DE60121697D1 - Verfahren zur Wiederabbildung in einem Flashspeicher und dafür geeignete Flashspeicherarchitektur - Google Patents

Verfahren zur Wiederabbildung in einem Flashspeicher und dafür geeignete Flashspeicherarchitektur

Info

Publication number
DE60121697D1
DE60121697D1 DE60121697T DE60121697T DE60121697D1 DE 60121697 D1 DE60121697 D1 DE 60121697D1 DE 60121697 T DE60121697 T DE 60121697T DE 60121697 T DE60121697 T DE 60121697T DE 60121697 D1 DE60121697 D1 DE 60121697D1
Authority
DE
Germany
Prior art keywords
flash memory
remapping
architecture suitable
suitable therefor
memory architecture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60121697T
Other languages
English (en)
Other versions
DE60121697T2 (de
Inventor
Bum-Soo Kim
Gui-Young Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE60121697D1 publication Critical patent/DE60121697D1/de
Publication of DE60121697T2 publication Critical patent/DE60121697T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
DE60121697T 2000-10-11 2001-04-11 Verfahren zum ansteuern von remapping in einem flash-speicher und in einer dafür geeigneten flash-speicher-architektur Expired - Lifetime DE60121697T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2000059731 2000-10-11
KR1020000059731A KR100644602B1 (ko) 2000-10-11 2000-10-11 플래시메모리를 위한 재사상 제어방법 및 그에 따른플래시 메모리의 구조

Publications (2)

Publication Number Publication Date
DE60121697D1 true DE60121697D1 (de) 2006-09-07
DE60121697T2 DE60121697T2 (de) 2007-08-02

Family

ID=36848389

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60121697T Expired - Lifetime DE60121697T2 (de) 2000-10-11 2001-04-11 Verfahren zum ansteuern von remapping in einem flash-speicher und in einer dafür geeigneten flash-speicher-architektur

Country Status (6)

Country Link
US (1) US6381176B1 (de)
EP (1) EP1197868B1 (de)
JP (1) JP3662510B2 (de)
KR (1) KR100644602B1 (de)
CN (1) CN1300803C (de)
DE (1) DE60121697T2 (de)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7702831B2 (en) * 2000-01-06 2010-04-20 Super Talent Electronics, Inc. Flash memory controller for electronic data flash card
US20060161725A1 (en) * 2005-01-20 2006-07-20 Lee Charles C Multiple function flash memory system
US7610438B2 (en) * 2000-01-06 2009-10-27 Super Talent Electronics, Inc. Flash-memory card for caching a hard disk drive with data-area toggling of pointers stored in a RAM lookup table
KR100484147B1 (ko) * 2002-07-26 2005-04-18 삼성전자주식회사 플래시 메모리 관리 방법
US7234036B1 (en) * 2002-10-28 2007-06-19 Sandisk Corporation Method and apparatus for resolving physical blocks associated with a common logical block
US6831865B2 (en) * 2002-10-28 2004-12-14 Sandisk Corporation Maintaining erase counts in non-volatile storage systems
US7039788B1 (en) 2002-10-28 2006-05-02 Sandisk Corporation Method and apparatus for splitting a logical block
US7035967B2 (en) * 2002-10-28 2006-04-25 Sandisk Corporation Maintaining an average erase count in a non-volatile storage system
US7103732B1 (en) 2002-10-28 2006-09-05 Sandisk Corporation Method and apparatus for managing an erase count block
KR101122511B1 (ko) * 2002-10-28 2012-03-15 쌘디스크 코포레이션 비휘발성 저장 시스템들에서 자동 웨어 레벨링
US7171536B2 (en) * 2002-10-28 2007-01-30 Sandisk Corporation Unusable block management within a non-volatile memory system
US7096313B1 (en) 2002-10-28 2006-08-22 Sandisk Corporation Tracking the least frequently erased blocks in non-volatile memory systems
DE10252059B3 (de) * 2002-11-08 2004-04-15 Infineon Technologies Ag Verfahren zum Betreiben einer Speicheranordnung
KR100526178B1 (ko) 2003-03-31 2005-11-03 삼성전자주식회사 플래시 메모리 액세스 장치 및 방법
KR100526186B1 (ko) * 2003-04-04 2005-11-03 삼성전자주식회사 플래시 메모리의 오류블록 관리방법 및 장치
US7139863B1 (en) 2003-09-26 2006-11-21 Storage Technology Corporation Method and system for improving usable life of memory devices using vector processing
US7188228B1 (en) * 2003-10-01 2007-03-06 Sandisk Corporation Hybrid mapping implementation within a non-volatile memory system
US7032087B1 (en) 2003-10-28 2006-04-18 Sandisk Corporation Erase count differential table within a non-volatile memory system
KR100608602B1 (ko) * 2003-12-10 2006-08-03 삼성전자주식회사 플래시 메모리, 이를 위한 사상 제어 장치 및 방법
KR100526188B1 (ko) * 2003-12-30 2005-11-04 삼성전자주식회사 플래시 메모리의 주소 사상 방법, 사상 정보 관리 방법 및상기 방법을 이용한 플래시 메모리
KR100526190B1 (ko) * 2004-02-06 2005-11-03 삼성전자주식회사 플래시 메모리의 재사상 방법
US20080147964A1 (en) * 2004-02-26 2008-06-19 Chow David Q Using various flash memory cells to build usb data flash cards with multiple partitions and autorun function
US7680977B2 (en) * 2004-02-26 2010-03-16 Super Talent Electronics, Inc. Page and block management algorithm for NAND flash
JP2006003966A (ja) * 2004-06-15 2006-01-05 Oki Electric Ind Co Ltd フラッシュメモリの書込方法
KR100568115B1 (ko) 2004-06-30 2006-04-05 삼성전자주식회사 점진적 머지 방법 및 그것을 이용한 메모리 시스템
US7130209B2 (en) * 2004-10-15 2006-10-31 Atmel Corporation Flexible OTP sector protection architecture for flash memories
KR100631765B1 (ko) * 2004-10-18 2006-10-09 삼성전자주식회사 플래시 메모리의 데이터 처리 장치 및 방법
US7958430B1 (en) * 2005-06-20 2011-06-07 Cypress Semiconductor Corporation Flash memory device and method
US7568075B2 (en) * 2005-09-22 2009-07-28 Hitachi, Ltd. Apparatus, system and method for making endurance of storage media
JP4933861B2 (ja) 2005-09-22 2012-05-16 株式会社日立製作所 ストレージ制御装置、データ管理システムおよびデータ管理方法
EP1791055A1 (de) * 2005-11-23 2007-05-30 Incard SA Chipkartendateisystem
US8194880B2 (en) * 2006-01-30 2012-06-05 Audience, Inc. System and method for utilizing omni-directional microphones for speech enhancement
KR100781517B1 (ko) * 2006-02-16 2007-12-03 삼성전자주식회사 비휘발성 메모리의 맵핑 정보 관리 장치 및 방법
US20080077590A1 (en) * 2006-09-22 2008-03-27 Honeywell International Inc. Efficient journaling and recovery mechanism for embedded flash file systems
KR100849221B1 (ko) 2006-10-19 2008-07-31 삼성전자주식회사 비휘발성 메모리의 관리 방법 및 비휘발성 메모리 기반의장치
KR100771519B1 (ko) * 2006-10-23 2007-10-30 삼성전자주식회사 플래시 메모리를 포함한 메모리 시스템 및 그것의 머지방법
KR100789406B1 (ko) 2006-11-03 2007-12-28 삼성전자주식회사 플래시 메모리 시스템 및 그것의 가비지 컬렉션 방법
TWI326028B (en) 2006-11-20 2010-06-11 Silicon Motion Inc Method for flash memory data management
KR100816761B1 (ko) * 2006-12-04 2008-03-25 삼성전자주식회사 낸드 플래시 메모리 및 에스램/노어 플래시 메모리를포함하는 메모리 카드 및 그것의 데이터 저장 방법
KR100857761B1 (ko) * 2007-06-14 2008-09-10 삼성전자주식회사 웨어 레벨링을 수행하는 메모리 시스템 및 그것의 쓰기방법
CN101364438B (zh) * 2007-08-08 2011-04-06 奇岩电子股份有限公司 提高与非门阵列闪存的存取装置与方法
US8533562B2 (en) * 2007-09-12 2013-09-10 Sandisk Technologies Inc. Data protection after possible write abort or erase abort
KR101413736B1 (ko) 2007-09-13 2014-07-02 삼성전자주식회사 향상된 신뢰성을 갖는 메모리 시스템 및 그것의웨어-레벨링 기법
KR101464338B1 (ko) 2007-10-25 2014-11-25 삼성전자주식회사 불휘발성 메모리 장치를 이용한 데이터 저장장치, 메모리시스템, 그리고 컴퓨터 시스템
JP4489127B2 (ja) * 2008-02-29 2010-06-23 株式会社東芝 半導体記憶装置
JP4439569B2 (ja) * 2008-04-24 2010-03-24 株式会社東芝 メモリシステム
US20090313416A1 (en) * 2008-06-16 2009-12-17 George Wayne Nation Computer main memory incorporating volatile and non-volatile memory
KR101497074B1 (ko) * 2008-06-17 2015-03-05 삼성전자주식회사 불휘발성 메모리 시스템 및 그것의 데이터 관리 방법
US8245244B2 (en) * 2008-08-26 2012-08-14 Intel Corporation Device, system, and method of executing a call to a routine within a transaction
TWI364661B (en) * 2008-09-25 2012-05-21 Silicon Motion Inc Access methods for a flash memory and memory devices
US8275933B2 (en) 2008-11-10 2012-09-25 Fusion-10, Inc Apparatus, system, and method for managing physical regions in a solid-state storage device
US8751860B2 (en) * 2009-06-03 2014-06-10 Micron Technology, Inc. Object oriented memory in solid state devices
TWI484334B (zh) * 2009-12-24 2015-05-11 Univ Nat Taiwan 非揮發記憶體的區域式管理方法
JP5269213B2 (ja) * 2010-02-02 2013-08-21 株式会社東芝 ストレージ機能を持つ通信装置
TWI447735B (zh) * 2010-02-05 2014-08-01 Phison Electronics Corp 記憶體管理與寫入方法及其可複寫式非揮發性記憶體控制器與儲存系統
CN102193870B (zh) * 2010-03-09 2014-06-25 群联电子股份有限公司 存储器管理与写入方法、存储器控制器与存储器存储系统
KR101666987B1 (ko) * 2010-04-20 2016-10-17 삼성전자주식회사 메모리 시스템 및 그것의 동작 방법
JP2012123499A (ja) 2010-12-07 2012-06-28 Toshiba Corp メモリシステム
CN103620562A (zh) * 2011-06-30 2014-03-05 惠普发展公司，有限责任合伙企业 包括用于将数据从活动存储器管芯拷贝至空闲存储器管芯的存储器模块拷贝引擎的存储器模块
US9239781B2 (en) 2012-02-07 2016-01-19 SMART Storage Systems, Inc. Storage control system with erase block mechanism and method of operation thereof
CN102789403B (zh) * 2012-07-11 2015-08-12 忆正科技（武汉）有限公司 一种闪存控制器及其控制方法
US9671962B2 (en) 2012-11-30 2017-06-06 Sandisk Technologies Llc Storage control system with data management mechanism of parity and method of operation thereof
KR102067029B1 (ko) 2012-12-13 2020-01-16 삼성전자주식회사 반도체 메모리 장치 및 메모리 시스템
US9329928B2 (en) 2013-02-20 2016-05-03 Sandisk Enterprise IP LLC. Bandwidth optimization in a non-volatile memory system
KR102015053B1 (ko) * 2013-02-20 2019-08-27 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 데이터 처리 방법
KR102101304B1 (ko) 2013-03-15 2020-04-16 삼성전자주식회사 메모리 컨트롤러 및 메모리 컨트롤러의 동작 방법
US10049037B2 (en) 2013-04-05 2018-08-14 Sandisk Enterprise Ip Llc Data management in a storage system
US9543025B2 (en) 2013-04-11 2017-01-10 Sandisk Technologies Llc Storage control system with power-off time estimation mechanism and method of operation thereof
US10546648B2 (en) 2013-04-12 2020-01-28 Sandisk Technologies Llc Storage control system with data management mechanism and method of operation thereof
US9367353B1 (en) 2013-06-25 2016-06-14 Sandisk Technologies Inc. Storage control system with power throttling mechanism and method of operation thereof
US9244519B1 (en) 2013-06-25 2016-01-26 Smart Storage Systems. Inc. Storage system with data transfer rate adjustment for power throttling
US9361222B2 (en) 2013-08-07 2016-06-07 SMART Storage Systems, Inc. Electronic system with storage drive life estimation mechanism and method of operation thereof
US9448946B2 (en) 2013-08-07 2016-09-20 Sandisk Technologies Llc Data storage system with stale data mechanism and method of operation thereof
US9431113B2 (en) * 2013-08-07 2016-08-30 Sandisk Technologies Llc Data storage system with dynamic erase block grouping mechanism and method of operation thereof
US9747157B2 (en) 2013-11-08 2017-08-29 Sandisk Technologies Llc Method and system for improving error correction in data storage
TWI548991B (zh) * 2014-02-14 2016-09-11 群聯電子股份有限公司 記憶體管理方法、記憶體控制電路單元與記憶體儲存裝置
US9405618B2 (en) * 2014-05-28 2016-08-02 Infineon Technologies Ag Marker programming in non-volatile memories
KR102491624B1 (ko) * 2015-07-27 2023-01-25 삼성전자주식회사 데이터 저장 장치의 작동 방법과 상기 데이터 저장 장치를 포함하는 시스템의 작동 방법
FR3051574A1 (fr) * 2016-05-20 2017-11-24 Proton World Int Nv Gestion du stockage dans une memoire flash
TWI661299B (zh) * 2018-04-30 2019-06-01 大陸商深圳大心電子科技有限公司 記憶體管理方法以及儲存控制器
CN113568579B (zh) * 2021-07-28 2022-05-03 深圳市高川自动化技术有限公司 一种存储器、数据存储方法以及数据读取方法
TWI804236B (zh) * 2022-03-16 2023-06-01 群聯電子股份有限公司 記憶體管理方法、記憶體儲存裝置及記憶體控制電路單元

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6230233B1 (en) * 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US5404485A (en) * 1993-03-08 1995-04-04 M-Systems Flash Disk Pioneers Ltd. Flash file system
US5485595A (en) * 1993-03-26 1996-01-16 Cirrus Logic, Inc. Flash memory mass storage architecture incorporating wear leveling technique without using cam cells
JPH08212019A (ja) * 1995-01-31 1996-08-20 Mitsubishi Electric Corp 半導体ディスク装置
US5937425A (en) * 1997-10-16 1999-08-10 M-Systems Flash Disk Pioneers Ltd. Flash file system optimized for page-mode flash technologies
US6034891A (en) * 1997-12-01 2000-03-07 Micron Technology, Inc. Multi-state flash memory defect management

Also Published As

Publication number Publication date
KR100644602B1 (ko) 2006-11-10
US20020041517A1 (en) 2002-04-11
JP2002123421A (ja) 2002-04-26
JP3662510B2 (ja) 2005-06-22
EP1197868A2 (de) 2002-04-17
CN1348191A (zh) 2002-05-08
KR20020028624A (ko) 2002-04-17
EP1197868B1 (de) 2006-07-26
DE60121697T2 (de) 2007-08-02
US6381176B1 (en) 2002-04-30
EP1197868A3 (de) 2004-01-14
CN1300803C (zh) 2007-02-14

Similar Documents

Publication Publication Date Title
DE60121697D1 (de) Verfahren zur Wiederabbildung in einem Flashspeicher und dafür geeignete Flashspeicherarchitektur
DE69707752D1 (de) Verfahren und System zur Klassenspeicherung in einem Festspeicher
DE602004015813D1 (de) Speichervorrichtung und verfahren zur löschung derselben
DE60140391D1 (de) Verfahren zur Verschlechterungsfeststellung und dazu geeignete Vorrichtung
DE10196687T1 (de) Verfahren und Einrichtung zur Rekonfiguration gestripter logischer Gegenstände in einem Plattengruppenspeicher
DE10196685T1 (de) System und Verfahren zur hierarchischen Datenspeicherung
DE602005022512D1 (de) Vorrichtung und Verfahren zur Datenverwaltung in einem Flash-Speicher
DE60222402D1 (de) Verfahren und system zur spekulativen ungültigkeitserklärung von zeilen in einem cachespeicher
DE60103592D1 (de) Verfahren und Vorrichtung zur Verringerung von Rauschen in einem Schaltregler
DE60133166D1 (de) Verfahren und Vorrichtung zur Volumendarstellung
DE60323885D1 (de) Gerät und verfahren zur befehlenprädikation in einem datenverarbeitungssystem
DE60120810D1 (de) Verfahren zur Dokumenterkennung und -indexierung
DE60109748D1 (de) Verfahren und gerät zur ausführungsunterbrechung in einem prozessor
DE60207148D1 (de) Vorrichtung und Verfahren zur Gewinnung von Zellen
DE602005013353D1 (de) Verfahren und vorrichtung für geteilte e/a in einem lade-speicherfeld
DE60324117D1 (de) Multibit Speicheranordnung und Verfahren zur Programmierung und zum Auslesen derselben
DE60324224D1 (de) Gerät und Verfahren zur Bestimmung der Blickpunktverschiebung in einem virtuellen Raum
ATA6732000A (de) Verfahren und einrichtung zur aufnahme von messdaten in einem hüttenwerk
DE60321612D1 (de) Verfahren und Vorrichtung zur Dateninversion in einem Speicher
DE60118125D1 (de) Verfahren und Vorrichtung zur Speicherung von vorausgeladenen Daten in einem Audiospeicher
DE60326141D1 (de) Verfahren und vorrichtung zur zellenverkapselung
DE60133974D1 (de) Lagervorrichtung und Verfahren zur ihrer Herstellung
DE60040239D1 (de) Verfahren und vorrichtung zur bestimmung von mineralischen bestandteilen in blattförmigem material
DE69911364T8 (de) Verfahren und Vorrichtung zur Parallelredundanz bei Halbleiterspeichern
DE10194858T1 (de) Verfahren und Vorrichtung zur Bitstromdecodierung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition