DE60109478D1 - Flächeneffizientes verfahren zur programmierung von elektrischen schmelzsicherungen - Google Patents
Flächeneffizientes verfahren zur programmierung von elektrischen schmelzsicherungenInfo
- Publication number
- DE60109478D1 DE60109478D1 DE60109478T DE60109478T DE60109478D1 DE 60109478 D1 DE60109478 D1 DE 60109478D1 DE 60109478 T DE60109478 T DE 60109478T DE 60109478 T DE60109478 T DE 60109478T DE 60109478 D1 DE60109478 D1 DE 60109478D1
- Authority
- DE
- Germany
- Prior art keywords
- efficient method
- electric fuses
- programming electric
- programming
- fuses
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/691,953 US6426911B1 (en) | 2000-10-19 | 2000-10-19 | Area efficient method for programming electrical fuses |
US691953 | 2000-10-19 | ||
PCT/US2001/045044 WO2002033707A2 (en) | 2000-10-19 | 2001-10-19 | Area efficient method for programming electrical fuses |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60109478D1 true DE60109478D1 (de) | 2005-04-21 |
DE60109478T2 DE60109478T2 (de) | 2006-04-13 |
Family
ID=24778662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60109478T Expired - Fee Related DE60109478T2 (de) | 2000-10-19 | 2001-10-19 | Flächeneffizientes verfahren zur programmierung von elektrischen schmelzsicherungen |
Country Status (5)
Country | Link |
---|---|
US (1) | US6426911B1 (de) |
EP (1) | EP1328944B1 (de) |
KR (1) | KR100504297B1 (de) |
DE (1) | DE60109478T2 (de) |
WO (1) | WO2002033707A2 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002203901A (ja) * | 2000-12-27 | 2002-07-19 | Toshiba Microelectronics Corp | フューズ回路 |
JP2003007081A (ja) * | 2001-06-25 | 2003-01-10 | Mitsubishi Electric Corp | 半導体集積回路装置 |
US6798272B2 (en) * | 2002-07-02 | 2004-09-28 | Infineon Technologies North America Corp. | Shift register for sequential fuse latch operation |
US7071729B2 (en) * | 2002-11-18 | 2006-07-04 | Infineon Technologies Ag | Dual-purpose shift register |
DE10353782B4 (de) * | 2002-11-18 | 2015-02-05 | Qimonda Ag | Dualzweck-Schieberegister |
US6882202B2 (en) | 2003-01-21 | 2005-04-19 | Infineon Technologies Ag | Multiple trip point fuse latch device and method |
DE102004036545B3 (de) * | 2004-07-28 | 2006-03-16 | Infineon Technologies Ag | Integrierter Halbleiterspeicher mit redundanten Speicherzellen |
US6980478B1 (en) * | 2004-09-01 | 2005-12-27 | Micron Technology, Inc. | Zero-enabled fuse-set |
GB0419465D0 (en) * | 2004-09-02 | 2004-10-06 | Cavendish Kinetics Ltd | Method and apparatus for programming and reading codes |
KR100745403B1 (ko) * | 2005-08-25 | 2007-08-02 | 삼성전자주식회사 | 반도체 메모리 장치 및 그 셀프 테스트 방법 |
KR100660899B1 (ko) * | 2005-12-15 | 2006-12-26 | 삼성전자주식회사 | 누설 전류 패스를 제거할 수 있는 퓨즈 회로 |
DE102006019075B4 (de) * | 2006-04-25 | 2008-01-31 | Infineon Technologies Ag | Integrierte Schaltung zur Speicherung eines Datums |
US7425510B2 (en) * | 2006-08-17 | 2008-09-16 | Samsung Electronics Co., Ltd. | Methods of cleaning processing chamber in semiconductor device fabrication equipment |
KR100800383B1 (ko) * | 2006-08-18 | 2008-02-01 | 삼성전자주식회사 | 시프트 레지스터 및 시프트 레지스터에 전기적 퓨즈를적용하는 방법 |
DE102006042115B4 (de) * | 2006-09-07 | 2018-02-08 | Ams Ag | Schaltungsanordnung und Verfahren zum Betrieb einer Schaltungsanordnung |
DE102006063008B3 (de) * | 2006-09-07 | 2018-02-08 | Ams Ag | Schaltungsanordnung und Verfahren zum Betrieb einer Schaltungsanordnung |
US7684266B2 (en) * | 2007-04-11 | 2010-03-23 | Micron Technology, Inc. | Serial system for blowing antifuses |
CN102034550B (zh) * | 2009-09-27 | 2013-07-31 | 上海宏力半导体制造有限公司 | 电熔丝烧操作的方法和烧录装置 |
US10070850B2 (en) | 2012-10-19 | 2018-09-11 | Cook Medical Technologies Llc | Vascular closure with multiple connections |
US20200176072A1 (en) * | 2020-02-04 | 2020-06-04 | Intel Corporation | Dynamic random access memory built-in self-test power fail mitigation |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5313424A (en) * | 1992-03-17 | 1994-05-17 | International Business Machines Corporation | Module level electronic redundancy |
KR0130030B1 (ko) * | 1994-08-25 | 1998-10-01 | 김광호 | 반도체 메모리 장치의 컬럼 리던던시 회로 및 그 방법 |
KR970001564U (ko) * | 1995-06-21 | 1997-01-21 | 자동차용 후부차체의 보강구조 | |
JPH10162598A (ja) * | 1996-12-04 | 1998-06-19 | Toshiba Microelectron Corp | 半導体記憶装置 |
US5933376A (en) * | 1997-02-28 | 1999-08-03 | Lucent Technologies Inc. | Semiconductor memory device with electrically programmable redundancy |
US5859801A (en) | 1997-03-28 | 1999-01-12 | Siemens Aktiengesellschaft | Flexible fuse placement in redundant semiconductor memory |
US6205063B1 (en) * | 1998-08-26 | 2001-03-20 | International Business Machines Corporation | Apparatus and method for efficiently correcting defects in memory circuits |
US6008523A (en) | 1998-08-26 | 1999-12-28 | Siemens Aktiengesellschaft | Electrical fuses with tight pitches and method of fabrication in semiconductors |
-
2000
- 2000-10-19 US US09/691,953 patent/US6426911B1/en not_active Expired - Lifetime
-
2001
- 2001-10-19 KR KR10-2003-7005377A patent/KR100504297B1/ko active IP Right Grant
- 2001-10-19 WO PCT/US2001/045044 patent/WO2002033707A2/en active IP Right Grant
- 2001-10-19 DE DE60109478T patent/DE60109478T2/de not_active Expired - Fee Related
- 2001-10-19 EP EP01987937A patent/EP1328944B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR20030048439A (ko) | 2003-06-19 |
WO2002033707A2 (en) | 2002-04-25 |
EP1328944A2 (de) | 2003-07-23 |
US6426911B1 (en) | 2002-07-30 |
DE60109478T2 (de) | 2006-04-13 |
KR100504297B1 (ko) | 2005-07-27 |
WO2002033707A3 (en) | 2003-04-24 |
EP1328944B1 (de) | 2005-03-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |