DE60102343D1 - Intersubband Übergitter lichtemittierende Vorrichtung - Google Patents

Intersubband Übergitter lichtemittierende Vorrichtung

Info

Publication number
DE60102343D1
DE60102343D1 DE60102343T DE60102343T DE60102343D1 DE 60102343 D1 DE60102343 D1 DE 60102343D1 DE 60102343 T DE60102343 T DE 60102343T DE 60102343 T DE60102343 T DE 60102343T DE 60102343 D1 DE60102343 D1 DE 60102343D1
Authority
DE
Germany
Prior art keywords
intersubband
light emitting
emitting device
superlattice light
superlattice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60102343T
Other languages
English (en)
Other versions
DE60102343T2 (de
Inventor
Federico Capasso
Alfred Yi Cho
Sung-Nee George Chu
Claire F Gmachl
Albert Lee Hutchinson
Arthur Mike Sergent
Deborah Lee Sivco
Alessandro Tredicucci
Michael Clement Wanke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of DE60102343D1 publication Critical patent/DE60102343D1/de
Application granted granted Critical
Publication of DE60102343T2 publication Critical patent/DE60102343T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE60102343T 2000-11-08 2001-05-22 Intersubband Übergitter lichtemittierende Vorrichtung Expired - Lifetime DE60102343T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US708223 2000-11-08
US09/708,223 US6556604B1 (en) 2000-11-08 2000-11-08 Flat minibands with spatially symmetric wavefunctions in intersubband superlattice light emitters

Publications (2)

Publication Number Publication Date
DE60102343D1 true DE60102343D1 (de) 2004-04-22
DE60102343T2 DE60102343T2 (de) 2005-02-17

Family

ID=24844894

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60102343T Expired - Lifetime DE60102343T2 (de) 2000-11-08 2001-05-22 Intersubband Übergitter lichtemittierende Vorrichtung

Country Status (6)

Country Link
US (1) US6556604B1 (de)
EP (1) EP1215781B1 (de)
JP (1) JP5160708B2 (de)
CN (1) CN1279669C (de)
CA (1) CA2348005C (de)
DE (1) DE60102343T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6734453B2 (en) 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
US20020097471A1 (en) * 2001-01-22 2002-07-25 Bethea Clyde George Data transmission via direct modulation of a mid-IR laser
KR100818632B1 (ko) * 2005-07-26 2008-04-02 한국전자통신연구원 부밴드 천이 반도체 레이저
JP4954536B2 (ja) * 2005-11-29 2012-06-20 ローム株式会社 窒化物半導体発光素子
DE102006046228A1 (de) * 2006-07-27 2008-01-31 Osram Opto Semiconductors Gmbh Halbleiter-Schichtstruktur mit Übergitter
PL1883119T3 (pl) 2006-07-27 2016-04-29 Osram Opto Semiconductors Gmbh Półprzewodnikowa struktura warstwowa z supersiecią
EP1883140B1 (de) 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten
EP1883141B1 (de) 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
KR100842288B1 (ko) 2006-12-08 2008-06-30 한국전자통신연구원 인터밴드 터널링 부밴드 천이 반도체 레이저
JP5740865B2 (ja) * 2010-08-09 2015-07-01 住友電気工業株式会社 半導体発光素子
JP2012222296A (ja) * 2011-04-13 2012-11-12 Sumitomo Electric Ind Ltd 量子カスケード半導体レーザ
JP5810720B2 (ja) * 2011-08-01 2015-11-11 住友電気工業株式会社 量子カスケード半導体レーザ、レーザ装置および量子カスケード半導体レーザの製造方法
CN103107253B (zh) * 2013-02-04 2016-02-10 中国科学院物理研究所 一种发光二极管外延结构
US9088126B2 (en) 2013-10-17 2015-07-21 The Trustees Of Princeton University Single-mode quantum cascade lasers with enhanced tuning range
JP6259325B2 (ja) * 2014-03-12 2018-01-10 浜松ホトニクス株式会社 量子カスケードレーザ
JP6926541B2 (ja) * 2017-03-10 2021-08-25 住友電気工業株式会社 半導体レーザ
JP6926542B2 (ja) * 2017-03-10 2021-08-25 住友電気工業株式会社 半導体レーザ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174787A (ja) * 1989-12-04 1991-07-29 Hitachi Ltd 半導体レーザ素子
JPH08236854A (ja) * 1995-02-27 1996-09-13 Nippon Telegr & Teleph Corp <Ntt> ユニポーラ半導体レーザ
FR2740271B1 (fr) 1995-10-20 1997-11-07 Thomson Csf Laser a puits quantique
FR2760574B1 (fr) * 1997-03-04 1999-05-28 Thomson Csf Laser unipolaire multi-longueurs d'ondes
US6055254A (en) * 1998-09-23 2000-04-25 Lucent Technologies Inc. Quantum cascade light emitter with pre-biased internal electronic potential

Also Published As

Publication number Publication date
EP1215781A3 (de) 2002-07-10
CN1279669C (zh) 2006-10-11
DE60102343T2 (de) 2005-02-17
CN1352479A (zh) 2002-06-05
JP2002158404A (ja) 2002-05-31
JP5160708B2 (ja) 2013-03-13
EP1215781A2 (de) 2002-06-19
CA2348005A1 (en) 2002-05-08
CA2348005C (en) 2005-01-11
US6556604B1 (en) 2003-04-29
EP1215781B1 (de) 2004-03-17

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Legal Events

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