DE60023482D1 - Verfahren und gerät zur erweiterung des dynamischen bereichs von zeitverzögerungs- und integrierten ccd-geräten - Google Patents

Verfahren und gerät zur erweiterung des dynamischen bereichs von zeitverzögerungs- und integrierten ccd-geräten

Info

Publication number
DE60023482D1
DE60023482D1 DE60023482T DE60023482T DE60023482D1 DE 60023482 D1 DE60023482 D1 DE 60023482D1 DE 60023482 T DE60023482 T DE 60023482T DE 60023482 T DE60023482 T DE 60023482T DE 60023482 D1 DE60023482 D1 DE 60023482D1
Authority
DE
Germany
Prior art keywords
extending
dynamic range
delayed time
ccd devices
integrated ccd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60023482T
Other languages
German (de)
English (en)
Inventor
Alan Levine
Joseph Mccaffrey
William Hughes
Kantilal Patel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sarnoff Corp
Original Assignee
Sarnoff Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sarnoff Corp filed Critical Sarnoff Corp
Application granted granted Critical
Publication of DE60023482D1 publication Critical patent/DE60023482D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1538—Time-delay and integration
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/711—Time delay and integration [TDI] registers; TDI shift registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
DE60023482T 1999-03-22 2000-03-21 Verfahren und gerät zur erweiterung des dynamischen bereichs von zeitverzögerungs- und integrierten ccd-geräten Expired - Lifetime DE60023482D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12567099P 1999-03-22 1999-03-22
US09/528,818 US6472653B1 (en) 1999-03-22 2000-03-20 Method and apparatus to extend dynamic range of time delay and integrate charge coupled devices
PCT/US2000/007523 WO2000057633A1 (en) 1999-03-22 2000-03-21 Method and apparatus to extend dynamic range of time delay and integrate charge coupled devices

Publications (1)

Publication Number Publication Date
DE60023482D1 true DE60023482D1 (de) 2005-12-01

Family

ID=26823811

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60023482T Expired - Lifetime DE60023482D1 (de) 1999-03-22 2000-03-21 Verfahren und gerät zur erweiterung des dynamischen bereichs von zeitverzögerungs- und integrierten ccd-geräten

Country Status (6)

Country Link
US (1) US6472653B1 (enExample)
EP (1) EP1171994B1 (enExample)
JP (1) JP4393715B2 (enExample)
AU (1) AU3907600A (enExample)
DE (1) DE60023482D1 (enExample)
WO (1) WO2000057633A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6909459B2 (en) 2002-08-21 2005-06-21 Alpha Innotech Corporation Method of and apparatus for extending signal ranges of digital images
WO2004066814A2 (en) * 2003-01-24 2004-08-12 Proteus Biomedical Inc. Method and system for remote hemodynamic monitoring
WO2005084327A2 (en) * 2004-03-02 2005-09-15 Sarnoff Corporation Spectroscopy imager methods and apparatus having extended dynamic range
US7378634B2 (en) * 2004-07-27 2008-05-27 Sarnoff Corporation Imaging methods and apparatus having extended dynamic range
US7259413B2 (en) * 2004-09-28 2007-08-21 Micron Technology, Inc. High dynamic range image sensor
FR2880732B1 (fr) * 2005-01-13 2007-04-06 St Microelectronics Sa Capteur d'images
FR2932635B1 (fr) * 2008-06-17 2011-03-18 Centre Nat Etd Spatiales Capteur d'image du type tdi a dynamique auto adaptee par point image
JP5302073B2 (ja) 2009-04-01 2013-10-02 浜松ホトニクス株式会社 固体撮像装置
JP5300577B2 (ja) * 2009-04-23 2013-09-25 三菱電機株式会社 Ｔｄｉ方式のイメージセンサ、及び該イメージセンサの駆動方法
US8964088B2 (en) 2011-09-28 2015-02-24 Semiconductor Components Industries, Llc Time-delay-and-integrate image sensors having variable intergration times
FR3047112B1 (fr) * 2016-01-22 2018-01-19 Teledyne E2V Semiconductors Sas Capteur d'image multilineaire a transfert de charges a reglage de temps d'integration
US10616516B2 (en) * 2016-09-30 2020-04-07 Planet Labs Inc. Systems and methods for implementing time delay integration imaging techniques in conjunction with distinct imaging regions on a monolithic charge-coupled device image sensor
EP3668084A1 (en) 2018-12-14 2020-06-17 IMEC vzw A method for controlling time delay and integration imaging and an imaging sensor for time delay and integration imaging

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953733A (en) * 1975-05-21 1976-04-27 Rca Corporation Method of operating imagers
US4627084A (en) 1979-11-15 1986-12-02 Trw Inc. Differentiation and integration utilizing charge-coupled devices
JPS6115475A (ja) * 1984-07-01 1986-01-23 Canon Inc 撮像素子及び撮像装置
FR2577340B1 (fr) 1985-02-12 1987-03-06 Thomson Csf Dispositif de lecture avec accumulation de charges de detecteurs photosensibles
JPS62126667A (ja) * 1985-11-27 1987-06-08 Mitsubishi Electric Corp 固体撮像素子
FR2653626A1 (fr) 1989-10-24 1991-04-26 Thomson Composants Militaires Capteur photosensible a temps d'integration programmable.
FR2656756B1 (fr) 1989-12-29 1994-01-07 Commissariat A Energie Atomique Dispositif pour prises de vues a circuits de balayage integres.
US5276520A (en) * 1991-06-07 1994-01-04 Eastman Kodak Company Enhancing exposure latitude of image sensors
EP0563846A1 (en) 1992-03-30 1993-10-06 Matsushita Electric Industrial Co., Ltd. Dynamic peaking aperture correction for use with a CCD camera
US6101294A (en) * 1997-06-02 2000-08-08 Sarnoff Corporation Extended dynamic imaging system and method

Also Published As

Publication number Publication date
AU3907600A (en) 2000-10-09
JP4393715B2 (ja) 2010-01-06
JP2003521837A (ja) 2003-07-15
WO2000057633A1 (en) 2000-09-28
US6472653B1 (en) 2002-10-29
EP1171994A4 (en) 2002-06-05
EP1171994A1 (en) 2002-01-16
EP1171994B1 (en) 2005-10-26

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Legal Events

Date Code Title Description
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