DE60037944D1 - - Google Patents

Info

Publication number
DE60037944D1
DE60037944D1 DE60037944T DE60037944T DE60037944D1 DE 60037944 D1 DE60037944 D1 DE 60037944D1 DE 60037944 T DE60037944 T DE 60037944T DE 60037944 T DE60037944 T DE 60037944T DE 60037944 D1 DE60037944 D1 DE 60037944D1
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60037944T
Other versions
DE60037944T2 (de
Inventor
Kenichi Sasatani
Naritoschi Kimura
Masakazu Ohnishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Application granted granted Critical
Publication of DE60037944D1 publication Critical patent/DE60037944D1/de
Publication of DE60037944T2 publication Critical patent/DE60037944T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
DE60037944T 2000-12-28 2000-12-28 Kontinuierliches giessverfahren für silizium Expired - Lifetime DE60037944T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/009377 WO2002053496A1 (fr) 2000-12-28 2000-12-28 Procede de moulage en continu de silicium

Publications (2)

Publication Number Publication Date
DE60037944D1 true DE60037944D1 (de) 2008-03-20
DE60037944T2 DE60037944T2 (de) 2009-01-22

Family

ID=11736862

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60037944T Expired - Lifetime DE60037944T2 (de) 2000-12-28 2000-12-28 Kontinuierliches giessverfahren für silizium

Country Status (4)

Country Link
US (1) US6994835B2 (de)
EP (1) EP1254861B1 (de)
DE (1) DE60037944T2 (de)
WO (1) WO2002053496A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1786730A2 (de) * 2004-07-16 2007-05-23 Institutt For Energiteknikk Verfahren und reaktor zur kontinuierlichen herstellung von halbleitersilizium
JP2007019209A (ja) * 2005-07-07 2007-01-25 Sumco Solar Corp 太陽電池用多結晶シリコンおよびその製造方法
WO2007020706A1 (ja) * 2005-08-19 2007-02-22 Sumco Solar Corporation シリコン電磁鋳造装置およびその操作方法
JP2008156166A (ja) * 2006-12-25 2008-07-10 Sumco Solar Corp シリコンインゴットの鋳造方法および切断方法
JP5141020B2 (ja) * 2007-01-16 2013-02-13 株式会社Ｓｕｍｃｏ 多結晶シリコンの鋳造方法
JP5040521B2 (ja) * 2007-08-17 2012-10-03 株式会社Ｓｕｍｃｏ シリコン鋳造装置
US20090289390A1 (en) * 2008-05-23 2009-11-26 Rec Silicon, Inc. Direct silicon or reactive metal casting
US20100047148A1 (en) * 2008-05-23 2010-02-25 Rec Silicon, Inc. Skull reactor
JP5513389B2 (ja) * 2008-08-15 2014-06-04 株式会社アルバック シリコンの精製方法
WO2010071614A1 (en) 2008-12-15 2010-06-24 Pillar Jsc Process for producing multicrystalline silicon ingots by the induction method and apparatus for carrying out the same
US20100148403A1 (en) * 2008-12-16 2010-06-17 Bp Corporation North America Inc. Systems and Methods For Manufacturing Cast Silicon
FR2944520B1 (fr) * 2009-04-17 2011-05-20 Similelt Procede et installation pour la purification du silicium metallurgique.
KR101032265B1 (ko) 2009-05-07 2011-05-06 주식회사 케이씨씨 실리콘 연속 주조 장치 및 방법
DE102009021003A1 (de) * 2009-05-12 2010-11-18 Centrotherm Sitec Gmbh Verfahren und Vorrichtung zur Bereitstellung flüssigen Siliziums
UA95131C2 (uk) 2009-08-25 2011-07-11 Частное Акционерное Общество «Пиллар» Спосіб одержання зливків мультикристалічного кремнію індукційним методом
US8790584B2 (en) * 2009-11-06 2014-07-29 Korea Institute Of Industrial Technology System for refining UMG Si using steam plasma torch
TWI393805B (zh) 2009-11-16 2013-04-21 Masahiro Hoshino Purification method of metallurgical silicon
KR101581046B1 (ko) * 2009-12-16 2015-12-30 주식회사 케이씨씨 플라즈마 아크토치의 위치조절장치
WO2011099110A1 (ja) * 2010-02-09 2011-08-18 Kaneko Kyojiro シリコン真空溶解法
TWI397617B (zh) * 2010-02-12 2013-06-01 Masahiro Hoshino Metal silicon purification device
WO2011128292A1 (de) * 2010-04-13 2011-10-20 Schmid Silicon Technology Gmbh Herstellung von monokristallinen halbleiterwerkstoffen
DE102010015354A1 (de) 2010-04-13 2011-10-13 Schmid Silicon Technology Gmbh Herstellung eines kristallinen Halbleiterwerkstoffs
TWI403461B (zh) 2010-07-21 2013-08-01 Masahiro Hoshino Method and apparatus for improving yield and yield of metallurgical silicon
JP2012036059A (ja) * 2010-08-11 2012-02-23 Sumco Corp シリコンの電磁鋳造装置
RU2465202C2 (ru) * 2010-11-17 2012-10-27 Общество c ограниченной ответственностью "Энергия" Способ очистки металлургического кремния увлажненной плазмой переменного тока в вакууме
KR20120126913A (ko) * 2011-05-13 2012-11-21 주식회사 케이씨씨 실리콘 잉곳을 생산하는 전자기 연속 주조 장치
FR2979357B1 (fr) * 2011-08-31 2015-04-24 Commissariat Energie Atomique Systeme de fabrication d'un materiau cristallin par cristallisation dirigee muni d'une source de chaleur additionnelle laterale
JP5861770B2 (ja) * 2012-03-26 2016-02-16 株式会社Sumco 多結晶シリコンおよびその鋳造方法
US8997524B2 (en) * 2012-05-04 2015-04-07 Korea Institute Of Energy Research Apparatus for manufacturing polysilicon based electron-beam melting using dummy bar and method of manufacturing polysilicon using the same
EP2895812B1 (de) * 2012-09-18 2018-11-21 Retech Systems LLC System und verfahren zum schmelzen von rohmaterialien
JP6279963B2 (ja) * 2014-04-15 2018-02-14 株式会社神戸製鋼所 チタンまたはチタン合金からなるスラブの連続鋳造装置
WO2019186871A1 (ja) 2018-03-29 2019-10-03 株式会社クリスタルシステム 単結晶製造装置および単結晶製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3205352B2 (ja) * 1990-05-30 2001-09-04 川崎製鉄株式会社 シリコン精製方法及び装置
JP3000109B2 (ja) * 1990-09-20 2000-01-17 株式会社住友シチックス尼崎 高純度シリコン鋳塊の製造方法
JP3138003B2 (ja) * 1991-05-10 2001-02-26 川崎製鉄株式会社 シリコンの精製方法及びその装置
JP3005633B2 (ja) * 1991-05-16 2000-01-31 株式会社住友シチックス尼崎 太陽電池用多結晶シリコン鋳塊の製造方法
EP0796820B1 (de) * 1996-03-19 2000-07-19 Kawasaki Steel Corporation Verfahren und Vorrichtung zur Raffinierung von Silicium
JPH10101319A (ja) * 1996-09-24 1998-04-21 Sumitomo Sitix Corp シリコン鋳造方法
CA2232777C (en) * 1997-03-24 2001-05-15 Hiroyuki Baba Method for producing silicon for use in solar cells
JPH1149510A (ja) * 1997-07-31 1999-02-23 Daido Steel Co Ltd 金属Ｓｉの精製方法及びその装置

Also Published As

Publication number Publication date
DE60037944T2 (de) 2009-01-22
US6994835B2 (en) 2006-02-07
EP1254861A4 (de) 2006-06-21
WO2002053496A1 (fr) 2002-07-11
EP1254861A1 (de) 2002-11-06
US20030150374A1 (en) 2003-08-14
EP1254861B1 (de) 2008-01-30

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