DE60026358T2 - Auftragen von photolack bei gleichzeitiger kompensation der substratreflektivität - Google Patents

Auftragen von photolack bei gleichzeitiger kompensation der substratreflektivität Download PDF

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Publication number
DE60026358T2
DE60026358T2 DE60026358T DE60026358T DE60026358T2 DE 60026358 T2 DE60026358 T2 DE 60026358T2 DE 60026358 T DE60026358 T DE 60026358T DE 60026358 T DE60026358 T DE 60026358T DE 60026358 T2 DE60026358 T2 DE 60026358T2
Authority
DE
Germany
Prior art keywords
substrate
light
lighting
photoresist
illumination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60026358T
Other languages
German (de)
English (en)
Other versions
DE60026358D1 (de
Inventor
Daniel C.C/O Internationaal Octrooib Baker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE60026358D1 publication Critical patent/DE60026358D1/de
Publication of DE60026358T2 publication Critical patent/DE60026358T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Materials For Photolithography (AREA)
DE60026358T 1999-11-30 2000-11-28 Auftragen von photolack bei gleichzeitiger kompensation der substratreflektivität Expired - Lifetime DE60026358T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US452341 1999-11-30
US09/452,341 US6319735B1 (en) 1999-11-30 1999-11-30 Photoresist dispense method by compensation for substrate reflectivity
PCT/US2000/032396 WO2001040864A1 (en) 1999-11-30 2000-11-28 Photoresist dispense method by compensation for substrate reflectivity

Publications (2)

Publication Number Publication Date
DE60026358D1 DE60026358D1 (de) 2006-04-27
DE60026358T2 true DE60026358T2 (de) 2006-11-09

Family

ID=23796099

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60026358T Expired - Lifetime DE60026358T2 (de) 1999-11-30 2000-11-28 Auftragen von photolack bei gleichzeitiger kompensation der substratreflektivität

Country Status (5)

Country Link
US (2) US6319735B1 (enExample)
EP (1) EP1157307B1 (enExample)
JP (1) JP2003515943A (enExample)
DE (1) DE60026358T2 (enExample)
WO (1) WO2001040864A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6558964B2 (en) * 2000-12-27 2003-05-06 Lam Research Corporation Method and apparatus for monitoring a semiconductor wafer during a spin drying operation
JP2007258658A (ja) * 2006-02-24 2007-10-04 Tokyo Electron Ltd 塗布液の吐出検知方法及びその装置並びに塗布液の吐出検知用プログラム
JP2022552961A (ja) 2019-10-15 2022-12-21 東京エレクトロン株式会社 基板の１つ以上の特性を監視するためのシステム及び方法
US20210129166A1 (en) 2019-11-04 2021-05-06 Tokyo Electron Limited Systems and Methods for Spin Process Video Analysis During Substrate Processing
US11276157B2 (en) 2019-11-14 2022-03-15 Tokyo Electron Limited Systems and methods for automated video analysis detection techniques for substrate process
US11168978B2 (en) 2020-01-06 2021-11-09 Tokyo Electron Limited Hardware improvements and methods for the analysis of a spinning reflective substrates
JP7671558B2 (ja) 2020-03-10 2025-05-02 東京エレクトロン株式会社 トラックシステムに統合するための長波赤外線熱センサ
US11738363B2 (en) 2021-06-07 2023-08-29 Tokyo Electron Limited Bath systems and methods thereof
US12488452B2 (en) 2021-06-16 2025-12-02 Tokyo Electron Limited Wafer bath imaging

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3714525A (en) * 1970-03-02 1973-01-30 Gen Electric Field-effect transistors with self registered gate which acts as diffusion mask during formation
US3680529A (en) 1971-03-04 1972-08-01 Eastman Kodak Co System for selectively coating webs
SE432848B (sv) 1981-01-21 1984-04-16 Olle Werner Inganes Sett att belegga en plan yta av ett halvledande eller isolerande material med ett skikt av en polymer i ett monster med given form och anordning for genomforande av settet
US4591271A (en) 1983-03-21 1986-05-27 Byers Donald W Method and apparatus for coating detection and surface evaluation
US5270797A (en) * 1989-07-20 1993-12-14 Brooklyn College Foundation Method and apparatus for determining a material's characteristics by photoreflectance using improved computer control
US5229303A (en) * 1989-08-29 1993-07-20 At&T Bell Laboratories Device processing involving an optical interferometric thermometry using the change in refractive index to measure semiconductor wafer temperature
US5691115A (en) * 1992-06-10 1997-11-25 Hitachi, Ltd. Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices
KR950033689A (ko) * 1994-03-02 1995-12-26 오노 시게오 노광장치 및 이를 이용한 회로패턴 형성방법
US6059873A (en) * 1994-05-30 2000-05-09 Semiconductor Energy Laboratory Co., Ltd. Optical processing method with control of the illumination energy of laser light
JP3335011B2 (ja) * 1994-09-16 2002-10-15 富士通株式会社 マスク及びこれを用いる荷電粒子ビーム露光方法
JPH09190971A (ja) * 1995-10-10 1997-07-22 Deutsche Itt Ind Gmbh 半導体ウエハにおけるチップパタンの最適化方法
JP3578577B2 (ja) * 1997-01-28 2004-10-20 大日本スクリーン製造株式会社 処理液供給方法及びその装置
US6122042A (en) * 1997-02-07 2000-09-19 Wunderman; Irwin Devices and methods for optically identifying characteristics of material objects
US6278809B1 (en) * 1997-05-30 2001-08-21 Ion Optics, Inc. Fiber optic reflectance apparatus for in situ characterization of thin films
US6048785A (en) * 1997-06-16 2000-04-11 Advanced Micro Devices, Inc. Semiconductor fabrication method of combining a plurality of fields defined by a reticle image using segment stitching
JP4003273B2 (ja) 1998-01-19 2007-11-07 セイコーエプソン株式会社 パターン形成方法および基板製造装置
US6376013B1 (en) * 1999-10-06 2002-04-23 Advanced Micro Devices, Inc. Multiple nozzles for dispensing resist
US6248175B1 (en) * 1999-10-29 2001-06-19 Advanced Micro Devices, Inc. Nozzle arm movement for resist development

Also Published As

Publication number Publication date
WO2001040864A8 (en) 2001-07-05
EP1157307B1 (en) 2006-03-01
US6818064B2 (en) 2004-11-16
US6319735B1 (en) 2001-11-20
JP2003515943A (ja) 2003-05-07
EP1157307A1 (en) 2001-11-28
WO2001040864A1 (en) 2001-06-07
US20020029744A1 (en) 2002-03-14
DE60026358D1 (de) 2006-04-27

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL