DE60015855D1 - Verfahren zum Betrieb einer optischen Halbleiter-Vorrichtung - Google Patents

Verfahren zum Betrieb einer optischen Halbleiter-Vorrichtung

Info

Publication number
DE60015855D1
DE60015855D1 DE60015855T DE60015855T DE60015855D1 DE 60015855 D1 DE60015855 D1 DE 60015855D1 DE 60015855 T DE60015855 T DE 60015855T DE 60015855 T DE60015855 T DE 60015855T DE 60015855 D1 DE60015855 D1 DE 60015855D1
Authority
DE
Germany
Prior art keywords
operating
optical device
semiconductor optical
semiconductor
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60015855T
Other languages
English (en)
Other versions
DE60015855T2 (de
Inventor
Yoshiaki Nakano
Byong-Jin Ma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Tokyo NUC
Original Assignee
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Tokyo NUC filed Critical University of Tokyo NUC
Publication of DE60015855D1 publication Critical patent/DE60015855D1/de
Application granted granted Critical
Publication of DE60015855T2 publication Critical patent/DE60015855T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
    • G02F2/004—Transferring the modulation of modulated light, i.e. transferring the information from one optical carrier of a first wavelength to a second optical carrier of a second wavelength, e.g. all-optical wavelength converter
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3511—Self-focusing or self-trapping of light; Light-induced birefringence; Induced optical Kerr-effect
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3515—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/205—Antiguided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/509—Wavelength converting amplifier, e.g. signal gating with a second beam using gain saturation

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
DE60015855T 1999-06-08 2000-06-07 Verfahren zum Betrieb einer optischen Halbleiter-Vorrichtung Expired - Lifetime DE60015855T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP16031199 1999-06-08
JP11160311A JP3038383B1 (ja) 1999-06-08 1999-06-08 光デバイス

Publications (2)

Publication Number Publication Date
DE60015855D1 true DE60015855D1 (de) 2004-12-23
DE60015855T2 DE60015855T2 (de) 2005-03-31

Family

ID=15712223

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60015855T Expired - Lifetime DE60015855T2 (de) 1999-06-08 2000-06-07 Verfahren zum Betrieb einer optischen Halbleiter-Vorrichtung

Country Status (5)

Country Link
US (1) US6374029B1 (de)
EP (1) EP1059554B1 (de)
JP (1) JP3038383B1 (de)
CA (1) CA2310957C (de)
DE (1) DE60015855T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7643759B2 (en) * 2005-01-12 2010-01-05 Sumitomo Electric Industries, Ltd. Signal-quality evaluation device, signal adjustment method, optical-signal evaluation system, and optical transmission system
JP4953852B2 (ja) * 2007-02-14 2012-06-13 株式会社東芝 光出力装置並びに磁気記憶媒体駆動装置およびヘッドスライダ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3234389C2 (de) * 1982-09-16 1995-03-09 Siemens Ag Halbleiter-Laserdiode
JPS6371826A (ja) * 1986-09-16 1988-04-01 Hitachi Ltd 光半導体装置
CA2101411C (en) * 1992-08-14 2003-06-10 Jean-Pierre Weber Tunable optical filter
JPH07312460A (ja) * 1994-05-16 1995-11-28 Canon Inc 光半導体素子
FR2779838B1 (fr) * 1998-06-15 2000-08-04 Alsthom Cge Alcatel Composant optique a semiconducteur et amplificateur et convertisseur de longueurs d'onde constitues par ce composant
JP3054707B1 (ja) * 1999-03-19 2000-06-19 東京大学長 光アイソレ―タ

Also Published As

Publication number Publication date
JP2000347230A (ja) 2000-12-15
EP1059554B1 (de) 2004-11-17
DE60015855T2 (de) 2005-03-31
CA2310957A1 (en) 2000-12-08
EP1059554A3 (de) 2002-08-28
JP3038383B1 (ja) 2000-05-08
US6374029B1 (en) 2002-04-16
CA2310957C (en) 2003-11-18
EP1059554A2 (de) 2000-12-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition