DE60045278D1 - Einstellbarer referenzgenerator - Google Patents

Einstellbarer referenzgenerator

Info

Publication number
DE60045278D1
DE60045278D1 DE60045278T DE60045278T DE60045278D1 DE 60045278 D1 DE60045278 D1 DE 60045278D1 DE 60045278 T DE60045278 T DE 60045278T DE 60045278 T DE60045278 T DE 60045278T DE 60045278 D1 DE60045278 D1 DE 60045278D1
Authority
DE
Germany
Prior art keywords
reference generator
adjustable reference
adjustable
generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60045278T
Other languages
English (en)
Inventor
Thomas J Davies
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60045278D1 publication Critical patent/DE60045278D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H03K4/02—Generating pulses having essentially a finite slope or stepped portions having stepped portions, e.g. staircase waveform
    • H03K4/023—Generating pulses having essentially a finite slope or stepped portions having stepped portions, e.g. staircase waveform by repetitive charge or discharge of a capacitor, analogue generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
DE60045278T 1999-09-30 2000-09-25 Einstellbarer referenzgenerator Expired - Lifetime DE60045278D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/408,789 US6448845B2 (en) 1999-09-30 1999-09-30 Trimmable reference generator
PCT/EP2000/009410 WO2001024191A1 (en) 1999-09-30 2000-09-25 Trimmable reference generator

Publications (1)

Publication Number Publication Date
DE60045278D1 true DE60045278D1 (de) 2011-01-05

Family

ID=23617776

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60045278T Expired - Lifetime DE60045278D1 (de) 1999-09-30 2000-09-25 Einstellbarer referenzgenerator

Country Status (5)

Country Link
US (1) US6448845B2 (de)
EP (1) EP1149383B1 (de)
JP (1) JP2003510756A (de)
DE (1) DE60045278D1 (de)
WO (1) WO2001024191A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6643787B1 (en) 1999-10-19 2003-11-04 Rambus Inc. Bus system optimization
US7031683B2 (en) * 2001-01-12 2006-04-18 Silicon Laboratories Inc. Apparatus and methods for calibrating signal-processing circuitry
US20030184314A1 (en) * 2002-03-26 2003-10-02 Ilan Barak Apparatus and method of providing output voltage
DE602004010226D1 (de) * 2004-02-20 2008-01-03 St Microelectronics Srl Leistungsverwaltungseinheit für einen Flashspeicher mit einer gemeinsamen Regulierung mehrerer Ladungspumpen
US7952937B2 (en) 2006-03-16 2011-05-31 Freescale Semiconductor, Inc. Wordline driver for a non-volatile memory device, a non-volatile memory device and method
US8077521B2 (en) 2006-03-16 2011-12-13 Freescale Semiconductor, Inc. Bitline current generator for a non-volatile memory array and a non-volatile memory array
WO2007104336A1 (en) * 2006-03-16 2007-09-20 Freescale Semiconductor, Inc. A non-volatile memory device and programmable voltage reference for a non-volatile memory device
CA2779296C (en) 2009-10-30 2018-02-13 Deka Products Limited Partnership Apparatus and method for detecting disconnection of an intravascular access device
US9999717B2 (en) 2011-05-24 2018-06-19 Deka Products Limited Partnership Systems and methods for detecting vascular access disconnection
US10345348B2 (en) * 2014-11-04 2019-07-09 Stmicroelectronics S.R.L. Detection circuit for an active discharge circuit of an X-capacitor, related active discharge circuit, integrated circuit and method
KR102515455B1 (ko) * 2016-02-26 2023-03-30 에스케이하이닉스 주식회사 내부 전압 생성 회로 및 이를 이용하는 시스템
US10438393B2 (en) * 2017-03-16 2019-10-08 Linden Research, Inc. Virtual reality presentation of body postures of avatars
US11145368B2 (en) * 2020-01-06 2021-10-12 Microchip Technology Incorporated Method and system for reliable and secure memory erase

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2437713A1 (de) * 1974-08-06 1976-02-26 Bosch Gmbh Robert Einrichtung zur verminderung von schaedlichen bestandteilen im abgas von brennkraftmaschinen
US4709225A (en) 1985-12-16 1987-11-24 Crystal Semiconductor Corporation Self-calibration method for capacitors in a monolithic integrated circuit
JPH0827662B2 (ja) * 1987-06-12 1996-03-21 沖電気工業株式会社 比較電圧発生回路及びそれを用いた電圧検出回路
US5315547A (en) * 1988-07-11 1994-05-24 Hitachi, Ltd. Nonvolatile semiconductor memory device with selective tow erasure
US5168174A (en) 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control
US5258760A (en) * 1992-07-13 1993-11-02 Allegro Microsystems, Inc. Digitally dual-programmable integrator circuit
US5319370A (en) 1992-08-31 1994-06-07 Crystal Semiconductor, Inc. Analog-to-digital converter with a continuously calibrated voltage reference
JPH0721790A (ja) 1993-07-05 1995-01-24 Mitsubishi Electric Corp 半導体集積回路
US5497119A (en) * 1994-06-01 1996-03-05 Intel Corporation High precision voltage regulation circuit for programming multilevel flash memory
US5627784A (en) * 1995-07-28 1997-05-06 Micron Quantum Devices, Inc. Memory system having non-volatile data storage structure for memory control parameters and method
US5793249A (en) 1996-09-30 1998-08-11 Advanced Micro Devices, Inc. System for providing tight program/erase speeds that are insensitive to process variations
IT1302432B1 (it) 1998-08-13 2000-09-05 Texas Instruments Italia Spa Sistema di azzeramento a blocchi a settori di dispositivi di memoriaa semicondutture flash

Also Published As

Publication number Publication date
WO2001024191A1 (en) 2001-04-05
EP1149383B1 (de) 2010-11-24
EP1149383A1 (de) 2001-10-31
JP2003510756A (ja) 2003-03-18
US20020000871A1 (en) 2002-01-03
US6448845B2 (en) 2002-09-10

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