DE60116778D1 - Quantenkaskadenlaser mit anregung durch optische phononen - Google Patents

Quantenkaskadenlaser mit anregung durch optische phononen

Info

Publication number
DE60116778D1
DE60116778D1 DE60116778T DE60116778T DE60116778D1 DE 60116778 D1 DE60116778 D1 DE 60116778D1 DE 60116778 T DE60116778 T DE 60116778T DE 60116778 T DE60116778 T DE 60116778T DE 60116778 D1 DE60116778 D1 DE 60116778D1
Authority
DE
Germany
Prior art keywords
excitement
quantum cascade
cascade laser
optical phonons
phonons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60116778T
Other languages
English (en)
Other versions
DE60116778T2 (de
DE60116778T8 (de
Inventor
Jomegarrhome Faist
Mattias Beck
Antoine Muller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alpes Lasers SA
Original Assignee
Alpes Lasers SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alpes Lasers SA filed Critical Alpes Lasers SA
Publication of DE60116778D1 publication Critical patent/DE60116778D1/de
Publication of DE60116778T2 publication Critical patent/DE60116778T2/de
Application granted granted Critical
Publication of DE60116778T8 publication Critical patent/DE60116778T8/de
Active legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE60116778T 2000-09-13 2001-09-10 Quantenkaskadenlaser mit anregung durch optische phononen Active DE60116778T8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP00810823 2000-09-13
EP00810823A EP1189317A1 (de) 2000-09-13 2000-09-13 Quantenkaskadenlaser mit Anregung durch optische Phononen
PCT/CH2001/000543 WO2002023686A1 (fr) 2000-09-13 2001-09-10 Laser a cascades quantiques a excitation par des phonons optiques

Publications (3)

Publication Number Publication Date
DE60116778D1 true DE60116778D1 (de) 2006-04-06
DE60116778T2 DE60116778T2 (de) 2006-11-02
DE60116778T8 DE60116778T8 (de) 2007-03-29

Family

ID=8174904

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60116778T Active DE60116778T8 (de) 2000-09-13 2001-09-10 Quantenkaskadenlaser mit anregung durch optische phononen

Country Status (5)

Country Link
US (1) US6751244B2 (de)
EP (2) EP1189317A1 (de)
JP (1) JP4790202B2 (de)
DE (1) DE60116778T8 (de)
WO (1) WO2002023686A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1195865A1 (de) * 2000-08-31 2002-04-10 Alpes Lasers SA Quantenkaskadierter Laser
CN100373723C (zh) * 2005-08-31 2008-03-05 中国科学院上海微系统与信息技术研究所 磷化铟基量子级联激光器原子层尺度外延材料质量控制方法
CN100391069C (zh) * 2005-12-14 2008-05-28 中国科学院半导体研究所 单模f-p腔量子级联激光器的器件结构
JP2008060396A (ja) * 2006-08-31 2008-03-13 Hamamatsu Photonics Kk 量子カスケードレーザ
US7609738B2 (en) * 2006-10-30 2009-10-27 Maxion Technologies, Inc. Multiple phonon resonance quantum cascade lasers
JP5641667B2 (ja) * 2007-01-18 2014-12-17 浜松ホトニクス株式会社 量子カスケードレーザ
JP2010521815A (ja) * 2007-03-16 2010-06-24 プレジデント アンド フェローズ オブ ハーバード カレッジ テラヘルツ放射の発生方法および装置
US20080273565A1 (en) * 2007-05-04 2008-11-06 Gmachl Claire F Excited state quantum cascade photon source
JP5248881B2 (ja) * 2008-02-28 2013-07-31 浜松ホトニクス株式会社 量子カスケードレーザ
WO2010011392A2 (en) * 2008-05-08 2010-01-28 Massachusetts Institute Of Technology (Mit) Lens coupled quantum cascade laser
JP5523759B2 (ja) 2009-07-31 2014-06-18 浜松ホトニクス株式会社 量子カスケードレーザ
JP2011035138A (ja) * 2009-07-31 2011-02-17 Hamamatsu Photonics Kk 半導体発光素子
US8121164B1 (en) 2009-12-22 2012-02-21 Pranalytica, Inc. Quantum cascade laser: bias-neutral design
JP2011243781A (ja) 2010-05-19 2011-12-01 Hamamatsu Photonics Kk 量子カスケードレーザ
US8779412B2 (en) * 2011-07-20 2014-07-15 Samsung Electronics Co., Ltd. Semiconductor light emitting device
JP5771120B2 (ja) 2011-10-28 2015-08-26 浜松ホトニクス株式会社 量子カスケードレーザの製造方法
JP5941655B2 (ja) 2011-10-28 2016-06-29 浜松ホトニクス株式会社 量子カスケードレーザ
US9608408B2 (en) 2012-09-26 2017-03-28 Pranalytica, Inc. Long wavelength quantum cascade lasers based on high strain composition
EP2849294B1 (de) 2013-09-13 2019-07-31 Alpes Lasers S.A. Abstimmbarer Laser
EP3227977B1 (de) * 2014-12-03 2021-06-02 Alpes Lasers S.A. Quantenkaskadenlaser mit stromsperrschichten
CN111375539B (zh) * 2018-12-30 2021-07-13 南京拓步智能科技有限公司 基于多通道相位差控制的声子激发方法与控制系统
CN118040477A (zh) * 2024-03-27 2024-05-14 睿创光子(无锡)技术有限公司 一种量子级联激光器及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02211686A (ja) * 1989-02-13 1990-08-22 Mitsubishi Electric Corp 半導体レーザ
US5457709A (en) * 1994-04-04 1995-10-10 At&T Ipm Corp. Unipolar semiconductor laser
US5509025A (en) * 1994-04-04 1996-04-16 At&T Corp. Unipolar semiconductor laser
JP3132433B2 (ja) * 1997-09-11 2001-02-05 日本電気株式会社 無秩序化結晶構造の製造方法、半導体レーザの製造方法及びウィンドウ構造半導体レーザの製造方法
US6023482A (en) * 1998-01-23 2000-02-08 Lucent Technologies Inc. Article comprising a strain-compensated QC laser
US6137817A (en) 1998-06-12 2000-10-24 Lucent Technologies Inc. Quantum cascade laser
FR2787246B1 (fr) 1998-12-09 2001-02-23 Alpes Lasers Laser de type semi-conducteur
FR2791477B1 (fr) 1999-03-25 2001-06-29 Alpes Lasers Laser semi-conducteur infrarouge

Also Published As

Publication number Publication date
JP2004521481A (ja) 2004-07-15
DE60116778T2 (de) 2006-11-02
EP1189317A1 (de) 2002-03-20
EP1317786A1 (de) 2003-06-11
WO2002023686A1 (fr) 2002-03-21
US20030174751A1 (en) 2003-09-18
JP4790202B2 (ja) 2011-10-12
DE60116778T8 (de) 2007-03-29
EP1317786B1 (de) 2006-01-18
US6751244B2 (en) 2004-06-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8381 Inventor (new situation)

Inventor name: FAIST, JEROME, ST.-BLAISE, CH

Inventor name: BECK, MATTIAS, BASEL, CH

Inventor name: MULLER, ANTOINE, NEUCHATEL, CH