DE601088C - Radiation-sensitive organ for radiation pyrometers - Google Patents
Radiation-sensitive organ for radiation pyrometersInfo
- Publication number
- DE601088C DE601088C DEA63049D DEA0063049D DE601088C DE 601088 C DE601088 C DE 601088C DE A63049 D DEA63049 D DE A63049D DE A0063049 D DEA0063049 D DE A0063049D DE 601088 C DE601088 C DE 601088C
- Authority
- DE
- Germany
- Prior art keywords
- radiation
- pyrometers
- sensitive organ
- crystal
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 title claims description 16
- 210000000056 organ Anatomy 0.000 title claims description 5
- 239000013078 crystal Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000002932 luster Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- -1 Selenium-German silver Chemical compound 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052949 galena Inorganic materials 0.000 description 2
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 2
- 239000010956 nickel silver Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
- G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/28—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using photoemissive or photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/479—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Strahlungsempfindliches Organ für Strahlungspyrometer Zur Messung der Wärmestrahlung und der Lichtstrahlung ist die Verwendung von Strahlungspyrometern üblich, bei denen als strahlungsempfindliches Organ Thermoelemente und lichtelektrische Zellen dienen. Es ist bekannt, als lichtelektrische Zellen Kombinationen vielkristalliner Halbleiter mit Metall zu verwenden und das Metall auf Flächen des vielkristallinen Halbleiters z. B. durch Verdampfen, Kathodenzerstäubung oder auf elektrolytischem Wege in so dünner Schicht aufzubringen, daß die zu messende Strahlenart noch durchsichtig ist. Eine wesentliche Erhöhung der Empfindlichkeit solcher Zellen wird nun dadurch erreicht, daß als kristalliner Halbleiter ein Einkristall verwendet wird. Hierin besteht die Erfindung. Außer der höheren Empfindlichkeit zeigen solche unter Verwendung von halbleitenden Einkristallen hergestellten Zellen eine geringe Trägheit und Freiheit von elektrischen Nachwirkungen gegenüber solchen mit vielkristallinen Halbleitern. Sie eignen sich daher im besonderen Maß zur Verwendung von Strahlungspyrometern.Radiation-sensitive organ for radiation pyrometers For measurement heat radiation and light radiation is the use of radiation pyrometers It is common to use thermocouples and photoelectric elements as a radiation-sensitive organ Cells serve. It is known to be multi-crystalline combinations as photoelectric cells Semiconductors with metal to use and the metal on faces of the polycrystalline Semiconductor z. B. by evaporation, sputtering or electrolytic To apply paths in such a thin layer that the type of radiation to be measured is still transparent is. A substantial increase in the sensitivity of such cells is now thereby achieves that a single crystal is used as the crystalline semiconductor. Here in the invention exists. In addition to the higher sensitivity, those show using cells made from semiconducting single crystals have little inertia and freedom of electrical aftereffects compared to those with multicrystalline semiconductors. They are therefore particularly suitable for the use of radiation pyrometers.
Ein Ausführungsbeispiel sei ausführlich beschrieben. Auf eine gut gewachsene Würfelfläche eines Bleiglanzkristalles wird beispielsweise eine' dünne, durchsichtige aber zusammenhängende Goldschicht in bekannter Weise im Hochvakuum aufgebracht. Das Gold wird z. B. -in einem Wolframschiffchen verdampft und der Dampf auf der Bleiglanzfläche niedergeschlagen. Die zunehmende Dicke der Goldschicht kann während des Vorganges auf einem zur Kontrolle dienenden Glasplättchen beobachtet werden. Der Kristall mit der Goldschicht wird in ein Gehäuse gebracht, das ebenso wie bei den bekannten Vielkristallkombinationen getrennte Zuleitungen an den Kristall und an die Goldschicht enthält. Der Kontakt des Kristalls mit seiner Zuleitung kann dadurch verbessert werden, daß der Kristall an einer passenden Stelle mit einem geeigneten Metall in dicker Schicht umgeben wird.An exemplary embodiment will be described in detail. On a good grown cube surface of a lead gloss crystal becomes, for example, a 'thin, transparent but cohesive gold layer in a known manner in a high vacuum upset. The gold is z. B. evaporated in a tungsten boat and the steam down on the galena surface. The increasing thickness of the gold layer can observed during the process on a glass slide serving as a control will. The crystal with the gold layer is placed in a case, which also as with the known multi-crystal combinations, separate leads to the crystal and to the gold layer. The contact of the crystal with its lead can can be improved by having the crystal in a suitable location with a suitable metal is surrounded in a thick layer.
Die zu messende Strahlung fällt, wie bei derartigen Zellen üblich, auf die Goldschicht auf, durchdringt diese und ruft zwischen Kristall und Gold einen elektrischen Strom hervor.The radiation to be measured falls, as is usual with such cells, on the gold layer, penetrates it and creates one between crystal and gold electric current.
Der durch die Verwendung halbleitender Einkristalle erzielte Fortschritt
wird durch folgende Zusammenstellung der Ergebnisse vergleichender Versuche besonders
deutlich gemacht. Bei diesen Versuchen wurden verschiedene als Organe für Strahlungspyrometer
vorgeschlagene
Kombinationen mit einer ioo-Watt-Wolframlampe bestrahlt und die hierbei entstehende
Belichtungsspannung V, der innere Widerstand W und die Stromstärke T in dem Kreis
Pyrometer-Galvanometer gemessen.
Die Beispiele 3 bis 5 zeigen, daß alle Kombinationen mit Halbleitervielkristallen infolge ihres größeren Widerstandes sehr viel geringere Stromstärken ergeben als der Bleiglanzeinkristall. Hingegen haben Kombinationen von Metallen und. Metallegierungen (Beispiel 6) infolge des geringen Widerstandes der Metalle Stromstärken von gleicher Größenordnung. Diese Metallkombinationen müssen aber mit außerordentlicher Sorgfalt hergestellt werden und sind im Betrieb besonders gegen mechanische Einflüsse sehr empfindlich.Examples 3 to 5 show that all combinations with semiconductor polycrystals, owing to their greater resistance, result in very much lower current intensities than the lead luster single crystal. However, combinations of metals and. Metal alloys (Example 6) due to the low resistance of the metals, currents of the same order of magnitude. However, these metal combinations must be produced with extraordinary care and are particularly sensitive to mechanical influences during operation.
An Stelle von Gold können auch andere Metalle, wie Kupfer, Silber, Nickel, Wolfram, Wismuth, Antimon, Tellur, und mit geringerer Empfindlichkeit z. B. Aluminium, Zink, Magnesium oder Thallium benutzt werden. An Stelle von Bleiglanz können andere Halbleitereinkristalle, wie Molybdänglanz- oder Silberglanzeinkristalle, treten und andere Kristallflächen als die Würfelfläche können zur Aufbringung des Metalles benutzt werden. Die Kombinationen mit Gold auf gut ausgebildeten Einkristallflächen bilden auch bei diesen Mineralien gute Beispiele.Instead of gold, other metals such as copper, silver, Nickel, tungsten, bismuth, antimony, tellurium, and with less sensitivity z. B. aluminum, zinc, magnesium or thallium can be used. Instead of galena can use other semiconductor single crystals, such as molybdenum or silver occur and crystal faces other than the cube face can be used to apply the Metal can be used. The combinations with gold on well-formed single crystal surfaces are good examples of these minerals as well.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEA63049D DE601088C (en) | 1931-08-14 | 1931-08-14 | Radiation-sensitive organ for radiation pyrometers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEA63049D DE601088C (en) | 1931-08-14 | 1931-08-14 | Radiation-sensitive organ for radiation pyrometers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE601088C true DE601088C (en) | 1934-08-07 |
Family
ID=6943082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEA63049D Expired DE601088C (en) | 1931-08-14 | 1931-08-14 | Radiation-sensitive organ for radiation pyrometers |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE601088C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE961366C (en) * | 1952-06-22 | 1957-04-04 | Licentia Gmbh | Support body for single crystal photoresistors |
| DE1200016B (en) * | 1961-07-13 | 1965-09-02 | Barnes Eng Co | Resistance bolometer with selective sensitivity |
-
1931
- 1931-08-14 DE DEA63049D patent/DE601088C/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE961366C (en) * | 1952-06-22 | 1957-04-04 | Licentia Gmbh | Support body for single crystal photoresistors |
| DE1200016B (en) * | 1961-07-13 | 1965-09-02 | Barnes Eng Co | Resistance bolometer with selective sensitivity |
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