06-17
KR20020031307A (ko) 2002-05-01
EP1201795A1 (de) 2002-05-02
EP1201795B1 (de) 2006-11-29
KR100452234B1 (ko) 2004-10-12
JP2002128592A (ja) 2002-05-09
US20020073919A1 (en) 2002-06-20
JP4689027B2 (ja) 2011-05-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SUMCO CORP., TOKIO/TOKYO, JP