DE60028816D1 - Herstellung von unipolaren Komponenten - Google Patents
Herstellung von unipolaren KomponentenInfo
- Publication number
- DE60028816D1 DE60028816D1 DE60028816T DE60028816T DE60028816D1 DE 60028816 D1 DE60028816 D1 DE 60028816D1 DE 60028816 T DE60028816 T DE 60028816T DE 60028816 T DE60028816 T DE 60028816T DE 60028816 D1 DE60028816 D1 DE 60028816D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- unipolar components
- unipolar
- components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9916291 | 1999-12-22 | ||
FR9916291A FR2803094B1 (fr) | 1999-12-22 | 1999-12-22 | Fabrication de composants unipolaires |
PCT/FR2000/003655 WO2001047028A1 (fr) | 1999-12-22 | 2000-12-21 | Fabrication de composants unipolaires |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60028816D1 true DE60028816D1 (de) | 2006-07-27 |
DE60028816T2 DE60028816T2 (de) | 2007-01-18 |
Family
ID=9553668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60028816T Expired - Fee Related DE60028816T2 (de) | 1999-12-22 | 2000-12-21 | Herstellung von unipolaren Komponenten |
Country Status (6)
Country | Link |
---|---|
US (2) | US6903413B2 (de) |
EP (1) | EP1240672B1 (de) |
JP (1) | JP2003535455A (de) |
DE (1) | DE60028816T2 (de) |
FR (1) | FR2803094B1 (de) |
WO (1) | WO2001047028A1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6351009B1 (en) * | 1999-03-01 | 2002-02-26 | Fairchild Semiconductor Corporation | MOS-gated device having a buried gate and process for forming same |
US20060157745A1 (en) * | 2005-01-18 | 2006-07-20 | Stmicroelectronics S.A. | Vertical unipolar component with a low leakage current |
JP5351519B2 (ja) * | 2005-12-27 | 2013-11-27 | パワー・インテグレーションズ・インコーポレーテッド | 高速回復整流器構造体の装置および方法 |
US8080848B2 (en) | 2006-05-11 | 2011-12-20 | Fairchild Semiconductor Corporation | High voltage semiconductor device with lateral series capacitive structure |
US20080296636A1 (en) * | 2007-05-31 | 2008-12-04 | Darwish Mohamed N | Devices and integrated circuits including lateral floating capacitively coupled structures |
JP2007311822A (ja) * | 2007-07-23 | 2007-11-29 | Toshiba Corp | ショットキーバリヤダイオード |
US8193565B2 (en) | 2008-04-18 | 2012-06-05 | Fairchild Semiconductor Corporation | Multi-level lateral floating coupled capacitor transistor structures |
US7943989B2 (en) * | 2008-12-31 | 2011-05-17 | Alpha And Omega Semiconductor Incorporated | Nano-tube MOSFET technology and devices |
US8624302B2 (en) * | 2010-02-05 | 2014-01-07 | Fairchild Semiconductor Corporation | Structure and method for post oxidation silicon trench bottom shaping |
US8704296B2 (en) | 2012-02-29 | 2014-04-22 | Fairchild Semiconductor Corporation | Trench junction field-effect transistor |
CN108063166A (zh) * | 2016-11-09 | 2018-05-22 | 朱江 | 一种沟槽结构肖特基半导体装置及其制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1558506A (en) * | 1976-08-09 | 1980-01-03 | Mullard Ltd | Semiconductor devices having a rectifying metalto-semicondductor junction |
JPS57181172A (en) * | 1981-04-30 | 1982-11-08 | Toshiba Corp | Schottky barrier diode and manufacture thereof |
CA2064146C (en) * | 1991-03-28 | 1997-08-12 | Hisashi Ariyoshi | Schottky barrier diode and a method of manufacturing thereof |
JP2809253B2 (ja) * | 1992-10-02 | 1998-10-08 | 富士電機株式会社 | 注入制御型ショットキーバリア整流素子 |
JP3272242B2 (ja) * | 1995-06-09 | 2002-04-08 | 三洋電機株式会社 | 半導体装置 |
US5895951A (en) * | 1996-04-05 | 1999-04-20 | Megamos Corporation | MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches |
DE19631872C2 (de) * | 1996-08-07 | 2003-04-17 | Daimler Chrysler Ag | Vertikales Halbleiterbauelement |
SE9704149D0 (sv) * | 1997-11-13 | 1997-11-13 | Abb Research Ltd | A semiconductor device of SiC and a transistor of SiC having an insulated gate |
DE19815907C1 (de) * | 1998-04-08 | 1999-05-27 | Siemens Ag | Durch Feldeffekt steuerbares Halbleiterbauelement |
WO2001088997A2 (en) * | 2000-05-13 | 2001-11-22 | Koninklijke Philips Electronics N.V. | Trench-gate semiconductor device and method of making the same |
US6656797B2 (en) * | 2001-12-31 | 2003-12-02 | General Semiconductor, Inc. | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation |
-
1999
- 1999-12-22 FR FR9916291A patent/FR2803094B1/fr not_active Expired - Fee Related
-
2000
- 2000-12-21 EP EP00993557A patent/EP1240672B1/de not_active Expired - Lifetime
- 2000-12-21 JP JP2001547664A patent/JP2003535455A/ja not_active Withdrawn
- 2000-12-21 DE DE60028816T patent/DE60028816T2/de not_active Expired - Fee Related
- 2000-12-21 US US10/168,040 patent/US6903413B2/en not_active Expired - Lifetime
- 2000-12-21 WO PCT/FR2000/003655 patent/WO2001047028A1/fr active IP Right Grant
-
2005
- 2005-04-27 US US11/115,791 patent/US7220644B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2803094A1 (fr) | 2001-06-29 |
US20050202636A1 (en) | 2005-09-15 |
US20030057442A1 (en) | 2003-03-27 |
FR2803094B1 (fr) | 2003-07-25 |
JP2003535455A (ja) | 2003-11-25 |
EP1240672B1 (de) | 2006-06-14 |
US7220644B2 (en) | 2007-05-22 |
DE60028816T2 (de) | 2007-01-18 |
US6903413B2 (en) | 2005-06-07 |
EP1240672A1 (de) | 2002-09-18 |
WO2001047028A1 (fr) | 2001-06-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |