DE60043373D1 - Verbundener Gegenstand mit verbesserter Gleichmässigkeit des Austrittspotentials und dessen Herstellungsverfahren - Google Patents

Verbundener Gegenstand mit verbesserter Gleichmässigkeit des Austrittspotentials und dessen Herstellungsverfahren

Info

Publication number
DE60043373D1
DE60043373D1 DE60043373T DE60043373T DE60043373D1 DE 60043373 D1 DE60043373 D1 DE 60043373D1 DE 60043373 T DE60043373 T DE 60043373T DE 60043373 T DE60043373 T DE 60043373T DE 60043373 D1 DE60043373 D1 DE 60043373D1
Authority
DE
Germany
Prior art keywords
manufacturing process
improved uniformity
bonded article
exit potential
exit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60043373T
Other languages
English (en)
Inventor
Victor Katsap
Waren K Waskiewicz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of DE60043373D1 publication Critical patent/DE60043373D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/15—Cathodes heated directly by an electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Solid Thermionic Cathode (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60043373T 1999-06-22 2000-06-13 Verbundener Gegenstand mit verbesserter Gleichmässigkeit des Austrittspotentials und dessen Herstellungsverfahren Expired - Lifetime DE60043373D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/337,741 US6448569B1 (en) 1999-06-22 1999-06-22 Bonded article having improved crystalline structure and work function uniformity and method for making the same

Publications (1)

Publication Number Publication Date
DE60043373D1 true DE60043373D1 (de) 2010-01-07

Family

ID=23321794

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60043373T Expired - Lifetime DE60043373D1 (de) 1999-06-22 2000-06-13 Verbundener Gegenstand mit verbesserter Gleichmässigkeit des Austrittspotentials und dessen Herstellungsverfahren

Country Status (6)

Country Link
US (1) US6448569B1 (de)
EP (1) EP1063670B1 (de)
JP (2) JP2001052594A (de)
KR (1) KR20010049594A (de)
DE (1) DE60043373D1 (de)
TW (1) TW432396B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9138913B2 (en) * 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
CN102822940B (zh) * 2010-04-02 2016-03-16 皇家飞利浦电子股份有限公司 具有包含铱丝的馈通的陶瓷金属卤化物灯
US20170309584A1 (en) * 2014-10-23 2017-10-26 Agency For Science, Technology And Research Method of bonding a first substrate and a second substrate
GB2583359A (en) * 2019-04-25 2020-10-28 Aquasium Tech Limited Electron beam emitting assembly

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB395439A (en) * 1932-02-17 1933-07-20 Mullard Radio Valve Co Ltd Improvements relating to thermionic valves
US2410822A (en) * 1942-01-03 1946-11-12 Sperry Gyroscope Co Inc High frequency electron discharge apparatus
US2892740A (en) * 1957-01-08 1959-06-30 Univ Notre Dame Du Lac Thermionic emitter and method of making same
US3284657A (en) * 1963-06-03 1966-11-08 Varian Associates Grain-oriented thermionic emitter for electron discharge devices
NL7003279A (de) * 1970-03-07 1971-09-09
US4055780A (en) * 1975-04-10 1977-10-25 National Institute For Researches In Inorganic Materials Thermionic emission cathode having a tip of a single crystal of lanthanum hexaboride
JPS5679828A (en) * 1979-12-05 1981-06-30 Toshiba Corp Electron gun
CH672860A5 (de) * 1986-09-29 1989-12-29 Balzers Hochvakuum
US5042058A (en) 1989-03-22 1991-08-20 University Of California Ultrashort time-resolved x-ray source
JP3397570B2 (ja) * 1996-04-02 2003-04-14 電気化学工業株式会社 熱電界放射陰極
US6130502A (en) * 1996-05-21 2000-10-10 Kabushiki Kaisha Toshiba Cathode assembly, electron gun assembly, electron tube, heater, and method of manufacturing cathode assembly and electron gun assembly
JPH1131469A (ja) * 1997-07-08 1999-02-02 Nikon Corp 電子銃

Also Published As

Publication number Publication date
EP1063670A2 (de) 2000-12-27
JP5392995B2 (ja) 2014-01-22
EP1063670B1 (de) 2009-11-25
EP1063670A3 (de) 2006-05-10
JP2001052594A (ja) 2001-02-23
US6448569B1 (en) 2002-09-10
TW432396B (en) 2001-05-01
JP2007250554A (ja) 2007-09-27
KR20010049594A (ko) 2001-06-15

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Legal Events

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8364 No opposition during term of opposition